AAAAAA

   
Results: 1-9 |
Results: 9

Authors: Posselt, M Belko, V Chagarov, E
Citation: M. Posselt et al., Influence of polytypism on elementary processes of ion-beam-induced defectproduction in SiC, NUCL INST B, 180, 2001, pp. 17-22

Authors: Posselt, M Teichert, J Bischoff, L Hausmann, S
Citation: M. Posselt et al., Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation, NUCL INST B, 178, 2001, pp. 170-175

Authors: Posselt, M Bischoff, L Teichert, J
Citation: M. Posselt et al., Influence of dose rate and temperature on ion-beam-induced defect evolution in Si investigated by channeling implantation at different doses, APPL PHYS L, 79(10), 2001, pp. 1444-1446

Authors: Posselt, M
Citation: M. Posselt, Prediction of the morphology of the as-implanted damage in silicon using anovel combination of BCA and MD simulations, MAT SC S PR, 3(4), 2000, pp. 317-323

Authors: Posselt, M Schmidt, B Feudel, T Strecker, N
Citation: M. Posselt et al., Atomistic simulation of ion implantation and its application in Si technology, MAT SCI E B, 71, 2000, pp. 128-136

Authors: Kogler, R Yankov, RA Posselt, M Danilin, AB Skorupa, W
Citation: R. Kogler et al., Defects remaining in MeV-ion-implanted and annealed Si away from the peak of the nuclear energy deposition profile, NUCL INST B, 147(1-4), 1999, pp. 96-100

Authors: Sander, A Posselt, M Bohm, N Ruess, M Altwegg, M
Citation: A. Sander et al., Detection of Bartonella henselae DNA by two different PCR assays and determination of the genotypes of strains involved in histologically defined catscratch disease, J CLIN MICR, 37(4), 1999, pp. 993-997

Authors: Assmann, W Huber, H Karamian, SA Gruner, F Mieskes, HD Andersen, JU Posselt, M Schmidt, B
Citation: W. Assmann et al., Transverse cooling or heating of channeled ions by electron capture and loss, PHYS REV L, 83(9), 1999, pp. 1759-1762

Authors: Pilz, W Borany, JV Grotzschel, R Jiang, W Posselt, M Schmidt, B
Citation: W. Pilz et al., Dependence of the silicon detector response to heavy ions on the directionof incidence - Computer simulations versus experimental data, NUCL INST A, 419(1), 1998, pp. 137-145
Risultati: 1-9 |