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Results:
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Results: 5
Conservation of flatband conditions for DySi2 monolayers on n-type Si(111)
Authors:
Vandre, S Preinesberger, C Busse, W Dahne, M
Citation:
S. Vandre et al., Conservation of flatband conditions for DySi2 monolayers on n-type Si(111), APPL PHYS L, 78(14), 2001, pp. 2012-2014
Epitaxial growth and electronic structure of lanthanide silicides on n-type Si(111)
Authors:
Vandre, S Kalka, T Preinesberger, C Dahne-Prietsch, M
Citation:
S. Vandre et al., Epitaxial growth and electronic structure of lanthanide silicides on n-type Si(111), J VAC SCI B, 17(4), 1999, pp. 1682-1690
Flatband conditions observed for lanthanide-silicide monolayers on n-type Si(111)
Authors:
Vandre, S Kalka, T Preinesberger, C Dahne-Prietsch, M
Citation:
S. Vandre et al., Flatband conditions observed for lanthanide-silicide monolayers on n-type Si(111), PHYS REV L, 82(9), 1999, pp. 1927-1930
Flatband conditions observed for lanthanide-silicide monolayers on n-type Si(111) (vol 82, pg 1927, 1999)
Authors:
Vandre, S Kalka, T Preinesberger, C Dahne-Prietsch, M
Citation:
S. Vandre et al., Flatband conditions observed for lanthanide-silicide monolayers on n-type Si(111) (vol 82, pg 1927, 1999), PHYS REV L, 82(21), 1999, pp. 4370-4370
Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots
Authors:
Eisele, H Flebbe, O Kalka, T Preinesberger, C Heinrichsdorff, F Krost, A Bimberg, D Dahne-Prietsch, M
Citation:
H. Eisele et al., Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots, APPL PHYS L, 75(1), 1999, pp. 106-108
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