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Results: 1-10 |
Results: 10
Mechanism of the isotermic amorphous-to-crystalline phase transition in Ge: Sb : Te ternary alloys
Authors: Gonzalez-Hernandez, J Prokhorov, EF Vorobiev, YV Morales-Sanchez, E Mendoza-Galvan, A Kostylev, SA Gorobets, YI Zakharchenko, VN Zakharchenko, RV
Citation: J. Gonzalez-hernandez et al., Mechanism of the isotermic amorphous-to-crystalline phase transition in Ge: Sb : Te ternary alloys, J VAC SCI A, 19(4), 2001, pp. 1623-1629
Effect of backgating on the field distribution in planar thin-film GaAs structures
Authors: Gorev, NB Kodzhespirova, IF Kovalenko, YA Privalov, EN Prokhorov, EF
Citation: Nb. Gorev et al., Effect of backgating on the field distribution in planar thin-film GaAs structures, MICROELEC J, 32(12), 2001, pp. 979-982
Effect of the impact ionization of deep traps on the field distribution inplanar thin-film GaAs structures
Authors: Prokhorov, EF Gonzalez-Hernandez, J Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation: Ef. Prokhorov et al., Effect of the impact ionization of deep traps on the field distribution inplanar thin-film GaAs structures, J APPL PHYS, 89(1), 2001, pp. 327-331
Dielectric properties of SiO2 thin films prepared by the sol-gel technique
Authors: Garcia-Cerda, LA Perez-Roblez, JF Gonzalez-Hernandez, J Mendoza-Galvan, A Vorobiev, YV Prokhorov, EF
Citation: La. Garcia-cerda et al., Dielectric properties of SiO2 thin films prepared by the sol-gel technique, J VAC SCI B, 18(1), 2000, pp. 288-292
In vivo electrical characteristics of human skin, including at biological active points
Authors: Prokhorov, EF Gonzalez-Hernandez, J Vorobiev, YV Morales-Sanchez, E Prokhorova, TE de Larrea, GZL
Citation: Ef. Prokhorov et al., In vivo electrical characteristics of human skin, including at biological active points, MED BIO E C, 38(5), 2000, pp. 507-511
Sidegating mechanism as a function of the sidegate-to-channel spacing
Authors: Prokhorov, EF Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation: Ef. Prokhorov et al., Sidegating mechanism as a function of the sidegate-to-channel spacing, SOL ST ELEC, 44(10), 2000, pp. 1857-1860
Nonmonotony of the extrinsic photoconductivity of n-type GaAs thin-film structures under backgating
Authors: Prokhorov, EF Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation: Ef. Prokhorov et al., Nonmonotony of the extrinsic photoconductivity of n-type GaAs thin-film structures under backgating, MICROELEC J, 31(4), 2000, pp. 267-269
The mechanism of the amorphous-to-crystalline transition in Ge2Sb2Te5 ternary alloys
Authors: Gonzalez-Hernandez, J Castano, V del Real, A Morales-Sanchez, E Garcia-Garcia, E Mendoza-Galvan, A Prokhorov, EF Vorobiev, YV
Citation: J. Gonzalez-hernandez et al., The mechanism of the amorphous-to-crystalline transition in Ge2Sb2Te5 ternary alloys, INORG MATER, 36(12), 2000, pp. 1219-1227
Low-frequency capacitance-voltage characterization of deep levels in film buffer layer substrate GaAs structures
Authors: Kostylev, SA Prokhorov, EF Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation: Sa. Kostylev et al., Low-frequency capacitance-voltage characterization of deep levels in film buffer layer substrate GaAs structures, SOL ST ELEC, 43(1), 1999, pp. 169-176
Capacitance-voltage characteristics of selectively doped AlxGa1-xAs/GaAs heterostructures containing deep traps
Authors: Prokhorov, EF Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation: Ef. Prokhorov et al., Capacitance-voltage characteristics of selectively doped AlxGa1-xAs/GaAs heterostructures containing deep traps, J APPL PHYS, 86(1), 1999, pp. 532-536
Risultati: 1-10 |