Authors: Rodwell, MJW Urteaga, M Mathew, T Scott, D Mensa, D Lee, Q Guthrie, J Betser, Y Martin, SC Smith, RP Jaganathan, S Krishnan, S Long, SI Pullela, R Agarwal, B Bhattacharya, U Samoska, L Dahlstrom, M

Citation: Mjw. Rodwell et al., Submicron scaling of HBTs, IEEE DEVICE, 48(11), 2001, pp. 2606-2624

Authors: Kopf, RF Hamm, RA Wang, YC Ryan, RW Tate, A Melendes, MA Pullela, R Chen, YK Thevin, J

Citation: Rf. Kopf et al., Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications, J ELEC MAT, 29(2), 2000, pp. 222-224

Authors: Baeyens, Y Pullela, R Mattia, JP Tsai, HS Chen, YK

Citation: Y. Baeyens et al., A 74-GHz bandwidth InAlAs/InGaAs-InP HBT distributed amplifier with 13-dB gain, IEEE MICR G, 9(11), 1999, pp. 461-463

Authors: Rodwell, M Lee, Q Mensa, D Guthrie, J Martin, SC Smith, RP Pullela, R Agarwal, B Jaganathan, S Mathew, T Long, S Long, S Long, S

Citation: M. Rodwell et al., Transferred-substrate HBT integrated circuits, SOL ST ELEC, 43(8), 1999, pp. 1489-1495

Authors: Mensa, D Pullela, R Lee, Q Guthrie, J Martin, SC Smith, RP Jaganathan, S Mathew, T Agarwal, B Long, SI Rodwell, M

Citation: D. Mensa et al., 48-GHz digital IC's and 85-GHz baseband amplifiers using transferred-substrate HBT's, IEEE J SOLI, 34(9), 1999, pp. 1196-1203

Authors: Agarwal, B Lee, Q Mensa, D Pullela, R Guthrie, J Rodwell, MJW

Citation: B. Agarwal et al., 80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors, IEEE MICR T, 46(12), 1998, pp. 2302-2307