Citation: S. Qin et al., HYDROGEN ETCHING FOR SEMICONDUCTOR-MATERIALS IN PLASMA DOPING EXPERIMENTS, Journal of electronic materials, 25(3), 1996, pp. 507-511
Citation: S. Qin et al., AN EQUIVALENT-CIRCUIT AND ITS EFFECTIVE IMPEDANCE OF A PLASMA LOAD DURING A HIGH-VOLTAGE PULSE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 114(3-4), 1996, pp. 288-292
Citation: S. Qin et al., HOLOGRAPHIC ASSESSMENT OF SURFACE CRACK DEPTHS IN RECTANGULAR BARS, Optics and lasers in engineering, 25(2-3), 1996, pp. 145-161
Citation: S. Qin et al., HOLOGRAPHIC EVALUATION OF EDGE DELAMINATION IN BARS BONDED TO A RIGIDSUPPORT WITH FOAM-ADHESIVE, Journal of engineering materials and technology, 118(3), 1996, pp. 330-334
Citation: S. Qin et al., PLASMA IMMERSION ION-IMPLANTATION MODEL INCLUDING MULTIPLE CHARGE-STATE, Journal of applied physics, 79(7), 1996, pp. 3432-3437
Citation: Jd. Bernstein et al., HIGH-DOSE-RATE HYDROGEN PASSIVATION OF POLYCRYSTALLINE SILICON CMOS TFTS BY PLASMA ION-IMPLANTATION, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1876-1882
Authors:
QIN S
BERNSTEIN JD
ZHAO ZF
LIU W
CHAN C
SHAO JQ
DENHOLM S
Citation: S. Qin et al., CHARGING EFFECTS IN PLASMA IMMERSION ION-IMPLANTATION FOR MICROELECTRONICS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 1994-1998
Citation: Jj. Gu et al., CONSTRICTION RESISTANCE OF MICROCONE-BASED CONTACTS, IEEE transactions on components, packaging, and manufacturing technology. Part A, 18(2), 1995, pp. 385-389
Citation: Dj. Bernstein et al., HYDROGENATION OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY PLASMA ION-IMPLANTATION, IEEE electron device letters, 16(10), 1995, pp. 421-423
Citation: Jq. Shao et al., DOSE-TIME RELATION IN BF3 PLASMA IMMERSION ION-IMPLANTATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(2), 1995, pp. 332-334
Authors:
QIN S
BERNSTEIN JD
ZHAO ZF
CHAN C
SHAO JQ
DENHOLM S
Citation: S. Qin et al., AN INVESTIGATION OF DOPANT GASES IN PLASMA IMMERSION ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 636-640
Citation: S. Qin et M. Gupta, THE MINIMUN VOLUME FRACTION OF SIC REINFORCEMENT REQUIRED FOR STRENGTH IMPROVEMENT OF AN AL-CU BASED COMPOSITE, Journal of Materials Science, 30(20), 1995, pp. 5223-5227
Citation: S. Qin et al., DYNAMIC SHEATH MODEL OF COLLISIONLESS MULTISPECIES PLASMA IMMERSION ION-IMPLANTATION, Journal of applied physics, 78(1), 1995, pp. 55-60
Authors:
ZHOU J
GRACE JR
LIM CJ
BRERETON CMH
QIN S
LIM KS
Citation: J. Zhou et al., PARTICLE CROSS-FLOW, LATERAL MOMENTUM FLUX AND LATERAL VELOCITY IN A CIRCULATING FLUIDIZED-BED, Canadian journal of chemical engineering, 73(5), 1995, pp. 612-619
Authors:
QIN S
NOWAK NJ
ZHANG J
SAIT SNJ
MAYERS PG
HIGGINS MJ
CHENG Y
LI L
MUNROE DJ
GERHARD DS
WEBER BH
BRIC E
HOUSMAN DE
EVANS GA
SHOWS TB
Citation: S. Qin et al., COMPLETE ASSEMBLY AND LOCALIZATION OF A CHROMOSOME-11 YAC LIBRARY, American journal of human genetics, 57(4), 1995, pp. 290-290
Authors:
PERLIN MW
DUGGAN DJ
DAVIS K
FARR JE
FINDLER RB
HIGGINS MJ
NOWAK NJ
EVANS GA
QIN S
ZHANG J
SHOWS TB
JAMES MR
RICHARD CW
Citation: Mw. Perlin et al., RAPID CONSTRUCTION OF INTEGRATED MAPS USING INNER-PRODUCT MAPPING - YAC COVERAGE OF HUMAN-CHROMOSOME-11, American journal of human genetics, 57(4), 1995, pp. 1553-1553
Authors:
ZHANG J
QIN S
NOWAK N
HIGGINS M
WEBER B
GERHARD D
VANHUL W
BACHINSKI L
SHOWS TB
Citation: J. Zhang et al., CONSTRUCTION OF YAC CONTIGS SPANNING 15 MEGABASES IN THE PERICENTROMERIC REGION OF CHROMOSOME-11, American journal of human genetics, 57(4), 1995, pp. 1591-1591
Citation: S. Qin et C. Chan, PLASMA IMMERSION ION-IMPLANTATION DOPING EXPERIMENTS FOR MICROELECTRONICS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 962-968
Citation: S. Qin et C. Chan, AN EVALUATION OF CONTAMINATION FROM PLASMA IMMERSION ION-IMPLANTATIONON SILICON DEVICE CHARACTERISTICS, Journal of electronic materials, 23(3), 1994, pp. 337-340
Authors:
ZHOU J
GRACE JR
QIN S
BRERETON CMH
LIM CJ
ZHU J
Citation: J. Zhou et al., VOIDAGE PROFILES IN A CIRCULATING FLUIDIZED-BED OF SQUARE CROSS-SECTION, Chemical Engineering Science, 49(19), 1994, pp. 3217-3226