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Results:
1-7
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Results: 7
Authors:
Ngai, T
Qi, WJ
Sharma, R
Fretwell, JL
Chen, X
Lee, JC
Banerjee, SK
Citation: T. Ngai et al., Transconductance improvement in surface-channel SiGe p-metal-oxide-siliconfield-effect transistors using a ZrO2 gate dielectric, APPL PHYS L, 78(20), 2001, pp. 3085-3087
Authors:
Kang, L
Lee, BH
Qi, WJ
Jeon, Y
Nieh, R
Gopalan, S
Onishi, K
Lee, JC
Citation: L. Kang et al., Electrical characteristics of highly reliable ultrathin hafnium oxide gatedielectric, IEEE ELEC D, 21(4), 2000, pp. 181-183
Authors:
Qi, WJ
Nieh, R
Lee, BH
Kang, LG
Jeon, Y
Lee, JC
Citation: Wj. Qi et al., Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application, APPL PHYS L, 77(20), 2000, pp. 3269-3271
Authors:
Qi, WJ
Nieh, R
Dharmarajan, E
Lee, BH
Jeon, Y
Kang, LG
Onishi, K
Lee, JC
Citation: Wj. Qi et al., Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application, APPL PHYS L, 77(11), 2000, pp. 1704-1706
Authors:
Ngai, T
Qi, WJ
Sharma, R
Fretwell, J
Chen, X
Lee, JC
Banerjee, S
Citation: T. Ngai et al., Electrical properties of ZrO2 gate dielectric on SiGe, APPL PHYS L, 76(4), 2000, pp. 502-504
Authors:
Lee, BH
Kang, LG
Nieh, R
Qi, WJ
Lee, JC
Citation: Bh. Lee et al., Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing, APPL PHYS L, 76(14), 2000, pp. 1926-1928
Authors:
Lee, BH
Jeon, Y
Zawadzki, K
Qi, WJ
Lee, J
Citation: Bh. Lee et al., Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon, APPL PHYS L, 74(21), 1999, pp. 3143-3145
Risultati:
1-7
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