Authors:
Duenas, S
Pelaez, R
Castan, E
Pinacho, R
Quintanilla, L
Barbolla, J
Martil, I
Redondo, E
Gonzalez-Diaz, G
Citation: S. Duenas et al., Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication, J MAT S-M E, 10(5-6), 1999, pp. 373-377
Authors:
Quintanilla, L
Duenas, S
Castan, E
Pinacho, R
Pelaez, R
Barbolla, J
Citation: L. Quintanilla et al., Electrical characterization of deep levels existing in fully implanted andrapid thermal annealed p(+)n InP junctions, J MAT S-M E, 10(5-6), 1999, pp. 413-418
Authors:
Quintanilla, L
Pinacho, R
Enriquez, L
Pelaez, R
Duenas, S
Castan, E
Bailon, L
Barbolla, J
Citation: L. Quintanilla et al., Electrical characterization of He-ion implantation-induced deep levels in p(+)n InP junctions, J APPL PHYS, 86(9), 1999, pp. 4855-4860
Authors:
Quintanilla, L
Pinacho, R
Enriquez, L
Pelaez, R
Duenas, S
Castan, E
Bailon, L
Barbolla, J
Citation: L. Quintanilla et al., Electrical characterization of a He ion implantation-induced induced deep level existing in p plus n InP junctions, J APPL PHYS, 85(11), 1999, pp. 7978-7980