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Results: 1-25 | 26-50 | 51-67 |
Results: 51-67/67
DETERMINATION OF THE STICKING COEFFICIENT OF DISILANE ON SI(001) USING THE 1ST REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATION PERIOD
Authors: WERNER K BUTZKE S RADELAAR S BALK P
Citation: K. Werner et al., DETERMINATION OF THE STICKING COEFFICIENT OF DISILANE ON SI(001) USING THE 1ST REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATION PERIOD, Journal of crystal growth, 136(1-4), 1994, pp. 322-327
EVIDENCE FOR NON-HYDROGEN DESORPTION LIMITED GROWTH OF SI FROM DISILANE AT VERY-LOW TEMPERATURES IN GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: WERNER K BUTZKE S RADELAAR S BALK P
Citation: K. Werner et al., EVIDENCE FOR NON-HYDROGEN DESORPTION LIMITED GROWTH OF SI FROM DISILANE AT VERY-LOW TEMPERATURES IN GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 136(1-4), 1994, pp. 338-343
INFLUENCE OF TEMPERATURE-GRADIENTS ON PARTIAL PRESSURES IN A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR
Authors: OOSTERLAKEN TGM LEUSINK GJ JANSSEN GCAM RADELAAR S KUIJLAARS KJ KLEIJN CR VANDENAKKER HEA
Citation: Tgm. Oosterlaken et al., INFLUENCE OF TEMPERATURE-GRADIENTS ON PARTIAL PRESSURES IN A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of applied physics, 76(5), 1994, pp. 3130-3139
DEFORMATION OF SI(100) WAFERS DURING RAPID THERMAL ANNEALING
Authors: JONGSTE JF OOSTERLAKEN TGM BART GCJ JANSSEN GCAM RADELAAR S
Citation: Jf. Jongste et al., DEFORMATION OF SI(100) WAFERS DURING RAPID THERMAL ANNEALING, Journal of applied physics, 75(6), 1994, pp. 2830-2836
HIGH-RESOLUTION REACTIVE ION ETCHING AND DAMAGE EFFECTS IN THE SI GEXSI1-X SYSTEM/
Authors: CHEUNG R ZIJLSTRA T VANDERDRIFT E GEERLIGS LJ VERBRUGGEN AH WERNER K RADELAAR S
Citation: R. Cheung et al., HIGH-RESOLUTION REACTIVE ION ETCHING AND DAMAGE EFFECTS IN THE SI GEXSI1-X SYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2224-2228
RESISTIVITY AND SUPERCONDUCTING TRANSITION-TEMPERATURE OF VERY THIN AMORPHOUS TUNGSTEN GERMANIUM FILMS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION
Authors: OOSTERLAKEN TGM LEUSINK GJ KUIPER GJ BAKKER SJM VERBRUGGEN AH JAEGER HM JANSSEN GCAM RADELAAR S
Citation: Tgm. Oosterlaken et al., RESISTIVITY AND SUPERCONDUCTING TRANSITION-TEMPERATURE OF VERY THIN AMORPHOUS TUNGSTEN GERMANIUM FILMS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION, Physica. C, Superconductivity, 214(3-4), 1993, pp. 359-364
STEP COVERAGE OF TUNGSTEN FILMS DEPOSITED BY GERMANE REDUCTION OF WF6
Authors: OOSTERLAKEN TGM LEUSINK GJ JANSSEN GCAM RADELAAR S
Citation: Tgm. Oosterlaken et al., STEP COVERAGE OF TUNGSTEN FILMS DEPOSITED BY GERMANE REDUCTION OF WF6, Applied surface science, 73, 1993, pp. 64-70
A FAST METHOD FOR THE SIMULATION OF XPS AND AES SPECTRA
Authors: ALKEMADE PFA WERNER K RADELAAR S SLOOF WG
Citation: Pfa. Alkemade et al., A FAST METHOD FOR THE SIMULATION OF XPS AND AES SPECTRA, Applied surface science, 70-1, 1993, pp. 24-28
DUAL-GATE NANOSTRUCTURED SILICON MOSFETS - FABRICATION AND LOW-TEMPERATURE CHARACTERIZATION
Authors: DEGRAAF C CARO J HEYERS K RADELAAR S
Citation: C. Degraaf et al., DUAL-GATE NANOSTRUCTURED SILICON MOSFETS - FABRICATION AND LOW-TEMPERATURE CHARACTERIZATION, Microelectronic engineering, 21(1-4), 1993, pp. 405-408
PATTERNING OF A TI PT/AU METALLIZATION FOR SUBMICRON BIPOLAR-TRANSISTORS MADE BY DIRECT WRITE E-BEAM LITHOGRAPHY/
Authors: WEBSTER MN VERBRUGGEN AH JOS HFF ROMIJN J MOORS PMA RADELAAR S
Citation: Mn. Webster et al., PATTERNING OF A TI PT/AU METALLIZATION FOR SUBMICRON BIPOLAR-TRANSISTORS MADE BY DIRECT WRITE E-BEAM LITHOGRAPHY/, Microelectronic engineering, 21(1-4), 1993, pp. 423-426
FABRICATION OF SI-COUPLED 3 TERMINAL SUPERCONDUCTING DEVICE USING SELECTIVE DEPOSITION OF BETA-W
Authors: BAKKER SJM ROUSSEEUW BAC VANDERDRIFT E KLAPWIJK TM RADELAAR S
Citation: Sjm. Bakker et al., FABRICATION OF SI-COUPLED 3 TERMINAL SUPERCONDUCTING DEVICE USING SELECTIVE DEPOSITION OF BETA-W, Microelectronic engineering, 21(1-4), 1993, pp. 435-438
SUPERCONDUCTIVITY AND LOCALIZATION IN THIN POLYCRYSTALLINE TUNGSTEN-GERMANIUM FILMS
Authors: BAKKER SJM JAEGER HM KLAPWIJK TM VANDERDRIFT E RADELAAR S
Citation: Sjm. Bakker et al., SUPERCONDUCTIVITY AND LOCALIZATION IN THIN POLYCRYSTALLINE TUNGSTEN-GERMANIUM FILMS, Physical review. B, Condensed matter, 48(6), 1993, pp. 4168-4171
STUDY OF GROWTH-KINETICS IN SILICON GAS-SOURCE MOLECULAR-BEAM EPITAXYWITH DISILANE USING RHEED INTENSITY OSCILLATIONS
Authors: BUTZKE S WERNER K TROMMEL J RADELAAR S BALK P
Citation: S. Butzke et al., STUDY OF GROWTH-KINETICS IN SILICON GAS-SOURCE MOLECULAR-BEAM EPITAXYWITH DISILANE USING RHEED INTENSITY OSCILLATIONS, Thin solid films, 228(1-2), 1993, pp. 27-31
CHEMICAL-VAPOR-DEPOSITION TUNGSTEN FILM GROWTH STUDIED BY INSITU GROWTH STRESS MEASUREMENTS
Authors: LEUSINK GJ OOSTERLAKEN TGM JANSSEN GCAM RADELAAR S
Citation: Gj. Leusink et al., CHEMICAL-VAPOR-DEPOSITION TUNGSTEN FILM GROWTH STUDIED BY INSITU GROWTH STRESS MEASUREMENTS, Thin solid films, 228(1-2), 1993, pp. 125-128
COMPARATIVE-STUDY OF MOLECULAR-BEAM INJECTION SYSTEMS FOR GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: SCHEINOWITZ DA TROMMEL J WERNER K RADELAAR S BALK P
Citation: Da. Scheinowitz et al., COMPARATIVE-STUDY OF MOLECULAR-BEAM INJECTION SYSTEMS FOR GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 986-989
KINETICS OF THE FORMATION OF C49 TISI2 FROM TI-SI MULTILAYERS AS OBSERVED BY IN-SITU STRESS MEASUREMENTS
Authors: JONGSTE JF ALKEMADE PFA JANSSEN GCAM RADELAAR S
Citation: Jf. Jongste et al., KINETICS OF THE FORMATION OF C49 TISI2 FROM TI-SI MULTILAYERS AS OBSERVED BY IN-SITU STRESS MEASUREMENTS, Journal of applied physics, 74(6), 1993, pp. 3869-3879
THE EVOLUTION OF GROWTH STRESSES IN CHEMICAL-VAPOR-DEPOSITED TUNGSTENFILMS STUDIED BY IN-SITU WAFER CURVATURE MEASUREMENTS
Authors: LEUSINK GJ OOSTERLAKEN TGM JANSSEN GCAM RADELAAR S
Citation: Gj. Leusink et al., THE EVOLUTION OF GROWTH STRESSES IN CHEMICAL-VAPOR-DEPOSITED TUNGSTENFILMS STUDIED BY IN-SITU WAFER CURVATURE MEASUREMENTS, Journal of applied physics, 74(6), 1993, pp. 3899-3910
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