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Results: 1-25 | 26-50 | 51-58
Results: 1-25/58
UNCOOLED HIGH-TEMPERATURE (130-DEGREES-C) OPERATION OF INGAAS-GAAS MULTIPLE-QUANTUM-WELL LASERS AT 20 GB S/
Authors: CZOTSCHER K LARKINS EC WEISSER S BENZ W DALEIDEN J FLEISSNER J MAIER M RALSTON JD ROSENZWEIG J
Citation: K. Czotscher et al., UNCOOLED HIGH-TEMPERATURE (130-DEGREES-C) OPERATION OF INGAAS-GAAS MULTIPLE-QUANTUM-WELL LASERS AT 20 GB S/, IEEE photonics technology letters, 9(5), 1997, pp. 575-577
LATERAL CARRIER PROFILE FOR MESA-STRUCTURED INGAAS GAAS LASERS/
Authors: TORRE MS ESQUIVIAS I ROMERO B CZOTSCHER K WEISSER S RALSTON JD LARKINS E BENZ W ROSENZWEIG J
Citation: Ms. Torre et al., LATERAL CARRIER PROFILE FOR MESA-STRUCTURED INGAAS GAAS LASERS/, Journal of applied physics, 81(9), 1997, pp. 6268-6271
55DB CNR OVER 50KM OF FIBER IN AN 80-CHANNEL EXTERNALLY-MODULATED AM-CATV SYSTEM WITHOUT OPTICAL AMPLIFICATION
Authors: PIEHLER D ZOU X KUO CY NILSSON A KLEEFELD J GARCIA G RALSTON JD MATHUR A
Citation: D. Piehler et al., 55DB CNR OVER 50KM OF FIBER IN AN 80-CHANNEL EXTERNALLY-MODULATED AM-CATV SYSTEM WITHOUT OPTICAL AMPLIFICATION, Electronics Letters, 33(3), 1997, pp. 226-227
HIGH-POWER FIBER-COUPLED 1550 NM DFB LASER MODULES FOR EXTERNALLY-MODULATED FIBEROPTIC TRANSMISSION
Authors: RALSTON JD LI GP MATHUR A ROGERS G LO T
Citation: Jd. Ralston et al., HIGH-POWER FIBER-COUPLED 1550 NM DFB LASER MODULES FOR EXTERNALLY-MODULATED FIBEROPTIC TRANSMISSION, Electronics Letters, 33(3), 1997, pp. 230-232
DAMPING-LIMITED MODULATION BANDWIDTHS UP TO 40 GHZ IN UNDOPED SHORT-CAVITY IN0.35GA0.65AS-GAAS MULTIPLE-QUANTUM-WELL LASERS
Authors: WEISSER S LARKINS EC CZOTSCHER K BENZ W DALEIDEN J ESQUIVIAS I FLEISSNER J RALSTON JD ROMERO B SAH RE SCHONFELDER A ROSENZWEIG J
Citation: S. Weisser et al., DAMPING-LIMITED MODULATION BANDWIDTHS UP TO 40 GHZ IN UNDOPED SHORT-CAVITY IN0.35GA0.65AS-GAAS MULTIPLE-QUANTUM-WELL LASERS, IEEE photonics technology letters, 8(5), 1996, pp. 608-610
CARRIER CAPTURE AND ESCAPE TIMES IN IN0.35GA0.65AS-GAAS MULTI-QUANTUM-WELL LASERS DETERMINED FROM HIGH-FREQUENCY ELECTRICAL-IMPEDANCE MEASUREMENTS
Authors: ESQUIVIAS I WEISSER S ROMERO B RALSTON JD
Citation: I. Esquivias et al., CARRIER CAPTURE AND ESCAPE TIMES IN IN0.35GA0.65AS-GAAS MULTI-QUANTUM-WELL LASERS DETERMINED FROM HIGH-FREQUENCY ELECTRICAL-IMPEDANCE MEASUREMENTS, IEEE photonics technology letters, 8(10), 1996, pp. 1294-1296
FABRICATION OF DRY-ETCHED MIRRORS IN GAAS-BASED AND INP-BASED LASERS USING CHEMICALLY ASSISTED ION-BEAM ETCHING AT LOW-TEMPERATURES
Authors: SAH RE RALSTON JD DALEIDEN J LARKINS EC WEISSER S FLEISSNER J BENZ W
Citation: Re. Sah et al., FABRICATION OF DRY-ETCHED MIRRORS IN GAAS-BASED AND INP-BASED LASERS USING CHEMICALLY ASSISTED ION-BEAM ETCHING AT LOW-TEMPERATURES, Journal of electronic materials, 25(9), 1996, pp. 1446-1450
INGAASP INP 1.55-MU-M LASERS WITH CHEMICALLY ASSISTED ION BEAM-ETCHEDFACETS/
Authors: DALEIDEN J EISELE K KELLER R VOLLRATH G FIEDLER F RALSTON JD
Citation: J. Daleiden et al., INGAASP INP 1.55-MU-M LASERS WITH CHEMICALLY ASSISTED ION BEAM-ETCHEDFACETS/, Optical and quantum electronics, 28(5), 1996, pp. 527-532
EFFECT OF INTERFACIAL BONDING ON THE STRUCTURAL AND VIBRATIONAL PROPERTIES OF INAS GASB SUPERLATTICES/
Authors: HERRES N FUCHS F SCHMITZ J PAVLOV KM WAGNER J RALSTON JD KOIDL P GADALETA C SCAMARCIO G
Citation: N. Herres et al., EFFECT OF INTERFACIAL BONDING ON THE STRUCTURAL AND VIBRATIONAL PROPERTIES OF INAS GASB SUPERLATTICES/, Physical review. B, Condensed matter, 53(23), 1996, pp. 15688-15705
INTERSUBBAND RAMAN-SCATTERING IN INAS ALSB QUANTUM-WELLS/
Authors: WAGNER J SCHMITZ J RICHARDS D RALSTON JD KOIDL P
Citation: J. Wagner et al., INTERSUBBAND RAMAN-SCATTERING IN INAS ALSB QUANTUM-WELLS/, Solid-state electronics, 40(1-8), 1996, pp. 281-285
OPTICAL GAIN AND SPONTANEOUS EMISSION IN INGAAS GAAS MULTIPLE-QUANTUM-WELL LASER-DIODES/
Authors: SCHONFELDER A RALSTON JD CZOTSCHER K WEISSER S ROSENZWEIG J LARKINS EC
Citation: A. Schonfelder et al., OPTICAL GAIN AND SPONTANEOUS EMISSION IN INGAAS GAAS MULTIPLE-QUANTUM-WELL LASER-DIODES/, Journal of applied physics, 80(1), 1996, pp. 582-584
INFLUENCE OF INTERDIFFUSION PROCESSES ON OPTICAL AND STRUCTURAL-PROPERTIES OF PSEUDOMORPHIC IN0.35GA0.65AS GAAS MULTIPLE-QUANTUM-WELL STRUCTURES/
Authors: BURKNER S BAEUMLER M WAGNER J LARKINS EC ROTHEMUND W RALSTON JD
Citation: S. Burkner et al., INFLUENCE OF INTERDIFFUSION PROCESSES ON OPTICAL AND STRUCTURAL-PROPERTIES OF PSEUDOMORPHIC IN0.35GA0.65AS GAAS MULTIPLE-QUANTUM-WELL STRUCTURES/, Journal of applied physics, 79(9), 1996, pp. 6818-6825
STRUCTURAL AND CARRIER DENSITY-DEPENDENCE OF CARRIER LIFETIME IN INGAAS GAAS MULTIPLE-QUANTUM-WELL LASERS/
Authors: CZOTSCHER K WEISSER S LARKINS EC FLEISSNER J RALSTON JD SCHONFELDER A ROSENZWEIG J ESQUIVIAS I
Citation: K. Czotscher et al., STRUCTURAL AND CARRIER DENSITY-DEPENDENCE OF CARRIER LIFETIME IN INGAAS GAAS MULTIPLE-QUANTUM-WELL LASERS/, Applied physics letters, 69(21), 1996, pp. 3158-3160
CARRIER PROFILE FOR IN0.35GA0.65AS GAAS MULTIQUANTUM-WELL LASERS FROMCAPACITANCE-VOLTAGE MEASUREMENTS/
Authors: ARIAS J ESQUIVIAS I RALSTON JD LARKINS EC WEISSER S ROSENZWEIG J SCHONFELDER A MAIER M
Citation: J. Arias et al., CARRIER PROFILE FOR IN0.35GA0.65AS GAAS MULTIQUANTUM-WELL LASERS FROMCAPACITANCE-VOLTAGE MEASUREMENTS/, Applied physics letters, 68(8), 1996, pp. 1138-1140
CHEMICAL-ANALYSIS OF A CL-2 BCL3/IBR3 CHEMICALLY ASSISTED ION-BEAM ETCHING PROCESS FOR GAAS AND INP LASER-MIRROR FABRICATION UNDER CRYO-PUMPED ULTRAHIGH-VACUUM CONDITIONS/
Authors: DALEIDEN J EISELE K SAH RE SCHMIDT KH RALSTON JD
Citation: J. Daleiden et al., CHEMICAL-ANALYSIS OF A CL-2 BCL3/IBR3 CHEMICALLY ASSISTED ION-BEAM ETCHING PROCESS FOR GAAS AND INP LASER-MIRROR FABRICATION UNDER CRYO-PUMPED ULTRAHIGH-VACUUM CONDITIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2022-2024
WAVELENGTH TUNING OF HIGH-SPEED INGAAS-GAAS-ALGAAS PSEUDOMORPHIC MQW LASERS VIA IMPURITY-FREE INTERDIFFUSION
Authors: BURKNER S RALSTON JD WEISSER S ROSENZWEIG J LARKINS EC SAH RE FLEISSNER J
Citation: S. Burkner et al., WAVELENGTH TUNING OF HIGH-SPEED INGAAS-GAAS-ALGAAS PSEUDOMORPHIC MQW LASERS VIA IMPURITY-FREE INTERDIFFUSION, IEEE photonics technology letters, 7(9), 1995, pp. 941-943
IMPROVED PERFORMANCE FROM PSEUDOMORPHIC INYGA1-YAS-GAAS MQW LASERS WITH LOW GROWTH TEMPERATURE ALXGA1-XAS SHORT-PERIOD SUPERLATTICE CLADDING
Authors: LARKINS EC BENZ W ESQUIVIAS I ROTHEMUND W BAEUMLER M WEISSER S SCHONFELDER A FLEISSNER J JANTZ W ROSENZWEIG J RALSTON JD
Citation: Ec. Larkins et al., IMPROVED PERFORMANCE FROM PSEUDOMORPHIC INYGA1-YAS-GAAS MQW LASERS WITH LOW GROWTH TEMPERATURE ALXGA1-XAS SHORT-PERIOD SUPERLATTICE CLADDING, IEEE photonics technology letters, 7(1), 1995, pp. 16-19
PROCESS PARAMETER DEPENDENCE OF IMPURITY-FREE INTERDIFFUSION IN GAAS ALXGA1-XAS AND INYGA1-YAS/GAAS MULTIPLE-QUANTUM WELLS/
Authors: BURKNER S MAIER M LARKINS EC ROTHEMUND W OREILLY EP RALSTON JD
Citation: S. Burkner et al., PROCESS PARAMETER DEPENDENCE OF IMPURITY-FREE INTERDIFFUSION IN GAAS ALXGA1-XAS AND INYGA1-YAS/GAAS MULTIPLE-QUANTUM WELLS/, Journal of electronic materials, 24(7), 1995, pp. 805-812
IMPURITY FREE SELECTIVE INTERDIFFUSION OF PSEUDOMORPHIC INYGA1-YAS GAAS MULTIPLE-QUANTUM-WELL LASER AND MODULATOR STRUCTURES/
Authors: BURKNER S LARKINS EC BAEUMLER M WAGNER J ROTHEMUND W FLEMIG G RALSTON JD
Citation: S. Burkner et al., IMPURITY FREE SELECTIVE INTERDIFFUSION OF PSEUDOMORPHIC INYGA1-YAS GAAS MULTIPLE-QUANTUM-WELL LASER AND MODULATOR STRUCTURES/, Materials science and technology, 11(8), 1995, pp. 840-843
INTERSUBBAND TRANSITIONS IN INAS ALSB QUANTUM-WELLS STUDIED BY RESONANT RAMAN-SCATTERING/
Authors: WAGNER J SCHMITZ J FUCHS F RALSTON JD KOIDL P RICHARDS D
Citation: J. Wagner et al., INTERSUBBAND TRANSITIONS IN INAS ALSB QUANTUM-WELLS STUDIED BY RESONANT RAMAN-SCATTERING/, Physical review. B, Condensed matter, 51(15), 1995, pp. 9786-9790
ROOM-TEMPERATURE, HIGH-DEPOSITION-RATE, PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON OXYNITRIDE THIN-FILMS PRODUCING LOW SURFACE DAMAGE ON LATTICE-MATCHED AND PSEUDOMORPHIC III-V QUANTUM-WELL STRUCTURES
Authors: SAH RE RALSTON JD EICHIN G DISCHLER B ROTHEMUND W WAGNER J LARKINS EC BAUMANN H
Citation: Re. Sah et al., ROOM-TEMPERATURE, HIGH-DEPOSITION-RATE, PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON OXYNITRIDE THIN-FILMS PRODUCING LOW SURFACE DAMAGE ON LATTICE-MATCHED AND PSEUDOMORPHIC III-V QUANTUM-WELL STRUCTURES, Thin solid films, 259(2), 1995, pp. 225-230
OPTICAL AND STRUCTURAL INVESTIGATIONS OF INTERMIXING REACTIONS AT THEINTERFACES OF INAS ALSB AND INAS/GASB QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: SCHMITZ J WAGNER J FUCHS F HERRES N KOIDL P RALSTON JD
Citation: J. Schmitz et al., OPTICAL AND STRUCTURAL INVESTIGATIONS OF INTERMIXING REACTIONS AT THEINTERFACES OF INAS ALSB AND INAS/GASB QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 150(1-4), 1995, pp. 858-862
TUNNELING ASSISTED THERMIONIC EMISSION IN DOUBLE-BARRIER QUANTUM-WELLSTRUCTURES
Authors: EHRET S SCHNEIDER H LARKINS EC RALSTON JD
Citation: S. Ehret et al., TUNNELING ASSISTED THERMIONIC EMISSION IN DOUBLE-BARRIER QUANTUM-WELLSTRUCTURES, Journal of applied physics, 77(6), 1995, pp. 2537-2543
TAPERED INGAAS GAAS MQW LASERS WITH CARBON MODULATION-DOPING AND REDUCED FILAMENTATION/
Authors: RALSTON JD LAUGHTON FR CHAZAN P LARKINS EC MAIER M RAHMAN MKA WHITE IH
Citation: Jd. Ralston et al., TAPERED INGAAS GAAS MQW LASERS WITH CARBON MODULATION-DOPING AND REDUCED FILAMENTATION/, Electronics Letters, 31(8), 1995, pp. 651-653
CHARACTERISTICS OF A 2-COMPONENT CHEMICALLY-ASSISTED ION-BEAM ETCHINGTECHNIQUE FOR DRY-ETCHING OF HIGH-SPEED MULTIPLE-QUANTUM-WELL LASER MIRRORS
Authors: SAH RE RALSTON JD WEISSER S EISELE K
Citation: Re. Sah et al., CHARACTERISTICS OF A 2-COMPONENT CHEMICALLY-ASSISTED ION-BEAM ETCHINGTECHNIQUE FOR DRY-ETCHING OF HIGH-SPEED MULTIPLE-QUANTUM-WELL LASER MIRRORS, Applied physics letters, 67(7), 1995, pp. 927-929
Risultati: 1-25 | 26-50 | 51-58