Authors:
RAMM P
BOLLMANN D
BRAUN R
BUCHNER R
CAOMINH U
ENGELHARDT M
ERRMANN G
GRASSL T
HIEBER K
HUBNER H
KAWALA G
KLEINER M
KLUMPP A
KUHN S
LANDESBERGER C
LEZEC H
MUTH M
PAMLER W
POPP R
RENNER E
RUHL G
SANGER A
SCHELER U
SCHERTEL A
SCHMIDT C
SCHWARZL S
WEBER J
WEBER W
Citation: P. Ramm et al., 3-DIMENSIONAL METALLIZATION FOR VERTICALLY INTEGRATED-CIRCUITS (INVITED LECTURE), Microelectronic engineering, 37-8(1-4), 1997, pp. 39-47
Citation: R. Leutenecker et al., TITANIUM MONOPHOSPHIDE (TIP) LAYERS AS POTENTIAL DIFFUSION-BARRIERS, Microelectronic engineering, 37-8(1-4), 1997, pp. 397-402
Citation: Mb. Kleiner et al., PERFORMANCE IMPROVEMENT OF THE MEMORY-HIERARCHY OF RISC-SYSTEMS BY APPLICATION OF 3-D TECHNOLOGY, IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging, 19(4), 1996, pp. 709-718
Citation: Sa. Kuhn et al., PERFORMANCE MODELING OF THE INTERCONNECT STRUCTURE OF A 3-DIMENSIONALINTEGRATED RISC PROCESSOR CACHE SYSTEM/, IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging, 19(4), 1996, pp. 719-727
Authors:
RUHL G
FROSCHLE B
RAMM P
INTEMANN A
PAMLER W
Citation: G. Ruhl et al., DEPOSITION OF TITANIUM NITRIDE TUNGSTEN LAYERS FOR APPLICATION IN VERTICALLY INTEGRATED-CIRCUITS TECHNOLOGY/, Applied surface science, 91(1-4), 1995, pp. 382-387
Authors:
LEUTENECKER R
FROSCHLE B
CAOMINH U
RAMM P
Citation: R. Leutenecker et al., TITANIUM NITRIDE FILMS FOR BARRIER APPLICATIONS PRODUCED BY RAPID THERMAL CVD AND SUBSEQUENT IN-SITU ANNEALING, Thin solid films, 270(1-2), 1995, pp. 621-626
Citation: P. Ramm, ADVANCED IMAGE-ANALYSIS SYSTEMS IN CELL, MOLECULAR AND NEUROBIOLOGY APPLICATIONS, Journal of neuroscience methods, 54(2), 1994, pp. 131-149