AAAAAA
Results:
1-16
|
Results: 16
Authors:
HUDAIT MK
MODAK P
HARDIKAR S
RAO KSRK
KRUPANIDHI SB
Citation: Mk. Hudait et al., COMPARATIVE-STUDIES OF SI-DOPED N-TYPE MOVPE GAAS ON GE AND GAAS SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 55(1-2), 1998, pp. 53-67
Authors:
BHATTACHARYYA S
RASTOGI A
BHAT SV
RAO KSRK
SUBRAMANYAM SV
KANJILAL D
Citation: S. Bhattacharyya et al., ELECTRON-SPIN-RESONANCE STUDY ON HIGH-ENERGY HEAVY-ION IRRADIATED CONDUCTING CARBON-FILMS, Solid state communications, 105(8), 1998, pp. 543-546
Authors:
VENKATARAGHAVAN R
RAO KSRK
BHAT HL
Citation: R. Venkataraghavan et al., THE EFFECT OF TEMPERATURE-GRADIENT AND AMPOULE VELOCITY ON THE COMPOSITION AND OTHER PROPERTIES OF BRIDGMAN-GROWN INDIUM-ANTIMONIDE, Journal of crystal growth, 186(3), 1998, pp. 322-328
Authors:
VENKATARAGHAVAN R
RAO KSRK
BHAT HL
PAL S
DUBEY GC
Citation: R. Venkataraghavan et al., LOW-THRESHOLD OVONIC SWITCHING IN A-SI-H INSB HETEROSTRUCTURES/, Solid state communications, 102(10), 1997, pp. 759-762
Authors:
VENKATARAGHAVAN R
RAO KSRK
HEGDE MS
BHAT HL
Citation: R. Venkataraghavan et al., INFLUENCE OF GROWTH-PARAMETERS ON THE SURFACE AND INTERFACE QUALITY OF LASER-DEPOSITED INSB CDTE HETEROSTRUCTURES/, Physica status solidi. a, Applied research, 163(1), 1997, pp. 93-100
Authors:
VENKATARAGHAVAN R
RAO KSRK
BHAT HL
Citation: R. Venkataraghavan et al., THE EFFECT OF GROWTH-PARAMETERS ON THE POSITION OF THE MELT-SOLID INTERFACE IN BRIDGMAN GROWTH OF INDIUM-ANTIMONIDE, Journal of physics. D, Applied physics, 30(17), 1997, pp. 61-63
Authors:
VENKATARAGHAVAN R
SATYALAKSHMI KM
RAO KSRK
SREEDHAR AK
HEGDE MS
BHAT HL
Citation: R. Venkataraghavan et al., PULSED-LASER DEPOSITION OF INDIUM-ANTIMONIDE, Bulletin of Materials Science, 19(1), 1996, pp. 123-129
Authors:
SAISUDHA MB
RAO KSRK
BHAT HL
RAMAKRISHNA J
Citation: Mb. Saisudha et al., THE FLUORESCENCE OF ND3-EMISSION CROSS-SECTION( IN LEAD BORATE AND BISMUTH BORATE GLASSES WITH LARGE STIMULATED), Journal of applied physics, 80(9), 1996, pp. 4845-4853
Authors:
BHATTACHARYYA S
RAO KSRK
SUBRAMANYAM SV
KANJILAL D
Citation: S. Bhattacharyya et al., PERSISTENT PHOTOCONDUCTIVITY ON ION-IRRADIATED CARBON-FILMS PREPARED BY PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION AND DETERMINATION OF TRAPS IN THE PSEUDO-GAP REGION, Applied physics letters, 68(15), 1996, pp. 2079-2081
Authors:
RAO KSRK
SREEDHAR AK
BHAT HL
SINGH RA
DUBEY GC
KUMAR V
Citation: Ksrk. Rao et al., FINE-STRUCTURE IN 1.4 EV LUMINESCENCE BAND FROM PLASMA-DEPOSITED AMORPHOUS-SILICON LAYERS ON SILICON SUBSTRATES, Applied physics letters, 68(11), 1996, pp. 1458-1460
Authors:
DUTTA PS
RAO KSRK
BHAT HL
KUMAR V
Citation: Ps. Dutta et al., PHOTOLUMINESCENCE STUDIES IN BULK GALLIUM ANTIMONIDE, Applied physics A: Materials science & processing, 61(2), 1995, pp. 149-152
Authors:
DUTTA PS
RAO KSRK
BHAT HL
NAIK KG
KUMAR V
Citation: Ps. Dutta et al., SURFACE-MORPHOLOGY, ELECTRICAL AND OPTICAL-PROPERTIES OF GALLIUM ANTIMONIDE LAYERS GROWN BY LIQUID-PHASE EPITAXY, Journal of crystal growth, 152(1-2), 1995, pp. 14-20
Authors:
DUTTA PS
RAO KSRK
BHAT HL
Citation: Ps. Dutta et al., EFFECT OF RUTHENIUM PASSIVATION ON THE OPTICAL AND ELECTRICAL-PROPERTIES OF GALLIUM ANTIMONIDE, Journal of applied physics, 77(9), 1995, pp. 4825-4827
Authors:
BALASUBRAMANIAN S
RAO KSRK
BALASUBRAMANIAN N
KUMAR V
Citation: S. Balasubramanian et al., EFFECT OF HYDROGENATION AND THERMAL ANNEALING ON THE PHOTOLUMINESCENCE OF P-INP, Journal of applied physics, 77(10), 1995, pp. 5398-5405
Authors:
GURUMURTHY S
RAO KSRK
SREEDHAR AK
BHAT HL
SUNDERSHESHU B
BAGAI RK
KUMAR V
Citation: S. Gurumurthy et al., INFLUENCE DEVIATION FROM STOICHIOMETRY ON THE PHOTOLUMINESCENCE IN CDTE DOPED WITH INDIUM, Bulletin of Materials Science, 17(6), 1994, pp. 1057-1064
Authors:
DUTTA PS
RAO KSRK
SANGUNNI KS
BHAT HL
KUMAR V
Citation: Ps. Dutta et al., DONOR-RELATED DEEP-LEVEL IN BULK GASB, Applied physics letters, 65(11), 1994, pp. 1412-1414
Risultati:
1-16
|