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Results: 1-9 |
Results: 9
SHORT-WAVELENGTH PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH HIGH-DOSES OF SI+, GE+, AND AR+ IONS
Authors: KACHURIN GA TYSCHENKO IE REBOHLE L SKORUPA W YANKOV RA FROEB H BOEHME T LEO K
Citation: Ga. Kachurin et al., SHORT-WAVELENGTH PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH HIGH-DOSES OF SI+, GE+, AND AR+ IONS, Semiconductors, 32(4), 1998, pp. 392-396
PREPARATION OF SIO2-FILMS WITH EMBEDDED SI NANOCRYSTALS BY REACTIVE RF MAGNETRON SPUTTERING
Authors: SEIFARTH H GROTZSCHEL R MARKWITZ A MATZ W NITZSCHE P REBOHLE L
Citation: H. Seifarth et al., PREPARATION OF SIO2-FILMS WITH EMBEDDED SI NANOCRYSTALS BY REACTIVE RF MAGNETRON SPUTTERING, Thin solid films, 330(2), 1998, pp. 202-205
STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGE-IMPLANTED AND SI-IMPLANTED SILICON DIOXIDE
Authors: REBOHLE L VONBORANY J GROTZSCHEL R MARKWITZ A SCHMIDT B TYSCHENKO IE SKORUPA W FROB H LEO K
Citation: L. Rebohle et al., STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGE-IMPLANTED AND SI-IMPLANTED SILICON DIOXIDE, Physica status solidi. a, Applied research, 165(1), 1998, pp. 31-35
ENHANCEMENT OF THE INTENSITY OF THE SHORT-WAVELENGTH VISIBLE PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON-DIOXIDE FILMS CAUSED BY HYDROSTATIC-PRESSURE DURING ANNEALING
Authors: TYSCHENKO IE REBOHLE L YANKOV RA SKORUPA W MISIUK A
Citation: Ie. Tyschenko et al., ENHANCEMENT OF THE INTENSITY OF THE SHORT-WAVELENGTH VISIBLE PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON-DIOXIDE FILMS CAUSED BY HYDROSTATIC-PRESSURE DURING ANNEALING, Applied physics letters, 73(10), 1998, pp. 1418-1420
PRODUCTION, OPERATION AND STATUS OF THE KSU CRYEBIS FACILITY
Authors: STOCKLI MP ALI RM COCKE CL COWHERD S FRY D GIBSON PE LAMPENSCHERF S MACK RA PARKS DC RAPHAELIAN MLA REBOHLE L RENARD N RICHARD P TIPPING TN WERNER T WERRICK J WINECKI S WU W
Citation: Mp. Stockli et al., PRODUCTION, OPERATION AND STATUS OF THE KSU CRYEBIS FACILITY, Physica scripta. T, T71, 1997, pp. 188-198
BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS()
Authors: REBOHLE L TYSCHENKO IE FROB H LEO K YANKOV RA VONBORANY J KACHURIN GA SKORUPA W
Citation: L. Rebohle et al., BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS(), Microelectronic engineering, 36(1-4), 1997, pp. 107-110
STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGERMANIUM-IMPLANTED AND SILICON-IMPLANTED SILICON-DIOXIDE LAYERS
Authors: REBOHLE L VONBORANY J YANKOV RA SKORUPA W TYSCHENKO IE FROB H LEO K
Citation: L. Rebohle et al., STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGERMANIUM-IMPLANTED AND SILICON-IMPLANTED SILICON-DIOXIDE LAYERS, Applied physics letters, 71(19), 1997, pp. 2809-2811
A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING()
Authors: SKORUPA W YANKOV RA REBOHLE L FROB H BOHME T LEO K TYSCHENKO IE KACHURIN GA
Citation: W. Skorupa et al., A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 106-109
K-BETA K-ALPHA INTENSITY RATIOS AND CHEMICAL EFFECTS OF SOME 3D ELEMENTS/
Authors: REBOHLE L LEHNERT U ZSCHORNACK G
Citation: L. Rebohle et al., K-BETA K-ALPHA INTENSITY RATIOS AND CHEMICAL EFFECTS OF SOME 3D ELEMENTS/, X-ray spectrometry, 25(6), 1996, pp. 295-300
Risultati: 1-9 |