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Results: 1-25 | 26-33
Results: 1-25/33
SEM STUDIES OF NONUNIFORMITIES AND DEFECT S IN GAN AND ALGAN EPITAXIAL-FILMS
Authors: GOVORKOV AV POLYAKOV AY SMIRNOV NB REDWING JM SKOWRONSKI M SHIN M
Citation: Av. Govorkov et al., SEM STUDIES OF NONUNIFORMITIES AND DEFECT S IN GAN AND ALGAN EPITAXIAL-FILMS, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 62(3), 1998, pp. 471-476
TRANSPORT-COEFFICIENTS OF ALGAN GAN HETEROSTRUCTURES/
Authors: AHOUJJA M MITCHEL WC ELHAMRI S NEWROCK RS MAST DB REDWING JM TISCHLER MA FLYNN JS
Citation: M. Ahoujja et al., TRANSPORT-COEFFICIENTS OF ALGAN GAN HETEROSTRUCTURES/, Journal of electronic materials, 27(4), 1998, pp. 210-214
AL0.15GA0.85N GAN HETEROSTRUCTURE - EFFECTIVE-MASS AND SCATTERING TIMES/
Authors: ELHAMRI S NEWROCK RS MAST DB AHOUJJA M MITCHEL WC REDWING JM TISCHLER MA FLYNN JS
Citation: S. Elhamri et al., AL0.15GA0.85N GAN HETEROSTRUCTURE - EFFECTIVE-MASS AND SCATTERING TIMES/, Physical review. B, Condensed matter, 57(3), 1998, pp. 1374-1377
DEEP TRAPS IN HIGH-RESISTIVITY ALGAN FILMS
Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV REDWING JM
Citation: Ay. Polyakov et al., DEEP TRAPS IN HIGH-RESISTIVITY ALGAN FILMS, Solid-state electronics, 42(5), 1998, pp. 831-838
PROPERTIES OF SI DONORS AND PERSISTENT PHOTOCONDUCTIVITY IN ALGAN
Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV MILVIDSKII MG REDWING JM SHIN M SKOWRONSKI M GREVE DW WILSON RG
Citation: Ay. Polyakov et al., PROPERTIES OF SI DONORS AND PERSISTENT PHOTOCONDUCTIVITY IN ALGAN, Solid-state electronics, 42(4), 1998, pp. 627-635
SCANNING ELECTRON-MICROSCOPE STUDIES OF ALGAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: POLYAKOV AY GOVORKOV AV SMIRNOV NB MILVIDSKII MG REDWING JM SHIN M SKOWRONSKI M GREVE DW
Citation: Ay. Polyakov et al., SCANNING ELECTRON-MICROSCOPE STUDIES OF ALGAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Solid-state electronics, 42(4), 1998, pp. 637-646
NI AND NI SILICIDE SCHOTTKY CONTACTS ON N-GAN
Authors: LIU QZ YU LS DENG F LAU SS REDWING JM
Citation: Qz. Liu et al., NI AND NI SILICIDE SCHOTTKY CONTACTS ON N-GAN, Journal of applied physics, 84(2), 1998, pp. 881-886
OPTICALLY PUMPED INGAN GAN DOUBLE-HETEROSTRUCTURE LASERS WITH CLEAVEDFACETS/
Authors: STOCKER D SCHUBERT EF BOUTROS KS FLYNN JS VAUDO RP PHANSE VM REDWING JM
Citation: D. Stocker et al., OPTICALLY PUMPED INGAN GAN DOUBLE-HETEROSTRUCTURE LASERS WITH CLEAVEDFACETS/, Electronics Letters, 34(4), 1998, pp. 373-375
NI AND TI SCHOTTKY BARRIERS ON N-ALGAN GROWN ON SIC SUBSTRATES
Authors: YU LS QIAO DJ XING QJ LAU SS BOUTROS KS REDWING JM
Citation: Ls. Yu et al., NI AND TI SCHOTTKY BARRIERS ON N-ALGAN GROWN ON SIC SUBSTRATES, Applied physics letters, 73(2), 1998, pp. 238-240
CRYSTALLOGRAPHIC WET CHEMICAL ETCHING OF GAN
Authors: STOCKER DA SCHUBERT EF REDWING JM
Citation: Da. Stocker et al., CRYSTALLOGRAPHIC WET CHEMICAL ETCHING OF GAN, Applied physics letters, 73(18), 1998, pp. 2654-2656
FACET ROUGHNESS ANALYSIS FOR INGAN GAN LASERS WITH CLEAVED FACETS/
Authors: STOCKER DA SCHUBERT EF GRIESHABER W BOUTROS KS REDWING JM
Citation: Da. Stocker et al., FACET ROUGHNESS ANALYSIS FOR INGAN GAN LASERS WITH CLEAVED FACETS/, Applied physics letters, 73(14), 1998, pp. 1925-1927
SCHOTTKY-BARRIER ENGINEERING IN III-V NITRIDES VIA THE PIEZOELECTRIC EFFECT
Authors: YU ET DANG XZ YU LS QIAO D ASBECK PM LAU SS SULLIVAN GJ BOUTROS KS REDWING JM
Citation: Et. Yu et al., SCHOTTKY-BARRIER ENGINEERING IN III-V NITRIDES VIA THE PIEZOELECTRIC EFFECT, Applied physics letters, 73(13), 1998, pp. 1880-1882
PERSISTENT PHOTOCONDUCTIVITY AND DEFECT LEVELS IN N-TYPE ALGAN GAN HETEROSTRUCTURES/
Authors: DANG XZ WANG CD YU ET BOUTROS KS REDWING JM
Citation: Xz. Dang et al., PERSISTENT PHOTOCONDUCTIVITY AND DEFECT LEVELS IN N-TYPE ALGAN GAN HETEROSTRUCTURES/, Applied physics letters, 72(21), 1998, pp. 2745-2747
GAN FILMS STUDIED BY NEAR-FIELD SCANNING OPTICAL MICROSCOPY, ATOMIC-FORCE MICROSCOPY AND HIGH-RESOLUTION X-RAY-DIFFRACTION
Authors: LIU JT ZHI D REDWING JM TISCHLER MA KUECH TF
Citation: Jt. Liu et al., GAN FILMS STUDIED BY NEAR-FIELD SCANNING OPTICAL MICROSCOPY, ATOMIC-FORCE MICROSCOPY AND HIGH-RESOLUTION X-RAY-DIFFRACTION, Journal of crystal growth, 170(1-4), 1997, pp. 357-361
INTERFACIAL REACTIONS BETWEEN NICKEL THIN-FILMS AND GAN
Authors: VENUGOPALAN HS MOHNEY SE LUTHER BP WOLTER SD REDWING JM
Citation: Hs. Venugopalan et al., INTERFACIAL REACTIONS BETWEEN NICKEL THIN-FILMS AND GAN, Journal of applied physics, 82(2), 1997, pp. 650-654
PHOTOLUMINESCENCE STUDIES OF ERBIUM-DOPED GAAS UNDER HYDROSTATIC-PRESSURE
Authors: CULP TD HOMMERICH U REDWING JM KUECH TF BRAY KL
Citation: Td. Culp et al., PHOTOLUMINESCENCE STUDIES OF ERBIUM-DOPED GAAS UNDER HYDROSTATIC-PRESSURE, Journal of applied physics, 82(1), 1997, pp. 368-374
ALGAN GAN HEMTS GROWN ON SIC SUBSTRATES
Authors: BINARI SC REDWING JM KELNER G KRUPPA W
Citation: Sc. Binari et al., ALGAN GAN HEMTS GROWN ON SIC SUBSTRATES, Electronics Letters, 33(3), 1997, pp. 242-243
GAN GROWTH BY METALLORGANIC VAPOR-PHASE EPITAXY - A COMPARISON OF MODELING AND EXPERIMENTAL MEASUREMENTS
Authors: SAFVI SA REDWING JM TISCHLER MA KUECH TF
Citation: Sa. Safvi et al., GAN GROWTH BY METALLORGANIC VAPOR-PHASE EPITAXY - A COMPARISON OF MODELING AND EXPERIMENTAL MEASUREMENTS, Journal of the Electrochemical Society, 144(5), 1997, pp. 1789-1796
OPTICAL-PROPERTIES OF SI-DOPED GAN
Authors: SCHUBERT EF GOEPFERT ID GRIESHABER W REDWING JM
Citation: Ef. Schubert et al., OPTICAL-PROPERTIES OF SI-DOPED GAN, Applied physics letters, 71(7), 1997, pp. 921-923
EVIDENCE OF COMPENSATING CENTERS AS ORIGIN OF YELLOW LUMINESCENCE IN GAN
Authors: SCHUBERT EF GOEPFERT ID REDWING JM
Citation: Ef. Schubert et al., EVIDENCE OF COMPENSATING CENTERS AS ORIGIN OF YELLOW LUMINESCENCE IN GAN, Applied physics letters, 71(22), 1997, pp. 3224-3226
THERMALLY STABLE PTSI SCHOTTKY CONTACT ON N-GAN
Authors: LIU QZ YU LS LAU SS REDWING JM PERKINS NR KUECH TF
Citation: Qz. Liu et al., THERMALLY STABLE PTSI SCHOTTKY CONTACT ON N-GAN, Applied physics letters, 70(10), 1997, pp. 1275-1277
STRAIN-INDUCED BAND-GAP MODULATION IN GAAS ALGAAS QUANTUM-WELL STRUCTURE USING THIN-FILM STRESSORS/
Authors: DENG F LIU QZ YU LS GUAN ZF LAU SS REDWING JM GEISZ J KUECH TF
Citation: F. Deng et al., STRAIN-INDUCED BAND-GAP MODULATION IN GAAS ALGAAS QUANTUM-WELL STRUCTURE USING THIN-FILM STRESSORS/, Journal of applied physics, 79(3), 1996, pp. 1763-1771
2-DIMENSIONAL ELECTRON-GAS PROPERTIES OF ALGAN GAN HETEROSTRUCTURES GROWN ON 6H-SIC AND SAPPHIRE SUBSTRATES/
Authors: REDWING JM TISCHLER MA FLYNN JS ELHAMRI S AHOUJJA M NEWROCK RS MITCHEL WC
Citation: Jm. Redwing et al., 2-DIMENSIONAL ELECTRON-GAS PROPERTIES OF ALGAN GAN HETEROSTRUCTURES GROWN ON 6H-SIC AND SAPPHIRE SUBSTRATES/, Applied physics letters, 69(7), 1996, pp. 963-965
A NEAR-FIELD SCANNING OPTICAL MICROSCOPY STUDY OF THE PHOTOLUMINESCENCE FROM GAN FILMS
Authors: LIU JT PERKINS NR HORTON MN REDWING JM TISCHLER MA KUECH TF
Citation: Jt. Liu et al., A NEAR-FIELD SCANNING OPTICAL MICROSCOPY STUDY OF THE PHOTOLUMINESCENCE FROM GAN FILMS, Applied physics letters, 69(23), 1996, pp. 3519-3521
AN OPTICALLY PUMPED GAN-ALGAN VERTICAL-CAVITY SURFACE-EMITTING LASER
Authors: REDWING JM LOEBER DAS ANDERSON NG TISCHLER MA FLYNN JS
Citation: Jm. Redwing et al., AN OPTICALLY PUMPED GAN-ALGAN VERTICAL-CAVITY SURFACE-EMITTING LASER, Applied physics letters, 69(1), 1996, pp. 1-3
Risultati: 1-25 | 26-33