AAAAAA
Results:
1-22
|
Results: 22
Authors:
LEECH PW
REEVES GK
ZHOU W
RESSEL P
Citation: Pw. Leech et al., THERMAL-STABILITY OF PD ZN AND PT BASED CONTACTS TO P-IN0.53GA0.47AS/INP WITH VARIOUS BARRIER LAYERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 227-231
Authors:
REEVES GK
COX DR
DARBY SC
WHITLEY E
Citation: Gk. Reeves et al., SOME ASPECTS OF MEASUREMENT ERROR IN EXPLANATORY VARIABLES FOR CONTINUOUS AND BINARY REGRESSION-MODELS, Statistics in medicine, 17(19), 1998, pp. 2157-2177
Authors:
LI Y
HARRISON HB
REEVES GK
Citation: Y. Li et al., CORRECTING SEPARATION ERRORS RELATED TO CONTACT RESISTANCE MEASUREMENT, Microelectronics, 29(1-2), 1998, pp. 21-30
Authors:
RESSEL P
LEECH PW
VEIT P
NEBAUER E
KLEIN A
KUPHAL E
REEVES GK
HARTNAGEL HL
Citation: P. Ressel et al., OHMIC PD ZN/AU/LAB6/AU CONTACTS ON P-TYPE IN0.53GA0.47AS - ELECTRICALAND METALLURGICAL PROPERTIES/, Journal of applied physics, 84(2), 1998, pp. 861-869
Authors:
THOMAS HV
REEVES GK
KEY TJA
Citation: Hv. Thomas et al., ENDOGENOUS ESTROGEN AND POSTMENOPAUSAL BREAST-CANCER A QUANTITATIVE REVIEW, CCC. Cancer causes & control, 8(6), 1997, pp. 922-928
Authors:
XIAO H
WONG CC
REEVES GK
Citation: H. Xiao et al., THERMAL CROSSTALK MODELING OF THIN-FILM RESISTOR ARRAYS, Journal of thermal analysis, 48(6), 1997, pp. 1293-1298
Authors:
LEECH PW
REEVES GK
Citation: Pw. Leech et Gk. Reeves, EFFECT OF LAYER STRUCTURE ON THE ELECTRICAL-PROPERTIES OF CONTACTS TOP-TYPE IN0.53GA0.47AS INP/, Thin solid films, 298(1-2), 1997, pp. 9-13
Authors:
REEVES GK
HARRISON HB
Citation: Gk. Reeves et Hb. Harrison, USING TLM PRINCIPLES TO DETERMINE MOSFET CONTACT AND PARASITIC RESISTANCE, Solid-state electronics, 41(8), 1997, pp. 1067-1074
Authors:
HOLLAND AS
REEVES GK
TAYLOR GN
Citation: As. Holland et al., COMPARISON OF INDIUM-DOPED AND UNDOPED GAAS MINIMUM IONIZING PARTICLEDETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 368(3), 1996, pp. 750-756
Authors:
RESSEL P
LEECH PW
REEVES GK
ZHOU W
KUPHAL E
Citation: P. Ressel et al., PD ZN/PD/AU AND PD/ZN/AU/LAB6/AU OHMIC CONTACTS TO P-TYPE IN0.53GA0.47AS/, Applied physics letters, 68(13), 1996, pp. 1841-1843
Authors:
LEECH PW
FAITH M
KEMENY PC
RIDGWAY MC
ELLIMAN RG
REEVES GK
ZHOU W
Citation: Pw. Leech et al., CHANNEL WAVE-GUIDES FORMED BY GERMANIUM IMPLANTATION IN FUSED-SILICA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 442-446
Authors:
REEVES GK
HARRISON HB
Citation: Gk. Reeves et Hb. Harrison, A TRI-LAYER TRANSMISSION-LINE MODEL APPLIED TO ALLOYED OHMIC CONTACTS, Solid-state electronics, 38(5), 1995, pp. 1115-1117
Authors:
REEVES GK
LEECH PW
HARRISON HB
Citation: Gk. Reeves et al., UNDERSTANDING THE SHEET RESISTANCE PARAMETER OF ALLOYED OHMIC CONTACTS USING A TRANSMISSION-LINE MODEL, Solid-state electronics, 38(4), 1995, pp. 745-751
Authors:
LEECH PW
REEVES GK
Citation: Pw. Leech et Gk. Reeves, THE MODIFIED SHEET RESISTANCE OF INDIUM CONTACTS TO N-TYPE HG1-XCDXTE, Solid-state electronics, 38(4), 1995, pp. 781-785
Authors:
ZAMORA M
GAZECKI J
REEVES GK
Citation: M. Zamora et al., INTERFACE STATES CAPACITANCE IN AUPTTI NGAAS SCHOTTKY CONTACTS - A MODIFIED SCHOTTKY CAPACITANCE SPECTROSCOPY METHOD/, Solid-state electronics, 38(10), 1995, pp. 1771-1774
Authors:
LEECH PW
REEVES GK
Citation: Pw. Leech et Gk. Reeves, ELECTRICAL CHARACTERISTICS AND THERMAL-STABILITY OF OHMIC CONTACTS TOP-TYPE IN0.47GA0.53 AS/INP/, Journal of applied physics, 77(8), 1995, pp. 3908-3912
Authors:
REEVES GK
HARRISON HB
Citation: Gk. Reeves et Hb. Harrison, AN ANALYTICAL MODEL FOR ALLOYED OHMIC CONTACTS USING A TRILAYER TRANSMISSION-LINE MODEL, I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1536-1547
Authors:
LEECH PW
REEVES GK
KIBEL MH
Citation: Pw. Leech et al., PD ZN/PD/AU OHMIC CONTACTS TO P-TYPE IN0.47GA0.53AS/INP/, Journal of applied physics, 76(8), 1994, pp. 4713-4718
Authors:
LEECH PW
REEVES GK
Citation: Pw. Leech et Gk. Reeves, PROPERTIES OF HGTE AS A CONTACT LAYER TO N-HG1-XCDXTE, Semiconductor science and technology, 8(12), 1993, pp. 2097-2100
Authors:
KUBICA JM
GAZECKI J
REEVES GK
Citation: Jm. Kubica et al., MULTIMODE OPERATION OF ARROW WAVE-GUIDES, Optics communications, 102(3-4), 1993, pp. 217-220
Authors:
KUBICA JM
MALAG A
GAZECKI J
AUSTIN MW
REEVES GK
Citation: Jm. Kubica et al., AIGAAS GAAS ARROW WAVE-GUIDES, Electronics Letters, 29(12), 1993, pp. 1058-1060
Authors:
REEVES GK
Citation: Gk. Reeves, GOODNESS-OF-FIT TESTS IN 2-STATE PROCESSES, Biometrika, 80(2), 1993, pp. 431-442
Risultati:
1-22
|