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Results: 1-12 |
Results: 12
SIMPLIFIED 0.35-MU-M FLASH EEPROM PROCESS USING HIGH-TEMPERATURE OXIDE (HTO) DEPOSITED BY LPCVD AS INTERPOLY DIELECTRICS AND PERIPHERAL TRANSISTORS GATE OXIDE
Authors: CANDELIER P MONDON F GUILLAUMOT B REIMBOLD G MARTIN F
Citation: P. Candelier et al., SIMPLIFIED 0.35-MU-M FLASH EEPROM PROCESS USING HIGH-TEMPERATURE OXIDE (HTO) DEPOSITED BY LPCVD AS INTERPOLY DIELECTRICS AND PERIPHERAL TRANSISTORS GATE OXIDE, IEEE electron device letters, 18(7), 1997, pp. 306-308
CHARGE-PUMPING CHARACTERIZATION OF TRANSISTORS WITH COMMON GATE, SOURCE AND BULK PADS
Authors: REIMBOLD G MARCHAND B BLACHIER D
Citation: G. Reimbold et al., CHARGE-PUMPING CHARACTERIZATION OF TRANSISTORS WITH COMMON GATE, SOURCE AND BULK PADS, Microelectronic engineering, 36(1-4), 1997, pp. 47-50
HIGH-TEMPERATURE OXIDE (HTO) FOR NON VOLATILE MEMORIES APPLICATIONS
Authors: CANDELIER P GUILLAUMOT B MONDON F REIMBOLD G ACHARD H MARTIN F
Citation: P. Candelier et al., HIGH-TEMPERATURE OXIDE (HTO) FOR NON VOLATILE MEMORIES APPLICATIONS, Microelectronic engineering, 36(1-4), 1997, pp. 87-90
LIGHT-EMISSION MICROSCOPY FOR THIN OXIDE RELIABILITY-ANALYSIS
Authors: LEROUX C BLACHIER D BRIERE O REIMBOLD G
Citation: C. Leroux et al., LIGHT-EMISSION MICROSCOPY FOR THIN OXIDE RELIABILITY-ANALYSIS, Microelectronic engineering, 36(1-4), 1997, pp. 297-300
TEMPERATURE-DEPENDENCE OF TRANSPORT AND TRAPPING PROPERTIES OF OXIDE-NITRIDE-OXIDE DIELECTRIC FILMS
Authors: KIES R GHIBAUDO G PANANAKAKIS G REIMBOLD G
Citation: R. Kies et al., TEMPERATURE-DEPENDENCE OF TRANSPORT AND TRAPPING PROPERTIES OF OXIDE-NITRIDE-OXIDE DIELECTRIC FILMS, Solid-state electronics, 41(7), 1997, pp. 1041-1049
HOLE TRAPPING IN FLASH EEPROM GATE OXIDE AND DAMAGES INDUCED BY GATE TO SOURCE ERASING
Authors: CANDELIER P MONDON F GUILLAUMOT B REIMBOLD G MARTIN F
Citation: P. Candelier et al., HOLE TRAPPING IN FLASH EEPROM GATE OXIDE AND DAMAGES INDUCED BY GATE TO SOURCE ERASING, Journal of non-crystalline solids, 216, 1997, pp. 162-167
COMPARISON OF HOT-CARRIERS EFFECTS IN SOI AND BULK DEVICES USING A PHOTON-EMISSION TECHNIQUE
Authors: GUICHARD E LEROUX C BLACHIER D REIMBOLD G CRISTOLOVEANU S BOREL G
Citation: E. Guichard et al., COMPARISON OF HOT-CARRIERS EFFECTS IN SOI AND BULK DEVICES USING A PHOTON-EMISSION TECHNIQUE, Quality and reliability engineering international, 12(4), 1996, pp. 291-296
ELECTROMIGRATION OF INTERCONNECTS OF A TIN CU/TIN/TI STRUCTURE/
Authors: BRAUD F TARTAVEL G PALLEAU J TORRES J PERSICO A REIMBOLD G
Citation: F. Braud et al., ELECTROMIGRATION OF INTERCONNECTS OF A TIN CU/TIN/TI STRUCTURE/, Quality and reliability engineering international, 12(4), 1996, pp. 305-308
EFFECTS OF PLASMA-INDUCED CHARGES ON THIN OXIDE OF CMOS TECHNOLOGIES
Authors: REIMBOLD G
Citation: G. Reimbold, EFFECTS OF PLASMA-INDUCED CHARGES ON THIN OXIDE OF CMOS TECHNOLOGIES, Microelectronics, 27(7), 1996, pp. 599-609
TEMPERATURE-DEPENDENCE OF THE OXIDE-NITRIDE-OXIDE INTERPOLY DIELECTRICS
Authors: KIES R GHIBAUDO G PANANAKAKIS G ROUXDITBUISSON O REIMBOLD G
Citation: R. Kies et al., TEMPERATURE-DEPENDENCE OF THE OXIDE-NITRIDE-OXIDE INTERPOLY DIELECTRICS, Microelectronic engineering, 28(1-4), 1995, pp. 309-312
COMPARISON OF THE GENERATED OXIDE CHARGE BY INJECTION OF ELECTRONS FOR BOTH POLARITIES
Authors: MEINERTZHAGEN A YARD G PETIT C JOURDAIN M ELHDIY A SALACE G REIMBOLD G
Citation: A. Meinertzhagen et al., COMPARISON OF THE GENERATED OXIDE CHARGE BY INJECTION OF ELECTRONS FOR BOTH POLARITIES, Journal of non-crystalline solids, 187, 1995, pp. 181-185
HOT-CARRIER DEGRADATION IN ULTRA-THIN FULLY-DEPLETED ACCUMULATION-MODE SIMOX N-MOSFETS
Authors: FAYNOT O CRISTOLOVEANU S AUBERTONHERVE AJ REIMBOLD G
Citation: O. Faynot et al., HOT-CARRIER DEGRADATION IN ULTRA-THIN FULLY-DEPLETED ACCUMULATION-MODE SIMOX N-MOSFETS, Microelectronic engineering, 22(1-4), 1993, pp. 407-410
Risultati: 1-12 |