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Authors: REITHMAIER JP FORCHEL A
Citation: Jp. Reithmaier et A. Forchel, FOCUSED ION-BEAM IMPLANTATION-INDUCED THERMAL QUANTUM-WELL INTERMIXING FOR MONOLITHIC OPTOELECTRONIC DEVICE INTEGRATION, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 595-605

Authors: KONIG H MAIS N HOFLING E REITHMAIER JP FORCHEL A MUSSIG H BRUGGER H
Citation: H. Konig et al., FOCUSED ION-BEAM IMPLANTATION FOR OPTOELECTRONIC AND MICROELECTRONIC DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2562-2566

Authors: MESSMER ER LOURDUDOSS S AHOPELTO J LIPSANEN H HIEKE K WESSTROM JO REITHMAIER JP KERKEL K FORCHEL A SEIFERT W CARLSSON N SAMUELSON L
Citation: Er. Messmer et al., HYDRIDE VAPOR-PHASE EPITAXY FOR NANOSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 238-241

Authors: KUTHER A BAYER M FORCHEL A GORBUNOV A TIMOFEEV VB SCHAFER F REITHMAIER JP
Citation: A. Kuther et al., ZEEMAN SPLITTING OF EXCITONS AND BIEXCITONS IN SINGLE IN0.60GA0.40AS GAAS SELF-ASSEMBLED QUANTUM DOTS/, Physical review. B, Condensed matter, 58(12), 1998, pp. 7508-7511

Authors: GUTBROD T BAYER M FORCHEL A REITHMAIER JP REINECKE TL RUDIN S KNIPP PA
Citation: T. Gutbrod et al., WEAK AND STRONG-COUPLING OF PHOTONS AND EXCITONS IN PHOTONIC DOTS, Physical review. B, Condensed matter, 57(16), 1998, pp. 9950-9956

Authors: TARTAKOVSKII AI KULAKOVSKII VD FORCHEL A REITHMAIER JP
Citation: Ai. Tartakovskii et al., EXCITON-PHOTON COUPLING IN PHOTONIC WIRES, Physical review. B, Condensed matter, 57(12), 1998, pp. 6807-6810

Authors: BAYER M GUTBROD T REITHMAIER JP FORCHEL A REINECKE TL KNIPP PA DREMIN AA KULAKOVSKII VD
Citation: M. Bayer et al., OPTICAL MODES IN PHOTONIC MOLECULES, Physical review letters, 81(12), 1998, pp. 2582-2585

Authors: HOFLING E REITHMAIER JP BAARS T BAYER M FORCHEL A
Citation: E. Hofling et al., OPTICAL AND STRUCTURAL-PROPERTIES OF GAINAS INP SINGLE QUANTUM-WELLS GROWN BY SOLID-SOURCE MBE WITH A GAP DECOMPOSITION SOURCE/, Journal of crystal growth, 191(4), 1998, pp. 607-612

Authors: SCHAFER F MAYER B REITHMAIER JP FORCHEL A
Citation: F. Schafer et al., HIGH-TEMPERATURE PROPERTIES OF GAINAS ALGAAS LASERS WITH IMPROVED CARRIER CONFINEMENT BY SHORT-PERIOD SUPERLATTICE QUANTUM-WELL BARRIERS/, Applied physics letters, 73(20), 1998, pp. 2863-2865

Authors: KONIG H REITHMAIER JP FORCHEL A GENTNER JL GOLDSTEIN L
Citation: H. Konig et al., 1.55 MU-M SINGLE-MODE LASERS WITH COMBINED GAIN COUPLING AND LATERAL CARRIER CONFINEMENT BY FOCUSED ION-BEAM IMPLANTATION, Applied physics letters, 73(19), 1998, pp. 2703-2705

Authors: OHNESORGE B BAYER M FORCHEL A REITHMAIER JP GIPPIUS NA TIKHODEEV SG
Citation: B. Ohnesorge et al., ENHANCEMENT OF SPONTANEOUS EMISSION RATES BY 3-DIMENSIONAL PHOTON CONFINEMENT IN BRAGG MICROCAVITIES, Physical review. B, Condensed matter, 56(8), 1997, pp. 4367-4370

Authors: BRAUN W BAYER M FORCHEL A ZULL H REITHMAIER JP FILIN AI REINECKE TL
Citation: W. Braun et al., ENHANCED EXCITON-PHONON SCATTERING IN INXGA1-XAS GAAS QUANTUM WIRES/, Physical review. B, Condensed matter, 56(19), 1997, pp. 12096-12099

Authors: BRAUN W BAYER M FORCHEL A ZULL H REITHMAIER JP FILIN AI WALCK SN REINECKE TL
Citation: W. Braun et al., EXCITONIC WAVE-PACKETS IN IN0.135GA0.865AS GAAS QUANTUM WIRES/, Physical review. B, Condensed matter, 55(15), 1997, pp. 9290-9293

Authors: REITHMAIER JP ROHNER M ZULL H SCHAFER F FORCHEL A KNIPP PA REINECKE TL
Citation: Jp. Reithmaier et al., SIZE DEPENDENCE OF CONFINED OPTICAL MODES IN PHOTONIC QUANTUM DOTS, Physical review letters, 78(2), 1997, pp. 378-381

Authors: TARTAKOVSKII AI KULAKOVSKII VD LARIONOV AV REITHMAIER JP FORCHEL A
Citation: Ai. Tartakovskii et al., ANGLE-RESOLVED PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF EXCITON-PHOTON MODES IN A MICROCAVITY - K-DEPENDENCE AND RELAXATION, Physica status solidi. a, Applied research, 164(1), 1997, pp. 81-84

Authors: ROHNER M REITHMAIER JP FORCHEL A SCHAFER F ZULL H
Citation: M. Rohner et al., LASER-EMISSION FROM PHOTONIC DOTS, Applied physics letters, 71(4), 1997, pp. 488-490

Authors: AHOPELTO J SOPANEN M LIPSANEN H LOURDUDOSS S MESSMER ER HOFLING E REITHMAIER JP FORCHEL A PETERSSON A SAMUELSON L
Citation: J. Ahopelto et al., MASKLESS SELECTIVE GROWTH OF INGAAS INP QUANTUM WIRES ON (100)GAAS/, Applied physics letters, 70(21), 1997, pp. 2828-2830

Authors: EISERT D BACHER G MAIS N REITHMAIER JP FORCHEL A JOBST B HOMMEL D LANDWEHR G
Citation: D. Eisert et al., GAIN-COUPLED DISTRIBUTED-FEEDBACK LASERS IN THE BLUE-GREEN SPECTRAL RANGE BY FOCUSED ION-BEAM IMPLANTATION, Journal of crystal growth, 159(1-4), 1996, pp. 591-594

Authors: ORTH A REITHMAIER JP ZEH R DOLESCHEL H FORCHEL A
Citation: A. Orth et al., FIRST-ORDER GAIN-COUPLED GAINAS GAAS DISTRIBUTED-FEEDBACK LASER-DIODES PATTERNED BY FOCUSED ION-BEAM IMPLANTATION/, Applied physics letters, 69(13), 1996, pp. 1906-1908

Authors: EISERT D BACHER G MAIS N REITHMAIER JP FORCHEL A JOBST B HOMMEL D LANDWEHR G
Citation: D. Eisert et al., FIRST-ORDER GAIN AND INDEX COUPLED DISTRIBUTED-FEEDBACK LASERS IN ZNSE-BASED STRUCTURES WITH FINELY TUNABLE EMISSION WAVELENGTHS, Applied physics letters, 68(5), 1996, pp. 599-601

Authors: KIESLICH A DOLESCHEL H KIESELING F REITHMAIER JP FORCHEL A
Citation: A. Kieslich et al., REDUCED LATERAL STRAGGLING OF IMPLANTATION-INDUCED DEFECTS IN III V HETEROSTRUCTURES BY ION-IMPLANTATION ALONG CHANNELING DIRECTIONS/, Applied physics letters, 68(1), 1996, pp. 102-104

Authors: ORTH A REITHMAIER JP FALLER F FORCHEL A
Citation: A. Orth et al., FIRST-ORDER GAIN-COUPLED (GA,IN)AS (AL,GA)AS DISTRIBUTED-FEEDBACK LASERS BY FOCUSED ION-BEAM IMPLANTATION AND IN-SITU OVERGROWTH/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2714-2717

Authors: ORTH A REITHMAIER JP FALLER F FORCHEL A
Citation: A. Orth et al., GAIN-COUPLED DISTRIBUTED-FEEDBACK GAINAS-GAAS LASER STRUCTURES DEFINED BY MASKLESS PATTERNING WITH FOCUSED ION-BEAMS, IEEE photonics technology letters, 7(8), 1995, pp. 845-847

Authors: MUESSIG H HACKBARTH T BRUGGER H ORTH A REITHMAIER JP FORCHEL A
Citation: H. Muessig et al., A CLOSED UHV FOCUSED ION-BEAM PATTERNING AND MBE REGROWTH TECHNIQUE, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 208-213

Authors: KIESLICH A DOLESCHEL H REITHMAIER JP FORCHEL A STOFFEL NG
Citation: A. Kieslich et al., IMPLANTATION-INDUCED DAMAGE IN III V-HETEROSTRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 594-597
Risultati: 1-25 | 26-38