Citation: Jp. Reithmaier et A. Forchel, FOCUSED ION-BEAM IMPLANTATION-INDUCED THERMAL QUANTUM-WELL INTERMIXING FOR MONOLITHIC OPTOELECTRONIC DEVICE INTEGRATION, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 595-605
Authors:
KONIG H
MAIS N
HOFLING E
REITHMAIER JP
FORCHEL A
MUSSIG H
BRUGGER H
Citation: H. Konig et al., FOCUSED ION-BEAM IMPLANTATION FOR OPTOELECTRONIC AND MICROELECTRONIC DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2562-2566
Authors:
KUTHER A
BAYER M
FORCHEL A
GORBUNOV A
TIMOFEEV VB
SCHAFER F
REITHMAIER JP
Citation: A. Kuther et al., ZEEMAN SPLITTING OF EXCITONS AND BIEXCITONS IN SINGLE IN0.60GA0.40AS GAAS SELF-ASSEMBLED QUANTUM DOTS/, Physical review. B, Condensed matter, 58(12), 1998, pp. 7508-7511
Authors:
GUTBROD T
BAYER M
FORCHEL A
REITHMAIER JP
REINECKE TL
RUDIN S
KNIPP PA
Citation: T. Gutbrod et al., WEAK AND STRONG-COUPLING OF PHOTONS AND EXCITONS IN PHOTONIC DOTS, Physical review. B, Condensed matter, 57(16), 1998, pp. 9950-9956
Authors:
HOFLING E
REITHMAIER JP
BAARS T
BAYER M
FORCHEL A
Citation: E. Hofling et al., OPTICAL AND STRUCTURAL-PROPERTIES OF GAINAS INP SINGLE QUANTUM-WELLS GROWN BY SOLID-SOURCE MBE WITH A GAP DECOMPOSITION SOURCE/, Journal of crystal growth, 191(4), 1998, pp. 607-612
Authors:
SCHAFER F
MAYER B
REITHMAIER JP
FORCHEL A
Citation: F. Schafer et al., HIGH-TEMPERATURE PROPERTIES OF GAINAS ALGAAS LASERS WITH IMPROVED CARRIER CONFINEMENT BY SHORT-PERIOD SUPERLATTICE QUANTUM-WELL BARRIERS/, Applied physics letters, 73(20), 1998, pp. 2863-2865
Authors:
KONIG H
REITHMAIER JP
FORCHEL A
GENTNER JL
GOLDSTEIN L
Citation: H. Konig et al., 1.55 MU-M SINGLE-MODE LASERS WITH COMBINED GAIN COUPLING AND LATERAL CARRIER CONFINEMENT BY FOCUSED ION-BEAM IMPLANTATION, Applied physics letters, 73(19), 1998, pp. 2703-2705
Authors:
OHNESORGE B
BAYER M
FORCHEL A
REITHMAIER JP
GIPPIUS NA
TIKHODEEV SG
Citation: B. Ohnesorge et al., ENHANCEMENT OF SPONTANEOUS EMISSION RATES BY 3-DIMENSIONAL PHOTON CONFINEMENT IN BRAGG MICROCAVITIES, Physical review. B, Condensed matter, 56(8), 1997, pp. 4367-4370
Authors:
TARTAKOVSKII AI
KULAKOVSKII VD
LARIONOV AV
REITHMAIER JP
FORCHEL A
Citation: Ai. Tartakovskii et al., ANGLE-RESOLVED PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF EXCITON-PHOTON MODES IN A MICROCAVITY - K-DEPENDENCE AND RELAXATION, Physica status solidi. a, Applied research, 164(1), 1997, pp. 81-84
Authors:
AHOPELTO J
SOPANEN M
LIPSANEN H
LOURDUDOSS S
MESSMER ER
HOFLING E
REITHMAIER JP
FORCHEL A
PETERSSON A
SAMUELSON L
Citation: J. Ahopelto et al., MASKLESS SELECTIVE GROWTH OF INGAAS INP QUANTUM WIRES ON (100)GAAS/, Applied physics letters, 70(21), 1997, pp. 2828-2830
Authors:
EISERT D
BACHER G
MAIS N
REITHMAIER JP
FORCHEL A
JOBST B
HOMMEL D
LANDWEHR G
Citation: D. Eisert et al., GAIN-COUPLED DISTRIBUTED-FEEDBACK LASERS IN THE BLUE-GREEN SPECTRAL RANGE BY FOCUSED ION-BEAM IMPLANTATION, Journal of crystal growth, 159(1-4), 1996, pp. 591-594
Authors:
EISERT D
BACHER G
MAIS N
REITHMAIER JP
FORCHEL A
JOBST B
HOMMEL D
LANDWEHR G
Citation: D. Eisert et al., FIRST-ORDER GAIN AND INDEX COUPLED DISTRIBUTED-FEEDBACK LASERS IN ZNSE-BASED STRUCTURES WITH FINELY TUNABLE EMISSION WAVELENGTHS, Applied physics letters, 68(5), 1996, pp. 599-601
Authors:
KIESLICH A
DOLESCHEL H
KIESELING F
REITHMAIER JP
FORCHEL A
Citation: A. Kieslich et al., REDUCED LATERAL STRAGGLING OF IMPLANTATION-INDUCED DEFECTS IN III V HETEROSTRUCTURES BY ION-IMPLANTATION ALONG CHANNELING DIRECTIONS/, Applied physics letters, 68(1), 1996, pp. 102-104
Citation: A. Orth et al., FIRST-ORDER GAIN-COUPLED (GA,IN)AS (AL,GA)AS DISTRIBUTED-FEEDBACK LASERS BY FOCUSED ION-BEAM IMPLANTATION AND IN-SITU OVERGROWTH/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2714-2717
Citation: A. Orth et al., GAIN-COUPLED DISTRIBUTED-FEEDBACK GAINAS-GAAS LASER STRUCTURES DEFINED BY MASKLESS PATTERNING WITH FOCUSED ION-BEAMS, IEEE photonics technology letters, 7(8), 1995, pp. 845-847
Authors:
MUESSIG H
HACKBARTH T
BRUGGER H
ORTH A
REITHMAIER JP
FORCHEL A
Citation: H. Muessig et al., A CLOSED UHV FOCUSED ION-BEAM PATTERNING AND MBE REGROWTH TECHNIQUE, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 208-213
Authors:
KIESLICH A
DOLESCHEL H
REITHMAIER JP
FORCHEL A
STOFFEL NG
Citation: A. Kieslich et al., IMPLANTATION-INDUCED DAMAGE IN III V-HETEROSTRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 594-597