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KOZHUKHOV AV
REVENKO MA
FEDOROV AA
KONARSKI P
HERMAN MA
Citation: Av. Kozhukhov et al., INFLUENCE OF AL ADSORPTION ON IN AND GA THERMAL-DESORPTION FROM INP AND GAAS-SURFACES HEATED UNDER AS-4 FLUX, Thin solid films, 306(2), 1997, pp. 248-252
Authors:
ALPEROVICH VL
BOLKHOVITYANOV YB
JAROSHEVICH AS
KATKOV AV
REVENKO MA
SCHEIBLER HE
TEREKHOV AS
Citation: Vl. Alperovich et al., SHIFTS AND SPLITTING OF ENERGY-BANDS IN ELASTICALLY STRAINED INGAP GAAS(111)B EPITAXIAL-FILMS/, Journal of applied physics, 82(3), 1997, pp. 1214-1219
Citation: Av. Kozhukhov et al., MONITORING MOLECULAR FLUXES WITH THE USE OF REFLECTION MASS-SPECTROMETRY TO CONTROL THE COMPOSITION OF INXGA1-XAS FILMS, Instruments and experimental techniques, 40(1), 1997, pp. 133-135
Authors:
BOLKHOVITYANOV YB
JAROSHEVICH AS
REVENKO MA
SCHEIBLER HE
TEREKHOV AS
Citation: Yb. Bolkhovityanov et al., SHEAR DEFORMATION POTENTIAL OF ELASTICALLY STRAINED INGAP GAAS(111)B AND INGAASP/GAAS(111)B FILMS/, Semiconductor science and technology, 11(12), 1996, pp. 1847-1849
Authors:
BOLKHOVITYANOV YB
JAROSHEVICH AS
NOMEROTSKY NV
REVENKO MA
TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., LIQUID-PHASE EPITAXY OF HIGHLY STRAINED INGAASP GAAS FILMS IN THE 1.4-1.8 EV INTERVAL OF BAND-GAPS/, Journal of crystal growth, 158(3), 1996, pp. 217-223
Authors:
BOLKHOVITYANOV YB
JAROSHEVICH AS
NOMEROTSKY NV
REVENKO MA
TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., HIGHLY STRAINED INGAASP FILMS WITH HIGH CRITICAL THICKNESSES, Journal of applied physics, 79(10), 1996, pp. 7636-7639