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Results:
1-12
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Results: 12
Authors:
LEE SY
KIM DW
RHA SK
PARK CO
PARK HH
Citation: Sy. Lee et al., REFLOW OF COPPER IN AN OXYGEN AMBIENT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2902-2905
Authors:
RHA SK
LEE SY
LEE WJ
HWANG YS
PARK CO
KIM DW
LEE YS
WHANG CN
Citation: Sk. Rha et al., CHARACTERIZATION OF TIN BARRIERS AGAINST CU DIFFUSION BY CAPACITANCE-VOLTAGE MEASUREMENT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2019-2025
Authors:
RHA SK
LEE WJ
LEE SY
HWANG YS
LEE YJ
KIM DI
KIM DW
CHUN SS
PARK CO
Citation: Sk. Rha et al., IMPROVED TIN FILM AS A DIFFUSION BARRIER BETWEEN COPPER AND SILICON, Thin solid films, 320(1), 1998, pp. 134-140
Authors:
LEE YJ
SUH BS
RHA SK
PARK CO
Citation: Yj. Lee et al., STRUCTURAL AND CHEMICAL-STABILITY OF TA-SI-N THIN-FILM BETWEEN SI ANDCU, Thin solid films, 320(1), 1998, pp. 141-146
Authors:
LEE SY
RHA SK
LEE WJ
KIM DW
HWANG JS
PARK CO
Citation: Sy. Lee et al., EFFECTS OF THE PARTIAL-PRESSURE OF COPPER(I) HEXAFLUOROACETYLACETONATE TRIMETHYLVINYLSILANE ON THE CHEMICAL-VAPOR-DEPOSITION OF COPPER, JPN J A P 1, 36(8), 1997, pp. 5249-5252
Authors:
RHA SK
LEE WJ
LEE SY
KIM DW
PARK CO
Citation: Sk. Rha et al., GRAIN-GROWTH OF COPPER-FILMS PREPARED BY CHEMICAL-VAPOR-DEPOSITION, Journal of materials science. Materials in electronics, 8(4), 1997, pp. 217-221
Authors:
KIM DW
KIM KJ
KIM DI
LEE WJ
LEE SY
LEE YJ
RHA SK
PARK CO
Citation: Dw. Kim et al., EFFECTS OF THE INTEGRITY OF SILICON THIN-FILMS ON THE ELECTRICAL CHARACTERISTICS OF THIN DIELECTRIC ONO FILM, Journal of materials science. Materials in electronics, 8(2), 1997, pp. 91-94
Authors:
RHA SK
LEE WJ
LEE SY
KIM DW
PARK CO
CHUN SS
Citation: Sk. Rha et al., INTERDIFFUSIONS AND REACTIONS IN CU TIN/TI/SI AND CU/TIN/TI/SIO2/SI MULTILAYER STRUCTURES/, Journal of materials research, 12(12), 1997, pp. 3367-3372
Authors:
LEE WJ
RHA SK
LEE SY
PARK CO
Citation: Wj. Lee et al., FIELD-AIDED THERMAL CHEMICAL-VAPOR-DEPOSITION OF COPPER USING CU(I) ORGANOMETALLIC PRECURSOR, Journal of the Electrochemical Society, 144(2), 1997, pp. 683-686
Authors:
RHA SK
LEE WJ
LEE SY
KIM DW
PARK CO
CHUN SS
Citation: Sk. Rha et al., EFFECTS OF THE ANNEALING IN AR AND H-2 AR AMBIENTS ON THE MICROSTRUCTURE AND THE ELECTRICAL-RESISTIVITY OF THE COPPER FILM PREPARED BY CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 35(11), 1996, pp. 5781-5786
Authors:
LEE WJ
MIN JS
RHA SK
CHUN NS
PARK CO
KIM DW
Citation: Wj. Lee et al., COPPER CHEMICAL-VAPOR-DEPOSITION USING COPPER(I) HEXAFLUOROACETYLACETONATE TRIMETHYLVINYLSILANE, Journal of materials science. Materials in electronics, 7(2), 1996, pp. 111-117
Authors:
LEE EG
RHA SK
Citation: Eg. Lee et Sk. Rha, A STUDY OF THE MORPHOLOGY AND MICROSTRUCTURE OF LPCVD POLYSILICON, Journal of Materials Science, 28(23), 1993, pp. 6279-6284
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1-12
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