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Results:
1-7
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Results: 7
Authors:
RICHTER HH
AMINPUR MA
ERZGRABER HB
WOLFF A
KRUGER D
DEHOFF A
REETZ M
Citation: Hh. Richter et al., SILICON DRY-ETCHING IN HYDROGEN IODIDE PLASMAS - SURFACE DIAGNOSTICS AND TECHNOLOGICAL APPLICATIONS, JPN J A P 1, 36(7B), 1997, pp. 4849-4853
Authors:
TILLACK B
RICHTER HH
RITTER G
WOLFF A
MORGENSTERN G
EGGS C
Citation: B. Tillack et al., MONITORING OF DEPOSITION AND DRY-ETCHING OF SI SIGE MULTIPLE STACKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 102-105
Authors:
RICHTER HH
WOLFF A
BLUM K
HOEPPNER K
KRUGER D
SORGE D
Citation: Hh. Richter et al., DAMAGE TO SI SUBSTRATES DURING SIO2 ETCHING - OPPORTUNITIES OF SUBSEQUENT REMOVAL BY OPTIMIZED CLEANING PROCEDURES, Vacuum, 47(5), 1996, pp. 437-443
Authors:
RICHTER HH
WOLFF A
TILLACK B
KRUGER D
HOPPNER K
EGGS C
Citation: Hh. Richter et al., STUDIES OF SIGE ALLOY SURFACES AFTER REACTIVE ION ETCHING, Physica status solidi. a, Applied research, 152(2), 1995, pp. 443-450
Authors:
RICHTER HH
WOLFF A
TILLACK B
SKALOUD T
Citation: Hh. Richter et al., OPTICAL-EMISSION END-POINT DETECTION FOR REACTIVE ION ETCHING OF SI SIGE STRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 27(1), 1994, pp. 39-45
Authors:
RICHTER HH
WOLFF A
TILLACK B
SKALOUD T
Citation: Hh. Richter et al., OPTICAL-EMISSION END-POINT DETECTION FOR REACTIVE ION ETCHING OF SI SIGE STRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 27(1), 1994, pp. 39-45
Authors:
RICHTER HH
TILLACK B
ANDRA H
WEINELT W
Citation: Hh. Richter et al., THERMAL-ANALYSIS ON ZONE-MELTING RECRYSTALLIZATION OF SILICON-ON-INSULATOR FILMS USING A FINITE-DIFFERENCE METHOD, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 173(1-2), 1993, pp. 59-62
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