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Results: 1-18 |
Results: 18
PUMP GEOMETRY FOR RESONANT AND QUASI-RESONANT OPTICAL-EXCITATION OF MICROCAVITY LASERS
Authors: HOFMANN M JAHNKE F ELLMERS C OESTREICH M SCHNEIDER HC KOCH SW RUHLE WW HILPERT M KLANN H WOLF HD BERNKLAU D RIECHERT H
Citation: M. Hofmann et al., PUMP GEOMETRY FOR RESONANT AND QUASI-RESONANT OPTICAL-EXCITATION OF MICROCAVITY LASERS, Optics letters, 23(11), 1998, pp. 849-851
GIANT ACOUSTOELECTRIC EFFECT IN GAAS LINBO3 HYBRIDS/
Authors: ROTTER M WIXFORTH A RUILE W BERNKLAU D RIECHERT H
Citation: M. Rotter et al., GIANT ACOUSTOELECTRIC EFFECT IN GAAS LINBO3 HYBRIDS/, Applied physics letters, 73(15), 1998, pp. 2128-2130
DEFECT-INDUCED RAMAN-SCATTERING IN RESONANCE WITH YELLOW LUMINESCENCETRANSITIONS IN HEXAGONAL GAN ON A SAPPHIRE SUBSTRATE
Authors: JIANG DS RAMSTEINER M PLOOG KH TEWS H GRABER A AVERBECK R RIECHERT H
Citation: Ds. Jiang et al., DEFECT-INDUCED RAMAN-SCATTERING IN RESONANCE WITH YELLOW LUMINESCENCETRANSITIONS IN HEXAGONAL GAN ON A SAPPHIRE SUBSTRATE, Applied physics letters, 72(3), 1998, pp. 365-367
PLASMA PRECONDITIONING OF SAPPHIRE SUBSTRATE FOR GAN EPITAXY
Authors: HEINLEIN C GREPSTAD J RIECHERT H AVERBECK R
Citation: C. Heinlein et al., PLASMA PRECONDITIONING OF SAPPHIRE SUBSTRATE FOR GAN EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 253-257
INFLUENCE OF CARRIER COOLING ON THE EMISSION DYNAMICS OF SEMICONDUCTOR MICROCAVITY LASERS
Authors: HILPERT M HOFMANN M ELLMERS C OESTREICH M SCHNEIDER HC JAHNKE F KOCH SW RUHLE WW WOLF HD BERNKLAU D RIECHERT H
Citation: M. Hilpert et al., INFLUENCE OF CARRIER COOLING ON THE EMISSION DYNAMICS OF SEMICONDUCTOR MICROCAVITY LASERS, Physica status solidi. b, Basic research, 204(1), 1997, pp. 548-551
STRUCTURAL AND OPTICAL ANALYSIS OF EPITAXIAL GAN ON SAPPHIRE
Authors: STRAUB U TEWS H RIECHERT H AVERBECK R SCHIENLE M JOBST B VOLM D STREIBL T MEYER BK RUHLE WW
Citation: U. Straub et al., STRUCTURAL AND OPTICAL ANALYSIS OF EPITAXIAL GAN ON SAPPHIRE, Semiconductor science and technology, 12(5), 1997, pp. 637-644
BLUE AND GREEN ELECTROLUMINESCENCE FROM GAN INGAN HETEROSTRUCTURES/
Authors: AVERBECK R TEWS H GRABER A RIECHERT H
Citation: R. Averbeck et al., BLUE AND GREEN ELECTROLUMINESCENCE FROM GAN INGAN HETEROSTRUCTURES/, Journal of crystal growth, 175, 1997, pp. 122-124
A GAAS HEMT MMIC CHIP SET FOR AUTOMOTIVE RADAR SYSTEMS FABRICATED BY OPTICAL STEPPER LITHOGRAPHY
Authors: MULLER JE GRAVE T SIWERIS HJ KARNER M SCHAFER A TISCHER H RIECHERT H SCHLEICHER L VERWEYEN L BANGERT A KELLNER W MEIER T
Citation: Je. Muller et al., A GAAS HEMT MMIC CHIP SET FOR AUTOMOTIVE RADAR SYSTEMS FABRICATED BY OPTICAL STEPPER LITHOGRAPHY, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1342-1349
PRECONDITIONING OF C-PLANE SAPPHIRE FOR GAN EPITAXY BY RADIO-FREQUENCY PLASMA NITRIDATION
Authors: HEINLEIN C GREPSTAD J BERGE T RIECHERT H
Citation: C. Heinlein et al., PRECONDITIONING OF C-PLANE SAPPHIRE FOR GAN EPITAXY BY RADIO-FREQUENCY PLASMA NITRIDATION, Applied physics letters, 71(3), 1997, pp. 341-343
INFLUENCE OF CARRIER RELAXATION ON THE DYNAMICS OF STIMULATED-EMISSION IN MICROCAVITY LASERS
Authors: HILPERT M KLANN H HOFMANN M ELLMERS C OESTREICH M SCHNEIDER HC JAHNKE F KOCH SW RUHLE WW WOLF HD BERNKLAU D RIECHERT H
Citation: M. Hilpert et al., INFLUENCE OF CARRIER RELAXATION ON THE DYNAMICS OF STIMULATED-EMISSION IN MICROCAVITY LASERS, Applied physics letters, 71(26), 1997, pp. 3761-3763
CARRIER MOBILITIES IN GRADED INXGA1-XAS AL0.2GA0.8AS QUANTUM-WELLS FOR HIGH-ELECTRON-MOBILITY TRANSISTORS/
Authors: STRAUSS U BERNKLAU D RIECHERT H FINKBEINER S
Citation: U. Strauss et al., CARRIER MOBILITIES IN GRADED INXGA1-XAS AL0.2GA0.8AS QUANTUM-WELLS FOR HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of applied physics, 80(1), 1996, pp. 322-325
BLUE AND GREEN ELECTROLUMINESCENCE FROM MBE GROWN GAN INGAN HETEROSTRUCTURES/
Authors: TEWS H AVERBECK R GRABER A RIECHERT H
Citation: H. Tews et al., BLUE AND GREEN ELECTROLUMINESCENCE FROM MBE GROWN GAN INGAN HETEROSTRUCTURES/, Electronics Letters, 32(21), 1996, pp. 2004-2006
EMISSION DYNAMICS OF IN0.2GA0.8AS GAAS-LAMBDA AND 2-LAMBDA MICROCAVITY LASERS/
Authors: MICHLER P HILPERT M RUHLE WW WOLF HD BERNKLAU D RIECHERT H
Citation: P. Michler et al., EMISSION DYNAMICS OF IN0.2GA0.8AS GAAS-LAMBDA AND 2-LAMBDA MICROCAVITY LASERS/, Applied physics letters, 68(2), 1996, pp. 156-158
X-RAY STANDING-WAVE MEASUREMENTS ON III-V COMPOUND HETEROSTRUCTURES
Authors: LESSMANN A BRENNAN S MATERLIK B SCHUSTER M RIECHERT H
Citation: A. Lessmann et al., X-RAY STANDING-WAVE MEASUREMENTS ON III-V COMPOUND HETEROSTRUCTURES, Review of scientific instruments, 66(2), 1995, pp. 1428-1430
HIGH-RESOLUTION X-RAY-DIFFRACTION AND X-RAY STANDING-WAVE ANALYSES OF(ALAS)(M)(GAAS)(N) SHORT-PEROID SUPERLATTICES
Authors: SCHUSTER M LESSMANN A MUNKHOLM A BRENNAN S MATERLIK G RIECHERT H
Citation: M. Schuster et al., HIGH-RESOLUTION X-RAY-DIFFRACTION AND X-RAY STANDING-WAVE ANALYSES OF(ALAS)(M)(GAAS)(N) SHORT-PEROID SUPERLATTICES, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 206-211
IN STEP - GYPSIES IN THE MILITARY
Authors: RIECHERT H
Citation: H. Riechert, IN STEP - GYPSIES IN THE MILITARY, Militargeschichtliche Mitteilungen, 53(2), 1994, pp. 377-397
NARROW-BAND LANDAU EMISSION FROM HIGH-PURITY GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: WIRNER C STRASSER G STEEB C GORNIK E RIECHERT H
Citation: C. Wirner et al., NARROW-BAND LANDAU EMISSION FROM HIGH-PURITY GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 168(1), 1993, pp. 117-119
TEMPERATURE-DEPENDENCE OF THE MINIMUM V III RATIO FOR THE GROWTH OF INXGA1-XAS/
Authors: RIECHERT H AVERBECK R BERNKLAU D
Citation: H. Riechert et al., TEMPERATURE-DEPENDENCE OF THE MINIMUM V III RATIO FOR THE GROWTH OF INXGA1-XAS/, Journal of crystal growth, 127(1-4), 1993, pp. 575-578
Risultati: 1-18 |