Authors:
FERNIER B
GERARD F
PAGNOD P
MICHAUD G
RIPOCHE G
VENDROME G
CAPELLA RM
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Citation: G. Ripoche et al., HIGH-SPEED (GREATER-THAN-OR-EQUAL-TO-6 GHZ) INGAAS INP AVALANCHE PHOTODIODES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH A THIN QUATERNARY GRADING LAYER FOR HIGH BIT-RATE (GREATER-THAN-OR-EQUAL-TO 5 GBIT/S) SYSTEMS/, Journal de physique. III, 3(9), 1993, pp. 1761-1767