Citation: Jp. Riviere et al., MECHANICAL-PROPERTIES OF SIC FILMS PREPARED BY DYNAMIC ION MIXING, Surface & coatings technology, 67(1-2), 1994, pp. 43-49
Citation: G. Patriarche et al., MISFIT ACCOMMODATION AND DISLOCATIONS IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - II-VI COMPOUNDS ON GAAS, Journal de physique. III, 3(6), 1993, pp. 1189-1199
Citation: Jp. Riviere et al., ELECTRONIC STOPPING EFFECTS IN FE60CO40 FILMS IRRADIATED WITH HIGH-ENERGY IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 65-69
Authors:
JAOUEN C
DENANOT MF
RIVIERE JP
RUAULT MO
SALOME M
Citation: C. Jaouen et al., IN-SITU TEM STUDY OF ION-INDUCED AMORPHIZATION AT LOW-TEMPERATURE IN AL3TI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 386-389
Authors:
PATRIARCHE G
CARLI AT
RIVIERE JP
TRIBOULET R
MARFAING Y
CASTAING J
Citation: G. Patriarche et al., EXTENDED DEFECTS IN II-VI SEMICONDUCTOR HETEROEPITAXIAL LAYERS GROWN ON GAAS SUBSTRATES OF VARIOUS ORIENTATIONS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 437-443
Citation: D. Imhoff et al., MICROSTRUCTURE OF HIGH-TEMPERATURE PLASTICALLY DEFORMED ZN-DOPED CDTE- COMPARISON WITH IN-DOPED GAAS, Journal of crystal growth, 130(3-4), 1993, pp. 627-635