AAAAAA
Results:
1-16
|
Results: 16
Authors:
BUSCHMANN V
FEDINA L
RODEWALD M
VANTENDELOO G
Citation: V. Buschmann et al., A NEW MODEL FOR THE (2X1) RECONSTRUCTED COSI2-SI(100) INTERFACE, Philosophical magazine letters, 77(3), 1998, pp. 147-151
Authors:
DEMEULENAERE P
RODEWALD M
VANTENDELOO G
Citation: P. Demeulenaere et al., ANISOTROPIC CLUSTER MODEL FOR THE SHORT-RANGE ORDER IN CU1-XPDX-TYPE ALLOYS, Physical review. B, Condensed matter, 57(18), 1998, pp. 11132-11140
Authors:
BRECHT E
REINER J
RODEWALD M
LINKER G
Citation: E. Brecht et al., EPITAXIAL-GROWTH OF YBA2CU3O7-X THIN-FILMS ON (111)SRTIO3 SUBSTRATES, Thin solid films, 319(1-2), 1998, pp. 202-206
Authors:
BUSCHMANN V
RODEWALD M
FUESS H
VANTENDELOO G
SCHAFFER C
Citation: V. Buschmann et al., HETEROEPITAXIAL GROWTH OF COSI2 THIN-FILMS ON SI(100) - TEMPLATE EFFECTS AND EPITAXIAL ORIENTATIONS, Journal of crystal growth, 191(3), 1998, pp. 430-438
OHMIC CONTACT FORMATION MECHANISM OF THE PDGEAU SYSTEM ON N-TYPE GASBGROWN BY MOLECULAR-BEAM EPITAXY
Authors:
VOGT A
SIMON A
HARTNAGEL HL
SCHIKORA J
BUSCHMANN V
RODEWALD M
FUESS H
FASCKO S
KOERDT C
KURZ H
Citation: A. Vogt et al., OHMIC CONTACT FORMATION MECHANISM OF THE PDGEAU SYSTEM ON N-TYPE GASBGROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 83(12), 1998, pp. 7715-7719
Authors:
RODEWALD M
RAHMAN SH
Citation: M. Rodewald et Sh. Rahman, XMULTI - A PROGRAM FOR HRTEM IMAGE-CONTRA ST SIMULATION OF REAL STRUCTURES UNDER XWINDOWS, European journal of cell biology, 74, 1997, pp. 19-19
Authors:
BUSCHMANN V
RODEWALD M
FUESS H
Citation: V. Buschmann et al., A NEW MODEL FOR THE (2X1)-RECONSTRUCTED COSI2 SI(001) INTERFACE BASEDON THE INTERMEDIATE DEFECT CONFIGURATION/, European journal of cell biology, 74, 1997, pp. 115-115
Authors:
RODEWALD M
RODEWALD K
DEMEULENAERE P
VANTENDELOO G
Citation: M. Rodewald et al., REAL-SPACE CHARACTERIZATION OF SHORT-RANGE ORDER IN CU-PD ALLOYS, Physical review. B, Condensed matter, 55(21), 1997, pp. 14173-14181
Authors:
BRECHT E
FROMKNECHT R
GEERK J
MEYER O
REINER J
RODEWALD M
SCHNEIDER R
LINKER G
Citation: E. Brecht et al., THE [113]-GROWTH-DIRECTION OF YBA2CU3O7-X THIN-FILMS, Solid state communications, 102(12), 1997, pp. 849-853
Authors:
VOGT A
BRANDT M
SIGURDARDOTTIR A
SCHUSSLER M
PENA D
SIMON A
HARTNAGEL HL
RODEWALD M
ROESNER M
FUESS H
GOSWAMI SNN
LAL K
Citation: A. Vogt et al., CHARACTERIZATION OF DEGRADATION MECHANISMS IN RESONANT-TUNNELING DIODES, Microelectronics and reliability, 37(10-11), 1997, pp. 1691-1694
Authors:
NITSCHE R
RODEWALD M
SKANDAN G
FUESS H
HAHN H
Citation: R. Nitsche et al., HRTEM STUDY OF NANOCRYSTALLINE ZIRCONIA POWDERS, Nanostructured materials, 7(5), 1996, pp. 535-546
Authors:
BRECHT E
SCHMAHL WW
MIEHE G
RODEWALD M
FUESS H
ANDERSEN NH
HANSSMANN J
WOLF T
Citation: E. Brecht et al., THERMAL-TREATMENT OF YBA2CU3-XALXO6-CRYSTALS IN DIFFERENT ATMOSPHERESAND NEUTRON-DIFFRACTION STUDY OF EXCESS OXYGEN PINNED BY THE AL SUBSTITUENTS(DELTA SINGLE), Physica. C, Superconductivity, 265(1-2), 1996, pp. 53-66
Authors:
SCHAFFER C
RODEWALD M
Citation: C. Schaffer et M. Rodewald, GROWTH OF EPITAXIAL COSI2 FILMS ON STRAINED SI1-XGEX SI(001) HETEROSTRUCTURES/, Journal of crystal growth, 165(1-2), 1996, pp. 61-69
Authors:
STEINBORN T
ADRIAN H
BRECHT E
FUESS H
MAUL M
MIEHE G
PETERSEN K
RODEWALD M
RAO M
SCHMAHL WW
TRAEHOLT C
WIESNER J
WIRTH G
ZANDBERGEN H
ZEGENHAGEN J
Citation: T. Steinborn et al., ORIENTATIONAL CHANGES IN THE AB PLANE OF YBA2CU3O7-DELTA FILMS ON DIFFERENT SUBSTRATES, Journal of applied crystallography, 29, 1996, pp. 125-133
Authors:
TONSHOFF HK
BLAWIT C
RODEWALD M
WOBKER HG
Citation: Hk. Tonshoff et al., DEVELOPMENT AND WEAR BEHAVIOR OF SILICON- NITRIDE CERAMIC, Materialwissenschaft und Werkstofftechnik, 26(5), 1995, pp. 255-262
Authors:
RAHMAN SH
RODEWALD M
Citation: Sh. Rahman et M. Rodewald, SIMULATION OF SHORT-RANGE ORDER IN FCC ALLOYS, Acta crystallographica. Section A, Foundations of crystallography, 51, 1995, pp. 153-158
Risultati:
1-16
|