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Results:
1-8
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Results: 8
Authors:
KIM G
ROH DW
PAEK SW
Citation: G. Kim et al., ENHANCED ELECTRON-TUNNELING AND GAMMA-X INTERLAYER INTERVALLEY ELECTRON-TRANSFER IN A TRIPLE-BARRIER HETEROSTRUCTURE, Superlattices and microstructures, 23(5), 1998, pp. 1047-1052
Authors:
LEE HG
KIM SG
ROH DW
LEE JJ
PYUN KE
Citation: Hg. Lee et al., V-SHAPED DEFECTS IN INXGA1-XAS IN0.52AL0.48AS/INP PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURE/, Materials science & engineering. B, Solid-state materials for advanced technology, 47(2), 1997, pp. 145-149
Authors:
ROH DW
YUN SJ
KIM K
CHOI JS
CHOO WK
Citation: Dw. Roh et al., EFFECT OF IONIZATION AND ACCELERATION OF AS-SOURCE BEAM ON STRUCTURAL-PROPERTIES OF LOW-TEMPERATURE-GROWN GAAS (VOL 31, PG 135, 1997), Journal of the Korean Physical Society, 31(2), 1997, pp. 373-373
Authors:
ROH DW
YUN SJ
KIM K
CHOI JS
CHOO WK
Citation: Dw. Roh et al., EFFECT OF IONIZATION AND ACCELERATION OF AS-SOURCE BEAM ON STRUCTURAL-PROPERTIES OF LOW-TEMPERATURE-GROWN GAAS, Journal of the Korean Physical Society, 31(1), 1997, pp. 135-139
Authors:
KIM G
ROH DW
PAEK SW
Citation: G. Kim et al., GAMMA-X TRANSFER AND RESONANT-TUNNELING IN ALAS GAAS TRIPLE-BARRIER STRUCTURE/, Journal of the Korean Physical Society, 31(1), 1997, pp. 206-209
Authors:
KIM GG
ROH DW
PAEK SW
LEE EH
Citation: Gg. Kim et al., GAMMA-X ELECTRON-TRANSFER IN A TRIPLE-BARRIER HETEROSTRUCTURE, Journal of applied physics, 82(7), 1997, pp. 3368-3373
Authors:
KIM G
ROH DW
PAEK SW
Citation: G. Kim et al., ENHANCEMENT OF RESONANT-TUNNELING CURRENT AT ROOM-TEMPERATURE, Journal of applied physics, 81(10), 1997, pp. 7070-7072
Authors:
ROH DW
LEE HG
LEE JJ
Citation: Dw. Roh et al., ELECTRON-MOBILITY CHARACTERISTICS OF INXGA1-XAS INALAS/INP HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 167(3-4), 1996, pp. 468-472
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1-8
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