Authors: LEE JH LYU JS ROH TM KIM BW

Citation: Jh. Lee et al., EFFECTS OF BUFFER LAYER STRUCTURE ON POLYSILICON BUFFER LOGOS FOR THEISOLATION OF SUBMICRON SILICON DEVICES, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2153-2160

Authors: IHN B LEE J ROH TM KIM YS KIM B

Citation: B. Ihn et al., SURFACE RECOMBINATION RELATED FREQUENCY DISPERSION OF CURRENT GAIN INALGAAS GAAS HBTS (VOL 34, PG 1031, 1998)/, Electronics Letters, 34(20), 1998, pp. 1985-1985

Authors: IHN B LEE J ROH TM KIM YS KIM B

Citation: B. Ihn et al., SURFACE RECOMBINATION RELATED FREQUENCY DISPERSION OF CURRENT GAIN INALGAAS GAAS HBTS/, Electronics Letters, 34(10), 1998, pp. 1031-1033

Authors: ROH TM KIM Y SUH Y PARK WS KIM B

Citation: Tm. Roh et al., A SIMPLE AND ACCURATE MESFET CHANNEL-CURRENT MODEL INCLUDING BIAS-DEPENDENT DISPERSION AND THERMAL PHENOMENA, IEEE transactions on microwave theory and techniques, 45(8), 1997, pp. 1252-1255

Authors: ROH TM SUH YS KIM YS PARK WS KIM BM

Citation: Tm. Roh et al., A HIGHLY ACCURATE MESFET MODEL TO PREDICT THE NONLINEAR BEHAVIOR OF ALINEAR POWER-AMPLIFIER, Microwave and optical technology letters, 13(4), 1996, pp. 184-186

Authors: ROH TM SUH Y KIM B PARK W LEE JB KIM YS LEE GY

Citation: Tm. Roh et al., GAAS LOW-HIGH DOPED MESFET MMIC POWER-AMPLIFIER FOR CDMA AMPS DUAL-MODE CELLULAR TELEPHONE/, Electronics Letters, 32(20), 1996, pp. 1928-1929