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Results: 1-10 |
Results: 10
SLEEPINESS DOES NOT MODULATE EXPERIMENTAL JOINT PAIN IN HEALTHY-VOLUNTEERS
Authors: DREWES AM ROSSEL P ARENDTNIELSEN L NIELSEN KD HANSEN LM BIRKETSMITH L STENGAARDPEDERSEN K
Citation: Am. Drewes et al., SLEEPINESS DOES NOT MODULATE EXPERIMENTAL JOINT PAIN IN HEALTHY-VOLUNTEERS, Scandinavian journal of rheumatology, 26(5), 1997, pp. 399-400
POWER MOS DEVICES - STRUCTURE EVOLUTIONS AND MODELING APPROACHES
Authors: ROSSEL P TRANDUC H CHARITAT G
Citation: P. Rossel et al., POWER MOS DEVICES - STRUCTURE EVOLUTIONS AND MODELING APPROACHES, Microelectronics and reliability, 37(9), 1997, pp. 1375-1388
SENSORY CHARACTERISTICS IN THE REFERRED PAIN AREA DURING ELECTRICAL STIMULI OF THE GASTRIC-MUCOSA
Authors: DREWES AM ARENDTNIELSEN L KRARUP HB HANSEN JB JENSEN JH ROSSEL P TAGEJENSEN U
Citation: Am. Drewes et al., SENSORY CHARACTERISTICS IN THE REFERRED PAIN AREA DURING ELECTRICAL STIMULI OF THE GASTRIC-MUCOSA, Gastroenterology, 112(4), 1997, pp. 723-723
STATIC AND DYNAMIC PROPERTIES OF LOW-VOLT AGE TRENCH POWER MOSFET OR UMOSFET
Authors: MORANCHO F ROSSEL P TRANDUC H
Citation: F. Morancho et al., STATIC AND DYNAMIC PROPERTIES OF LOW-VOLT AGE TRENCH POWER MOSFET OR UMOSFET, Journal de physique. III, 6(2), 1996, pp. 301-322
MODELING AND IMPROVING THE ON-RESISTANCE OF LDMOS RESURF DEVICES
Authors: CHARITAT G BOUANANE MA AUSTIN P ROSSEL P
Citation: G. Charitat et al., MODELING AND IMPROVING THE ON-RESISTANCE OF LDMOS RESURF DEVICES, Microelectronics, 27(2-3), 1996, pp. 181-190
SUBTHRESHOLD LATCH-UP IN MOS THYRISTOR AN D MCT DEVICES
Authors: SANCHEZ JL TRANDUC H ROSSEL P CHARITAT G BEHRENS FH
Citation: Jl. Sanchez et al., SUBTHRESHOLD LATCH-UP IN MOS THYRISTOR AN D MCT DEVICES, Journal de physique. III, 5(1), 1995, pp. 11-32
PERFORMANCE OF SIC POWER MOSFETS - ON RES ISTANCE VERSUS VOLTAGE CAPABILITY AND SWITCHING SPEED
Authors: BEYDOUN B ROSSEL P TRANDUC H CHARITAT G
Citation: B. Beydoun et al., PERFORMANCE OF SIC POWER MOSFETS - ON RES ISTANCE VERSUS VOLTAGE CAPABILITY AND SWITCHING SPEED, Journal de physique. III, 4(8), 1994, pp. 1383-1396
STUDY AND MODELING OF DYNAMIC PROPERTIES OF UHF POWER MOS-TRANSISTORS
Authors: KASSMI K ROSSEL P TRANDUC H OMS F
Citation: K. Kassmi et al., STUDY AND MODELING OF DYNAMIC PROPERTIES OF UHF POWER MOS-TRANSISTORS, Journal de physique. III, 4(3), 1994, pp. 503-529
DESIGN METHODOLOGY OF POWER MOSFET TRANSI STORS
Authors: BEYDOUN B TRANDUC H OMS F LAVIGNE AP ROSSEL P
Citation: B. Beydoun et al., DESIGN METHODOLOGY OF POWER MOSFET TRANSI STORS, Journal de physique. III, 4(10), 1994, pp. 1939-1955
POWER 2D - A DEDICATED TOOL FOR 2-DIMENSIONAL SIMULATIONS OF OFF-STATE POWER STRUCTURES
Authors: NOLHIER N STEFANOV E CHARITAT G ROSSEL P
Citation: N. Nolhier et al., POWER 2D - A DEDICATED TOOL FOR 2-DIMENSIONAL SIMULATIONS OF OFF-STATE POWER STRUCTURES, Compel, 13(4), 1994, pp. 771-783
Risultati: 1-10 |