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Results: 1-25 | 26-35
Results: 1-25/35
INTERPRETATION OF REFLECTANCE ANISOTROPY SPECTROSCOPY SPECTRA OF ZNSE(001) GROWN ON GAAS(001) IN TERMS OF BULK, INTERFACE, AND SURFACE CONTRIBUTIONS
Authors: FRISCH AM SCHULTZ C HERRMANN T EMILIANI V WOLFFRAMM D EVANS DA KORN M ROSSOW U ESSER N RICHTER W
Citation: Am. Frisch et al., INTERPRETATION OF REFLECTANCE ANISOTROPY SPECTROSCOPY SPECTRA OF ZNSE(001) GROWN ON GAAS(001) IN TERMS OF BULK, INTERFACE, AND SURFACE CONTRIBUTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2350-2354
REFLECTANCE DIFFERENCE SPECTROSCOPY SPECTRA OF CLEAN (3X2), (2X1), AND C(2X2) 3C-SIC(001) SURFACES - NEW EVIDENCE FOR SURFACE-STATE CONTRIBUTIONS TO OPTICAL ANISOTROPY SPECTRA
Authors: ROSSOW U LINDNER K LUBBE M ASPNES DE ZAHN DRT
Citation: U. Rossow et al., REFLECTANCE DIFFERENCE SPECTROSCOPY SPECTRA OF CLEAN (3X2), (2X1), AND C(2X2) 3C-SIC(001) SURFACES - NEW EVIDENCE FOR SURFACE-STATE CONTRIBUTIONS TO OPTICAL ANISOTROPY SPECTRA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2355-2357
PHOTON-INDUCED LOCALIZATION AND FINAL-STATE CORRELATION-EFFECTS IN OPTICALLY ABSORBING MATERIALS
Authors: ASPNES DE MANTESE L BELL KA ROSSOW U
Citation: De. Aspnes et al., PHOTON-INDUCED LOCALIZATION AND FINAL-STATE CORRELATION-EFFECTS IN OPTICALLY ABSORBING MATERIALS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2367-2372
LINESHAPES OF SURFACE-INDUCED OPTICAL ANISOTROPY SPECTRA MEASURED BY RDS RAS/
Authors: ROSSOW U MANTESE L ASPNES DE
Citation: U. Rossow et al., LINESHAPES OF SURFACE-INDUCED OPTICAL ANISOTROPY SPECTRA MEASURED BY RDS RAS/, Applied surface science, 123, 1998, pp. 237-242
DEPOLARIZATION MIXED POLARIZATION CORRECTIONS OF ELLIPSOMETRY SPECTRA
Authors: ROSSOW U
Citation: U. Rossow, DEPOLARIZATION MIXED POLARIZATION CORRECTIONS OF ELLIPSOMETRY SPECTRA, Thin solid films, 313, 1998, pp. 97-101
SYSTEMATIC DIFFERENCES AMONG NOMINAL REFERENCE DIELECTRIC FUNCTION SPECTRA FOR CRYSTALLINE SI AS DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY
Authors: BELL KA MANTESE L ROSSOW U ASPNES DE
Citation: Ka. Bell et al., SYSTEMATIC DIFFERENCES AMONG NOMINAL REFERENCE DIELECTRIC FUNCTION SPECTRA FOR CRYSTALLINE SI AS DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 313, 1998, pp. 161-166
INTERPRETATION OF CRITICAL-POINT ENERGY SHIFTS IN CRYSTALLINE SI BY NEAR-SURFACE LOCALIZATION OF EXCITED ELECTRONIC STATES
Authors: MANTESE L BELL KA ROSSOW U ASPNES DE
Citation: L. Mantese et al., INTERPRETATION OF CRITICAL-POINT ENERGY SHIFTS IN CRYSTALLINE SI BY NEAR-SURFACE LOCALIZATION OF EXCITED ELECTRONIC STATES, Thin solid films, 313, 1998, pp. 557-560
EVIDENCE OF NEAR-SURFACE LOCALIZATION OF EXCITED ELECTRONIC STATES INCRYSTALLINE SI
Authors: MANTESE L BELL KA ROSSOW U ASPNES DE
Citation: L. Mantese et al., EVIDENCE OF NEAR-SURFACE LOCALIZATION OF EXCITED ELECTRONIC STATES INCRYSTALLINE SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1196-1200
SURFACE AND INTERFACE EFFECTS ON ELLIPSOMETRIC SPECTRA OF CRYSTALLINESI
Authors: BELL KA MANTESE L ROSSOW U ASPNES DE
Citation: Ka. Bell et al., SURFACE AND INTERFACE EFFECTS ON ELLIPSOMETRIC SPECTRA OF CRYSTALLINESI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1205-1211
IN-SITU PHOTOEMISSION AND REFLECTANCE ANISOTROPY SPECTROSCOPY STUDIESOF CDS GROWN ON INP(001)
Authors: SCHULTZ C FRISCH AM HINRICHS K KINSKY J HERRMANN T ROSSOW U ESSER N RICHTER W
Citation: C. Schultz et al., IN-SITU PHOTOEMISSION AND REFLECTANCE ANISOTROPY SPECTROSCOPY STUDIESOF CDS GROWN ON INP(001), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1260-1264
MOLECULAR LAYER EPITAXY BY REAL-TIME OPTICAL PROCESS MONITORING
Authors: BACHMANN KJ HOPFNER C SUKIDI N MILLER AE HARRIS C ASPNES DE DIETZ NA TRAN HT BEELER S ITO K BANKS HT ROSSOW U
Citation: Kj. Bachmann et al., MOLECULAR LAYER EPITAXY BY REAL-TIME OPTICAL PROCESS MONITORING, Applied surface science, 112, 1997, pp. 38-47
HETEROEPITAXY OF GAP ON SI(100)
Authors: BACHMANN KJ ROSSOW U SUKIDI N CASTLEBERRY H DIETZ N
Citation: Kj. Bachmann et al., HETEROEPITAXY OF GAP ON SI(100), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3019-3029
OPTICAL INVESTIGATIONS OF SURFACE PROCESSES IN GAP HETEROEPITAXY ON SILICON UNDER PULSED CHEMICAL BEAM EPITAXY CONDITIONS
Authors: ROSSOW U DIETZ N BACHMANN KJ ASPNES DE
Citation: U. Rossow et al., OPTICAL INVESTIGATIONS OF SURFACE PROCESSES IN GAP HETEROEPITAXY ON SILICON UNDER PULSED CHEMICAL BEAM EPITAXY CONDITIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3040-3046
INTERPRETATION OF SURFACE-INDUCED OPTICAL ANISOTROPY OF CLEAN, HYDROGENATED, AND OXIDIZED VICINAL SILICON SURFACES INVESTIGATED BY REFLECTANCE-DIFFERENCE SPECTROSCOPY
Authors: ROSSOW U MANTESE L ASPNES DE
Citation: U. Rossow et al., INTERPRETATION OF SURFACE-INDUCED OPTICAL ANISOTROPY OF CLEAN, HYDROGENATED, AND OXIDIZED VICINAL SILICON SURFACES INVESTIGATED BY REFLECTANCE-DIFFERENCE SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3070-3074
SURFACE-INDUCED OPTICAL ANISOTROPY OF OXIDIZED, CLEAN, AND HYDROGENATED VICINAL SI(001) SURFACES
Authors: MANTESE L ROSSOW U ASPNES DE
Citation: L. Mantese et al., SURFACE-INDUCED OPTICAL ANISOTROPY OF OXIDIZED, CLEAN, AND HYDROGENATED VICINAL SI(001) SURFACES, Applied surface science, 107, 1996, pp. 35-41
HYDROGENATED AND OXIDIZED VICINAL SI(001) SURFACES INVESTIGATED BY REFLECTANCE-DIFFERENCE SPECTROSCOPY
Authors: ROSSOW U MANTESE L YASUDA T ASPNES DE
Citation: U. Rossow et al., HYDROGENATED AND OXIDIZED VICINAL SI(001) SURFACES INVESTIGATED BY REFLECTANCE-DIFFERENCE SPECTROSCOPY, Applied surface science, 104, 1996, pp. 137-140
POROUS SILICON LAYERS AS A MODEL SYSTEM FOR NANOSTRUCTURES
Authors: ROSSOW U FROTSCHER U PIETRYGA C ASPNES DE RICHTER W
Citation: U. Rossow et al., POROUS SILICON LAYERS AS A MODEL SYSTEM FOR NANOSTRUCTURES, Applied surface science, 104, 1996, pp. 552-556
REAL-TIME OPTICAL MONITORING OF HETEROEPITAXIAL GROWTH-PROCESSES ON SI UNDER PULSED CHEMICAL BEAM EPITAXY CONDITIONS
Authors: DIETZ N ROSSOW U ASPNES DE BACHMANN KJ
Citation: N. Dietz et al., REAL-TIME OPTICAL MONITORING OF HETEROEPITAXIAL GROWTH-PROCESSES ON SI UNDER PULSED CHEMICAL BEAM EPITAXY CONDITIONS, Applied surface science, 102, 1996, pp. 47-51
INTERPRETATION OF THE DIELECTRIC FUNCTION OF POROUS SILICON LAYERS
Authors: ROSSOW U FROTSCHER U PIETRYGA C RICHTER W ASPNES DE
Citation: U. Rossow et al., INTERPRETATION OF THE DIELECTRIC FUNCTION OF POROUS SILICON LAYERS, Applied surface science, 102, 1996, pp. 413-416
INVESTIGATION OF DIFFERENT OXIDATION PROCESSES FOR POROUS SILICON STUDIED BY SPECTROSCOPIC ELLIPSOMETRY
Authors: FROTSCHER U ROSSOW U EBERT M PIETRYGA C RICHTER W BERGER MG ARENSFISCHER R MUNDER H
Citation: U. Frotscher et al., INVESTIGATION OF DIFFERENT OXIDATION PROCESSES FOR POROUS SILICON STUDIED BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 276(1-2), 1996, pp. 36-39
REAL-TIME OPTICAL MONITORING OF GAXIN1-XP AND GAP HETEROEPITAXY ON SIUNDER PULSED CHEMICAL BEAM CONDITIONS
Authors: DIETZ N ROSSOW U ASPNES DE BACHMANN KJ
Citation: N. Dietz et al., REAL-TIME OPTICAL MONITORING OF GAXIN1-XP AND GAP HETEROEPITAXY ON SIUNDER PULSED CHEMICAL BEAM CONDITIONS, Journal of crystal growth, 164(1-4), 1996, pp. 34-39
DEPTH INHOMOGENEITY OF POROUS SILICON LAYERS
Authors: THONISSEN M BILLAT S KRUGER M LUTH H BERGER MG FROTSCHER U ROSSOW U
Citation: M. Thonissen et al., DEPTH INHOMOGENEITY OF POROUS SILICON LAYERS, Journal of applied physics, 80(5), 1996, pp. 2990-2993
REAL-TIME MONITORING OF HETEROEPITAXIAL GROWTH-PROCESSES ON THE SILICON(001) SURFACE BY P-POLARIZED REFLECTANCE SPECTROSCOPY
Authors: BACHMANN KJ ROSSOW U DIETZ N
Citation: Kj. Bachmann et al., REAL-TIME MONITORING OF HETEROEPITAXIAL GROWTH-PROCESSES ON THE SILICON(001) SURFACE BY P-POLARIZED REFLECTANCE SPECTROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 472-478
REAL-TIME OPTICAL MONITORING OF EPITAXIAL-GROWTH - PULSED CHEMICAL BEAM EPITAXY OF GAP AND INP HOMOEPITAXY AND HETEROEPITAXY ON SI
Authors: DIETZ N ROSSOW U ASPNES D BACHMANN KJ
Citation: N. Dietz et al., REAL-TIME OPTICAL MONITORING OF EPITAXIAL-GROWTH - PULSED CHEMICAL BEAM EPITAXY OF GAP AND INP HOMOEPITAXY AND HETEROEPITAXY ON SI, Journal of electronic materials, 24(11), 1995, pp. 1571-1576
INFLUENCE OF THE FORMATION CONDITIONS ON THE MICROSTRUCTURE OF POROUSSILICON LAYERS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY
Authors: ROSSOW U FROTSCHER U THONISSEN M BERGER MG FROHNHOFF S MUNDER H RICHTER W
Citation: U. Rossow et al., INFLUENCE OF THE FORMATION CONDITIONS ON THE MICROSTRUCTURE OF POROUSSILICON LAYERS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 255(1-2), 1995, pp. 5-8
Risultati: 1-25 | 26-35