AAAAAA

   
Results: 1-7 |
Results: 7
NITROGEN DOPING OF ZNSE WITH TRIMETHYLSILYLAZIDE, TRIALLYLAMINE OR BISDITRIMETHYLSILYLAMIDOZINC DURING METALORGANIC VAPOR-PHASE EPITAXY
Authors: TAUDT W LAMPE S SAUERLANDER F SOLLNER J HAMADEH H HEUKEN M JONES AC RUSHWORTH S OBRIEN P MALIK MA
Citation: W. Taudt et al., NITROGEN DOPING OF ZNSE WITH TRIMETHYLSILYLAZIDE, TRIALLYLAMINE OR BISDITRIMETHYLSILYLAMIDOZINC DURING METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 169(2), 1996, pp. 243-249
STRUCTURAL AND ELECTRONIC CHARACTERIZATION OF BETA-SIC FILMS ON SI GROWN FROM MONO-METHYLSILANE PRECURSORS
Authors: KROTZ G LEGNER W MULLER G GRUENINGER HW SMITH L LEESE B JONES A RUSHWORTH S
Citation: G. Krotz et al., STRUCTURAL AND ELECTRONIC CHARACTERIZATION OF BETA-SIC FILMS ON SI GROWN FROM MONO-METHYLSILANE PRECURSORS, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 154-159
'UNDRESSING'
Authors: RUSHWORTH S
Citation: S. Rushworth, 'UNDRESSING', Poetry Wales, 30(4), 1995, pp. 47-48
THE 'FERRIS WHEEL IN THE CITY'
Authors: RUSHWORTH S
Citation: S. Rushworth, THE 'FERRIS WHEEL IN THE CITY', Poetry Wales, 30(4), 1995, pp. 48-49
GROWTH OF GASB ON GAAS SUBSTRATES
Authors: GRAHAM RM JONES AC MASON NJ RUSHWORTH S SMITH L WALKER PJ
Citation: Rm. Graham et al., GROWTH OF GASB ON GAAS SUBSTRATES, Journal of crystal growth, 145(1-4), 1994, pp. 363-370
SOME COMPARISONS OF CHEMICAL BEAM EPITAXY INGAAS INP GROWTH USING TRIETHYLGALLIUM, TRIISOPROPYLGALLIUM AND TRIISOBUTYLGALLIUM SOURCES/
Authors: DAVIES GJ SKEVINGTON PJ MORRIS JC JONES AC RUSHWORTH S FOORD JS LEVOGUER CL
Citation: Gj. Davies et al., SOME COMPARISONS OF CHEMICAL BEAM EPITAXY INGAAS INP GROWTH USING TRIETHYLGALLIUM, TRIISOPROPYLGALLIUM AND TRIISOBUTYLGALLIUM SOURCES/, Journal of crystal growth, 136(1-4), 1994, pp. 133-137
IMPROVED MATERIALS FOR MOVPE GROWTH OF GASB AND INSB
Authors: GRAHAM RM JONES AC MASON NJ RUSHWORTH S SALESSE A SEONG TY BOOKER G SMITH L WALKER PJ
Citation: Rm. Graham et al., IMPROVED MATERIALS FOR MOVPE GROWTH OF GASB AND INSB, Semiconductor science and technology, 8(10), 1993, pp. 1797-1802
Risultati: 1-7 |