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Results: 1-24 |
Results: 24
STRUCTURAL CHARACTERIZATION OF SELF-ORGANIZED NANOSTRUCTURES
Authors: RUVIMOV S LILIENTALWEBER Z WASHBURN J LEDENTSOV NN USTINOV VM SHCHUKIN VA KOPEV PS ALFEROV ZI BIMBERG D
Citation: S. Ruvimov et al., STRUCTURAL CHARACTERIZATION OF SELF-ORGANIZED NANOSTRUCTURES, Physics of the solid state, 40(5), 1998, pp. 781-783
CORRELATION OF MICROSTRUCTURE WITH ELECTRICAL BEHAVIOR OF TI GAN SCHOTTKY CONTACTS/
Authors: HIRSCH MT DUXSTAD KJ HALLER EE RUVIMOV S LILIENTALWEBER Z
Citation: Mt. Hirsch et al., CORRELATION OF MICROSTRUCTURE WITH ELECTRICAL BEHAVIOR OF TI GAN SCHOTTKY CONTACTS/, Journal of electronic materials, 27(11), 1998, pp. 1236-1239
TUNABLE INTERSUBLEVEL TRANSITIONS IN SELF-FORMING SEMICONDUCTOR QUANTUM DOTS
Authors: LEON R FAFARD S PIVA PG RUVIMOV S LILIENTALWEBER Z
Citation: R. Leon et al., TUNABLE INTERSUBLEVEL TRANSITIONS IN SELF-FORMING SEMICONDUCTOR QUANTUM DOTS, Physical review. B, Condensed matter, 58(8), 1998, pp. 4262-4265
MICROSTRUCTURE OF TI AL OHMIC CONTACTS FOR N-ALGAN/
Authors: RUVIMOV S LILIENTALWEBER Z WASHBURN J QIAO D LAU SS CHU PK
Citation: S. Ruvimov et al., MICROSTRUCTURE OF TI AL OHMIC CONTACTS FOR N-ALGAN/, Applied physics letters, 73(18), 1998, pp. 2582-2584
EFFECT OF MATRIX ON INAS SELF-ORGANIZED QUANTUM DOTS ON INP SUBSTRATE
Authors: USTINOV VM WEBER ER RUVIMOV S LILIENTALWEBER Z ZHUKOV AE EGOROV AY KOVSH AR TSATSULNIKOV AF KOPEV PS
Citation: Vm. Ustinov et al., EFFECT OF MATRIX ON INAS SELF-ORGANIZED QUANTUM DOTS ON INP SUBSTRATE, Applied physics letters, 72(3), 1998, pp. 362-364
TWIN FORMATION IN AS PRECIPITATES IN LOW-TEMPERATURE GAAS DURING HIGH-TEMPERATURE ANNEALING
Authors: RUVIMOV S DICKER C WASHBURN J LILIENTALWEBER Z
Citation: S. Ruvimov et al., TWIN FORMATION IN AS PRECIPITATES IN LOW-TEMPERATURE GAAS DURING HIGH-TEMPERATURE ANNEALING, Applied physics letters, 72(2), 1998, pp. 226-228
SELF-FORMING INAS GAP QUANTUM DOTS BY DIRECT ISLAND GROWTH/
Authors: LEON R LOBO C CHIN TP WOODALL JM FAFARD S RUVIMOV S LILIENTALWEBER Z KALCEFF MAS
Citation: R. Leon et al., SELF-FORMING INAS GAP QUANTUM DOTS BY DIRECT ISLAND GROWTH/, Applied physics letters, 72(11), 1998, pp. 1356-1358
INTERFACIAL REACTION BEHAVIOR OF PT, PD, AND NI ON ZNSE
Authors: DUXSTAD KJ HALLER EE YU KM BOURRET ED LIN XW RUVIMOV S LILIENTALWEBER Z WASHBURN J
Citation: Kj. Duxstad et al., INTERFACIAL REACTION BEHAVIOR OF PT, PD, AND NI ON ZNSE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 891-898
STRUCTURAL CHARACTERIZATION OF THIN NI FILMS DEPOSITED ON (001)ZNSE
Authors: RUVIMOV S LILIENTALWEBER Z BOURRET ED SWIDER W WASHBURN J DUXSTAD KJ HALLER EE
Citation: S. Ruvimov et al., STRUCTURAL CHARACTERIZATION OF THIN NI FILMS DEPOSITED ON (001)ZNSE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 247-251
FORMATION MECHANISM OF NANOTUBES IN GAN
Authors: LILIENTALWEBER Z CHEN Y RUVIMOV S WASHBURN J
Citation: Z. Lilientalweber et al., FORMATION MECHANISM OF NANOTUBES IN GAN, Physical review letters, 79(15), 1997, pp. 2835-2838
MICROSTRUCTURE OF GAN LAYERS GROWN ON (001) GAAS BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
Authors: RUVIMOV S LILIENTALWEBER Z WASHBURN J DRUMMOND TJ HAFICH M LEE SR
Citation: S. Ruvimov et al., MICROSTRUCTURE OF GAN LAYERS GROWN ON (001) GAAS BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Applied physics letters, 71(20), 1997, pp. 2931-2933
HREM SIMULATIONS OF PARTICLES AND INTERFACES REFINED BY MOLECULAR-DYNAMICS RELAXATIONS
Authors: TIMPEL D SCHEERSCHMIDT K RUVIMOV S
Citation: D. Timpel et al., HREM SIMULATIONS OF PARTICLES AND INTERFACES REFINED BY MOLECULAR-DYNAMICS RELAXATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 101-107
STRUCTURAL CHARACTERIZATION OF BULK GAN CRYSTALS GROWN UNDER HIGH HYDROSTATIC-PRESSURE
Authors: LILIENTALWEBER Z KISIELOWSKI C RUVIMOV S CHEN Y WASHBURN J GRZEGORY I BOCKOWSKI M JUN J POROWSKI S
Citation: Z. Lilientalweber et al., STRUCTURAL CHARACTERIZATION OF BULK GAN CRYSTALS GROWN UNDER HIGH HYDROSTATIC-PRESSURE, Journal of electronic materials, 25(9), 1996, pp. 1545-1550
STRAIN-RELATED PHENOMENA IN GAN THIN-FILMS
Authors: KISIELOWSKI C KRUGER J RUVIMOV S SUSKI T AGER JW JONES E LILIENTALWEBER Z RUBIN M WEBER ER BREMSER MD DAVIS RF
Citation: C. Kisielowski et al., STRAIN-RELATED PHENOMENA IN GAN THIN-FILMS, Physical review. B, Condensed matter, 54(24), 1996, pp. 17745-17753
CHARACTERIZATION OF INTERFACE STRUCTURES IN NANOCRYSTALLINE GERMANIUMBY MEANS OF HIGH-RESOLUTION ELECTRON-MICROSCOPY AND MOLECULAR-DYNAMICS SIMULATIONS
Authors: NEUMANN W HOFMEISTER H CONRAD D SCHEERSCHMIDT K RUVIMOV S
Citation: W. Neumann et al., CHARACTERIZATION OF INTERFACE STRUCTURES IN NANOCRYSTALLINE GERMANIUMBY MEANS OF HIGH-RESOLUTION ELECTRON-MICROSCOPY AND MOLECULAR-DYNAMICS SIMULATIONS, Zeitschrift fur Kristallographie, 211(3), 1996, pp. 147-152
EFFECT OF SI DOPING ON THE DISLOCATION-STRUCTURE OF GAN GROWN ON THE A-FACE OF SAPPHIRE
Authors: RUVIMOV S LILIENTALWEBER Z SUSKI T AGER JW WASHBURN J KRUEGER J KISIELOWSKI C WEBER ER AMANO H AKASAKI I
Citation: S. Ruvimov et al., EFFECT OF SI DOPING ON THE DISLOCATION-STRUCTURE OF GAN GROWN ON THE A-FACE OF SAPPHIRE, Applied physics letters, 69(7), 1996, pp. 990-992
MICROSTRUCTURE OF TI AL AND TI/AL/NI/AU OHMIC CONTACTS FOR N-GAN/
Authors: RUVIMOV S LILIENTALWEBER Z WASHBURN J DUXSTAD KJ HALLER EE FAN ZF MOHAMMAD SN KIM W BOTCHKAREV AE MORKOC H
Citation: S. Ruvimov et al., MICROSTRUCTURE OF TI AL AND TI/AL/NI/AU OHMIC CONTACTS FOR N-GAN/, Applied physics letters, 69(11), 1996, pp. 1556-1558
NUCLEATION AND EVOLUTION OF MISFIT DISLOCATIONS IN ZNSE GAAS(001) HETEROSTRUCTURES GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY/
Authors: RUVIMOV S BOURRET ED WASHBURN J LILIENTALWEBER Z
Citation: S. Ruvimov et al., NUCLEATION AND EVOLUTION OF MISFIT DISLOCATIONS IN ZNSE GAAS(001) HETEROSTRUCTURES GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY/, Applied physics letters, 68(3), 1996, pp. 346-348
STRUCTURAL CHARACTERIZATION OF (IN,GA)AS QUANTUM DOTS IN A GAAS MATRIX
Authors: RUVIMOV S WERNER P SCHEERSCHMIDT K GOSELE U HEYDENREICH J RICHTER U LEDENTSOV NN GRUNDMANN M BIMBERG D USTINOV VM EGOROV AY KOPEV PS ALFEROV ZI
Citation: S. Ruvimov et al., STRUCTURAL CHARACTERIZATION OF (IN,GA)AS QUANTUM DOTS IN A GAAS MATRIX, Physical review. B, Condensed matter, 51(20), 1995, pp. 14766-14769
TEM HREM VISUALIZATION OF NM-SCALE COHERENT INAS ISLANDS (QUANTUM DOTS) IN A GAAS MATRIX/
Authors: RUVIMOV S SCHEERSCHMIDT K
Citation: S. Ruvimov et K. Scheerschmidt, TEM HREM VISUALIZATION OF NM-SCALE COHERENT INAS ISLANDS (QUANTUM DOTS) IN A GAAS MATRIX/, Physica status solidi. a, Applied research, 150(1), 1995, pp. 471-478
HREM STRUCTURE CHARACTERIZATION OF INTERFACES IN SEMICONDUCTING MULTILAYERS USING MOLECULAR-DYNAMICS-SUPPORTED IMAGE INTERPRETATION
Authors: SCHEERSCHMIDT K RUVIMOV S WERNER P HOPNER A HEYDENREICH J
Citation: K. Scheerschmidt et al., HREM STRUCTURE CHARACTERIZATION OF INTERFACES IN SEMICONDUCTING MULTILAYERS USING MOLECULAR-DYNAMICS-SUPPORTED IMAGE INTERPRETATION, Journal of Microscopy, 179, 1995, pp. 214-228
STRAIN-STABILIZED STRUCTURES ON SILICON GROWN WITH MBE
Authors: OSTEN HJ RUCKER H METHFESSEL M BUGIEL E RUVIMOV S LIPPERT G
Citation: Hj. Osten et al., STRAIN-STABILIZED STRUCTURES ON SILICON GROWN WITH MBE, Journal of crystal growth, 157(1-4), 1995, pp. 405-409
STRUCTURAL CHARACTERIZATION OF SINC DELTA-LAYERS EMBEDDED IN A SILICON MATRIX
Authors: RUVIMOV S BUGIEL E OSTEN HJ
Citation: S. Ruvimov et al., STRUCTURAL CHARACTERIZATION OF SINC DELTA-LAYERS EMBEDDED IN A SILICON MATRIX, Journal of applied physics, 78(4), 1995, pp. 2323-2327
TEM STUDY OF THE RAPID DEGRADATION OF PUMP LASER-DIODES
Authors: RUVIMOV S KLEIN A RICHTER U RECHENBERG I SCHEERSCHMIDT K HEYDENREICH J
Citation: S. Ruvimov et al., TEM STUDY OF THE RAPID DEGRADATION OF PUMP LASER-DIODES, Physica status solidi. a, Applied research, 146(1), 1994, pp. 415-424
Risultati: 1-24 |