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Results: 1-10 |
Results: 10
SURFACE DOPANT CONCENTRATION MONITORING USING NONCONTACT SURFACE-CHARGE PROFILING
Authors: ROMAN P STAFFA J FAKHOURI S BRUBAKER M RUZYLLO J TOREK K KAMIENIECKI E
Citation: P. Roman et al., SURFACE DOPANT CONCENTRATION MONITORING USING NONCONTACT SURFACE-CHARGE PROFILING, Journal of applied physics, 83(4), 1998, pp. 2297-2300
REDUCED PRESSURE ETCHING OF THERMAL OXIDES IN ANHYDROUS HF ALCOHOLIC GAS-MIXTURES/
Authors: TOREK K RUZYLLO J GRANT R NOVAK R
Citation: K. Torek et al., REDUCED PRESSURE ETCHING OF THERMAL OXIDES IN ANHYDROUS HF ALCOHOLIC GAS-MIXTURES/, Journal of the Electrochemical Society, 142(4), 1995, pp. 1322-1326
IN-SITU VAPOR-PHASE PREGATE OXIDE CLEANING AND ITS EFFECTS ON METAL-OXIDE-SEMICONDUCTOR DEVICE CHARACTERISTICS
Authors: MA Y GREEN ML TOREK K RUZYLLO J OPILA R KONSTADINIDIS K SICONOLFI D BRASEN D
Citation: Y. Ma et al., IN-SITU VAPOR-PHASE PREGATE OXIDE CLEANING AND ITS EFFECTS ON METAL-OXIDE-SEMICONDUCTOR DEVICE CHARACTERISTICS, Journal of the Electrochemical Society, 142(11), 1995, pp. 217-219
TEMPERATURE-DEPENDENCE OF THE ETCH RATE AND SELECTIVITY OF SILICON-NITRIDE OVER SILICON DIOXIDE IN REMOTE PLASMA NF3 CL-2/
Authors: STAFFA J HWANG D LUTHER B RUZYLLO J GRANT R
Citation: J. Staffa et al., TEMPERATURE-DEPENDENCE OF THE ETCH RATE AND SELECTIVITY OF SILICON-NITRIDE OVER SILICON DIOXIDE IN REMOTE PLASMA NF3 CL-2/, Applied physics letters, 67(13), 1995, pp. 1902-1904
DAMAGE TO SI SUBSTRATES DURING SIO2 ETCHING - A COMPARISON OF REACTIVE ION ETCHING AND MAGNETRON-ENHANCED REACTIVE ION ETCHING
Authors: GU T DITIZIO RA FONASH SJ AWADELKARIM OO RUZYLLO J COLLINS RW LEARY HJ
Citation: T. Gu et al., DAMAGE TO SI SUBSTRATES DURING SIO2 ETCHING - A COMPARISON OF REACTIVE ION ETCHING AND MAGNETRON-ENHANCED REACTIVE ION ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 567-573
EVALUATION OF NEW HIGH-TEMPERATURE BORON SOLID PLANAR DIFFUSION SOURCES THROUGH P-N JUNCTION CHARACTERIZATION
Authors: HWANG DK TRESSLER RE RUZYLLO J
Citation: Dk. Hwang et al., EVALUATION OF NEW HIGH-TEMPERATURE BORON SOLID PLANAR DIFFUSION SOURCES THROUGH P-N JUNCTION CHARACTERIZATION, Thin solid films, 250(1-2), 1994, pp. 16-19
METAL-OXIDE SEMICONDUCTOR CHARACTERIZATION OF SILICON SURFACES THERMALLY OXIDIZED AFTER REACTIVE ION ETCHING AND MAGNETICALLY ENHANCED REACTIVE ION ETCHING
Authors: SETTLEMYER KT RUZYLLO J HWANG DK LEARY HJ
Citation: Kt. Settlemyer et al., METAL-OXIDE SEMICONDUCTOR CHARACTERIZATION OF SILICON SURFACES THERMALLY OXIDIZED AFTER REACTIVE ION ETCHING AND MAGNETICALLY ENHANCED REACTIVE ION ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 249-252
EFFECT OF CARBON ON THERMAL-OXIDATION OF SILICON AND ELECTRICAL-PROPERTIES OF SIO2-SI STRUCTURES
Authors: BECK RB BROZEK T RUZYLLO J HOSSAIN SD TRESSLER RE
Citation: Rb. Beck et al., EFFECT OF CARBON ON THERMAL-OXIDATION OF SILICON AND ELECTRICAL-PROPERTIES OF SIO2-SI STRUCTURES, Journal of electronic materials, 22(6), 1993, pp. 689-694
ETCHING OF THERMAL OXIDES IN LOW-PRESSURE ANHYDROUS HF CH3OH GAS-MIXTURE AT ELEVATED-TEMPERATURE/
Authors: RUZYLLO J TOREK K DAFFRON C GRANT R NOVAK R
Citation: J. Ruzyllo et al., ETCHING OF THERMAL OXIDES IN LOW-PRESSURE ANHYDROUS HF CH3OH GAS-MIXTURE AT ELEVATED-TEMPERATURE/, Journal of the Electrochemical Society, 140(4), 1993, pp. 64-66
NEARLY ISOTROPIC ETCHING OF 6H-SIC IN NF3 AND O2 USING A REMOTE PLASMA
Authors: LUTHER BP RUZYLLO J MILLER DL
Citation: Bp. Luther et al., NEARLY ISOTROPIC ETCHING OF 6H-SIC IN NF3 AND O2 USING A REMOTE PLASMA, Applied physics letters, 63(2), 1993, pp. 171-173
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