AAAAAA

   
Results: 1-25 | 26-50 | 51-75 | 76-79
Results: 1-25/79

Authors: SCHNUPP R KUHNHOLD R TEMMEL G BURTE E RYSSEL H
Citation: R. Schnupp et al., THIN CARBON-FILMS AS ELECTRODES FOR BIOELECTRONIC APPLICATIONS, Biosensors & bioelectronics, 13(7-8), 1998, pp. 889-894

Authors: KAL S KASKO I RYSSEL H
Citation: S. Kal et al., NONCONTACTING MEASUREMENT OF THICKNESS OF THIN TITANIUM SILICIDE FILMS USING SPECTROSCOPIC ELLIPSOMETER, IEEE electron device letters, 19(4), 1998, pp. 127-130

Authors: SVORCIK V ARENHOLZ E HNATOWICZ V RYBKA V OCHSNER R RYSSEL H
Citation: V. Svorcik et al., AFM SURFACE INVESTIGATION OF POLYETHYLENE MODIFIED BY ION-BOMBARDMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 142(3), 1998, pp. 349-354

Authors: PARK YK TAKAI M NAGAI T KISHIMOTO T SEIDL A LEHRER C FREY L RYSSEL H
Citation: Yk. Park et al., MICROANALYSIS OF MASKLESSLY FABRICATED MICROSTRUCTURES USING NUCLEAR MICROPROBE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 373-378

Authors: TAKAI M KISHIMOTO T MORIMOTO H PARK YK LIPP S LEHRER C FREY L RYSSEL H HOSONO A KAWABUCHI S
Citation: M. Takai et al., FABRICATION OF FIELD EMITTER ARRAY USING FOCUSED ION AND ELECTRON-BEAM-INDUCED REACTION, Microelectronic engineering, 42, 1998, pp. 453-456

Authors: PETRIK P BIRO LP FRIED M LOHNER T BERGER R SCHNEIDER C GYULAI J RYSSEL H
Citation: P. Petrik et al., COMPARATIVE-STUDY OF SURFACE-ROUGHNESS MEASURED ON POLYSILICON USING SPECTROSCOPIC ELLIPSOMETRY AND ATOMIC-FORCE MICROSCOPY, Thin solid films, 315(1-2), 1998, pp. 186-191

Authors: LOHNER T KHANH NQ PETRIK P BIRO LP FRIED M PINTER I LEHNERT W FREY L RYSSEL H WENTINK DJ GYULAI J
Citation: T. Lohner et al., SURFACE DISORDER PRODUCTION DURING PLASMA IMMERSION IMPLANTATION, Thin solid films, 313, 1998, pp. 254-258

Authors: PETRIK P FRIED M LOHNER T BERGER R BIRO LP SCHNEIDER C GYULAI J RYSSEL H
Citation: P. Petrik et al., COMPARATIVE-STUDY OF POLYSILICON-ON-OXIDE USING SPECTROSCOPIC ELLIPSOMETRY, ATOMIC-FORCE MICROSCOPY, AND TRANSMISSION ELECTRON-MICROSCOPY, Thin solid films, 313, 1998, pp. 259-263

Authors: LEHNERT W BERGER R SCHNEIDER C PFITZNER L RYSSEL H STEHLE JL PIEL JP NEUMANN W
Citation: W. Lehnert et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRY FOR ADVANCED PROCESS-CONTROL IN VERTICAL FURNACES, Thin solid films, 313, 1998, pp. 442-445

Authors: BAR E LORENZ J RYSSEL H
Citation: E. Bar et al., EXPERIMENTAL-VERIFICATION OF 3-DIMENSIONAL SIMULATIONS OF LTO LAYER DEPOSITION ON STRUCTURES PREPARED BY ANISOTROPIC WET ETCHING OF SILICON, Microelectronics and reliability, 38(2), 1998, pp. 287-291

Authors: BAR E LORENZ J RYSSEL H
Citation: E. Bar et al., 3-DIMENSIONAL SIMULATION OF LAYER DEPOSITION, Microelectronics, 29(11), 1998, pp. 799-804

Authors: TREU M BURTE EP SCHORNER R FRIEDRICHS P STEPHANI D RYSSEL H
Citation: M. Treu et al., RELIABILITY OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS ON NITROGEN-IMPLANTED 4H-SILICON CARBIDE, Journal of applied physics, 84(5), 1998, pp. 2943-2948

Authors: LIST S RYSSEL H
Citation: S. List et H. Ryssel, ATOMISTIC ANALYSIS OF THE VACANCY MECHANISM OF IMPURITY DIFFUSION IN SILICON, Journal of applied physics, 83(12), 1998, pp. 7585-7594

Authors: LIST S RYSSEL H
Citation: S. List et H. Ryssel, ATOMISTIC MODELING OF HIGH-CONCENTRATION EFFECTS OF IMPURITY DIFFUSION IN SILICON, Journal of applied physics, 83(12), 1998, pp. 7595-7607

Authors: PARK YK TAKAI M NAGAI T KISHIMOTO T LEHRER C FREY L RYSSEL H
Citation: Yk. Park et al., MICROANALYSIS OF IMPURITY CONTAMINATION IN MASKLESSLY ETCHED AREA USING FOCUSED ION-BEAM, JPN J A P 1, 36(12B), 1997, pp. 7712-7716

Authors: MIKOLAJICK T HAUBLEIN V RYSSEL H
Citation: T. Mikolajick et al., THE EFFECT OF RANDOM DOPANT FLUCTUATIONS ON THE MINIMUM CHANNEL-LENGTH OF SHORT-CHANNEL MOS-TRANSISTORS, Applied physics A: Materials science & processing, 64(6), 1997, pp. 555-560

Authors: MIKOLAJICK T KUHNHOLD R RYSSEL H
Citation: T. Mikolajick et al., THE PH-SENSING PROPERTIES OF TANTALUM PENTOXIDE FILMS FABRICATED BY METAL-ORGANIC LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Sensors and actuators. B, Chemical, 44(1-3), 1997, pp. 262-267

Authors: PANEVA R TEMMEL G BURTE E RYSSEL H
Citation: R. Paneva et al., MICROMECHANICAL ULTRASONIC LIQUID NEBULIZER, Sensors and actuators. A, Physical, 62(1-3), 1997, pp. 765-767

Authors: PARK YK PASZTI F TAKAI M TEMMEL G BUERTE EP RYSSEL H WIGET R KINOMURA A HORINO Y FUJII K
Citation: Yk. Park et al., IR AND RH SILICIDE FORMATION INVESTIGATED BY MICROPROBE RBS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 728-733

Authors: BIRO LP GYULAI J HAVANCSAK K DIDYK AY FREY L RYSSEL H
Citation: Lp. Biro et al., IN-DEPTH DAMAGE DISTRIBUTION BY SCANNING PROBE METHODS IN TARGETS IRRADIATED WITH 200 MEV IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 32-37

Authors: BIRO LP GYULAI J HAVANCSAK K DIDYK AY BOGEN S FREY L RYSSEL H
Citation: Lp. Biro et al., NEW METHOD BASED ON ATOMIC-FORCE MICROSCOPY FOR IN-DEPTH CHARACTERIZATION OF DAMAGE IN SI IRRADIATED WITH 209 MEV KR, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(3), 1997, pp. 559-562

Authors: BAR E LORENZ J RYSSEL H
Citation: E. Bar et al., 3D SIMULATION OF SPUTTER-DEPOSITION OF TITANIUM LAYERS IN CONTACT HOLES WITH HIGH ASPECT RATIOS, Microelectronic engineering, 37-8(1-4), 1997, pp. 389-395

Authors: KASKO I KAL S RYSSEL H
Citation: I. Kasko et al., CHARACTERIZATION OF THIN TISI2 FILMS BY SPECTROSCOPIC ELLIPSOMETRY AND THERMAL-WAVE ANALYSIS, Microelectronic engineering, 37-8(1-4), 1997, pp. 455-460

Authors: BAR E LORENZ J RYSSEL H
Citation: E. Bar et al., 3D SIMULATION FOR SUBMICRON METALLIZATION, Microelectronic engineering, 33(1-4), 1997, pp. 397-405

Authors: BAUER AJ BURTE EP RYSSEL H
Citation: Aj. Bauer et al., CHARACTERIZATION OF ULTRATHIN ON STACKED LAYERS CONSISTING OF THERMALLY GROWN BOTTOM OXIDE AND DEPOSITED SILICON-NITRIDE, Solid-state electronics, 41(7), 1997, pp. 1057-1065
Risultati: 1-25 | 26-50 | 51-75 | 76-79