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Results:
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Results: 20
Authors:
Zhu, HJ
Ramsteiner, M
Kostial, H
Wassermeier, M
Schonherr, HP
Ploog, KH
Citation: Hj. Zhu et al., Room-temperature spin injection from Fe into GaAs - art. no. 016601, PHYS REV L, 8701(1), 2001, pp. 6601-NIL_107
Authors:
Waltereit, P
Brandt, O
Ramsteiner, M
Trampert, A
Grahn, HT
Menniger, J
Reiche, M
Ploog, KH
Citation: P. Waltereit et al., M-plane GaN(1(1)over-bar-00) grown on gamma-LiAlO2(100): nitride semiconductors free of internal electrostatic fields, J CRYST GR, 227, 2001, pp. 437-441
Authors:
Giehler, M
Ramsteiner, M
Waltereit, P
Brandt, O
Ploog, KH
Obloh, H
Citation: M. Giehler et al., Influence of heteroepitaxy on the width and frequency of the E-2 (high)-phonon line in GaN studied by Raman spectroscopy, J APPL PHYS, 89(7), 2001, pp. 3634-3641
Authors:
Ramsteiner, M
Zhu, HJ
Daweritz, L
Citation: M. Ramsteiner et al., Patterning of epitaxial MnAs on GaAs by direct optical writing, APPL PHYS L, 79(15), 2001, pp. 2411-2413
Authors:
Ma, WQ
Notzel, R
Trampert, A
Ramsteiner, M
Zhu, HJ
Schonherr, HP
Ploog, KH
Citation: Wq. Ma et al., Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100), APPL PHYS L, 78(9), 2001, pp. 1297-1299
Authors:
Hilpert, U
Schreiber, J
Worschech, L
Horing, L
Ramsteiner, M
Ossau, W
Landwehr, G
Citation: U. Hilpert et al., Optical characterization of isolated Se(g)-type misfit dislocations and their influence on strain relief in thin ZnSe films, J PHYS-COND, 12(49), 2000, pp. 10169-10174
Authors:
Zhu, HJ
Ramsteiner, M
Ploog, KH
Zhang, R
Tsui, R
Shiralagi, K
Goronkin, H
Citation: Hj. Zhu et al., Anisotropy of electronic wave functions in self-aligned InAs dots on GaAs(001) studied by magnetic-field-dependent photoluminescence spectroscopy, PHYS REV B, 62(24), 2000, pp. R16314-R16317
Authors:
Waltereit, P
Brandt, O
Ramsteiner, M
Trampert, A
Grahn, HT
Menniger, J
Reiche, M
Uecker, R
Reiche, P
Ploog, KH
Citation: P. Waltereit et al., Growth of M-plane GaN(1(1)over-bar-00): A way to evade electrical polarization in nitrides, PHYS ST S-A, 180(1), 2000, pp. 133-138
Authors:
Waltereit, P
Brandt, O
Trampert, A
Grahn, HT
Menniger, J
Ramsteiner, M
Reiche, M
Ploog, KH
Citation: P. Waltereit et al., Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes, NATURE, 406(6798), 2000, pp. 865-868
Authors:
Waltereit, P
Brandt, O
Ramsteiner, M
Uecker, R
Reiche, P
Ploog, KH
Citation: P. Waltereit et al., Growth of M-plane GaN(1(1)over-bar-00) on gamma-LiAlO2(100), J CRYST GR, 218(2-4), 2000, pp. 143-147
Authors:
Jin, SR
Ramsteiner, M
Grahn, HT
Ploog, KH
Zhu, ZQ
Shen, DX
Li, AZ
Metev, P
Guido, LJ
Citation: Sr. Jin et al., Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition, J CRYST GR, 212(1-2), 2000, pp. 56-60
Authors:
Jin, SR
Ramsteiner, M
Grahn, HT
Ploog, KH
Li, ZH
Shen, DX
Zhu, ZQ
Citation: Sr. Jin et al., Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures, J APPL PHYS, 88(7), 2000, pp. 4075-4078
Authors:
Rau, B
Waltereit, P
Brandt, O
Ramsteiner, M
Ploog, KH
Puls, J
Henneberger, F
Citation: B. Rau et al., In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wells, APPL PHYS L, 77(21), 2000, pp. 3343-3345
Authors:
Santos, PV
Ramsteiner, M
Hey, R
Citation: Pv. Santos et al., Spatially resolved photoluminescence in quantum wells with surface acoustic waves, PHYS ST S-B, 215(1), 1999, pp. 253-256
Authors:
Santos, PV
Ramsteiner, M
Jungnickel, F
Hey, R
Citation: Pv. Santos et al., Photoluminescence in GaAs-based quantum well structures with surface acoustic waves, PHYS ST S-A, 173(1), 1999, pp. 269-273
Authors:
Richter, A
Suptitz, M
Lienau, C
Elsaesser, T
Ramsteiner, M
Notzel, R
Ploog, KH
Citation: A. Richter et al., Time-resolved near-field optics: exciton transport in semiconductor nanostructures, J MICROSC O, 194, 1999, pp. 393-400
Authors:
Fricke, J
Notzel, R
Jahn, U
Niu, ZC
Schonherr, HP
Ramsteiner, M
Ploog, KH
Citation: J. Fricke et al., Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures, J APPL PHYS, 86(5), 1999, pp. 2896-2900
Authors:
Ma, WQ
Notzel, R
Ramsteiner, M
Jahn, U
Schonherr, HP
Kostial, H
Ploog, KH
Citation: Wq. Ma et al., Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates, APPL PHYS L, 75(13), 1999, pp. 1836-1838
Authors:
Waltereit, P
Brandt, O
Trampert, A
Ramsteiner, M
Reiche, M
Qi, M
Ploog, KH
Citation: P. Waltereit et al., Influence of AlN nucleation layers on growth mode and strain relief of GaNgrown on 6H-SiC(0001), APPL PHYS L, 74(24), 1999, pp. 3660-3662
Authors:
Jiang, DS
Ramsteiner, M
Ploog, K
Tews, H
Graber, A
Riechert, H
Citation: Ds. Jiang et al., Raman scattering and photoluminescence properties of MBE-grown GaN on sapphire, RADIAT EFF, 146(1-4), 1998, pp. 99-111
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