AAAAAA

   
Results: 1-11 |
Results: 11
Mapping of mechanical, thermomechanical and wire-bond strain fields in packaged Si integrated circuits using synchrotron white beam x-ray topography
Authors: McNally, PJ Rantamaki, R Tuomi, T Danilewsky, AN Lowney, D Curley, JW Herbert, PAF
Citation: Pj. Mcnally et al., Mapping of mechanical, thermomechanical and wire-bond strain fields in packaged Si integrated circuits using synchrotron white beam x-ray topography, IEEE T COMP, 24(1), 2001, pp. 76-83
Examination of the structural and optical failure of ultra-bright LEDs under varying degrees of electrical stress using synchrotron X-ray topography and optical emission spectroscopy
Authors: Lowney, D McNally, PJ O'Hare, M Herbert, PAF Tuomi, T Rantamaki, R Karilahti, M Danilewsky, AN
Citation: D. Lowney et al., Examination of the structural and optical failure of ultra-bright LEDs under varying degrees of electrical stress using synchrotron X-ray topography and optical emission spectroscopy, J MAT S-M E, 12(4-6), 2001, pp. 249-253
Quality assessment of sapphire wafers for X-ray crystal optics using whitebeam Synchrotron X-Ray Topography
Authors: Chen, WM McNally, PJ Shvydko, YV Tuomi, T Lerche, M Danilewsky, AN Kanatharana, J Lowney, D O'Hare, M Knuuttila, L Riikonen, J Rantamaki, R
Citation: Wm. Chen et al., Quality assessment of sapphire wafers for X-ray crystal optics using whitebeam Synchrotron X-Ray Topography, PHYS ST S-A, 186(3), 2001, pp. 365-371
Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography
Authors: McNally, PJ Tuomi, T Lowney, D Jacobs, K Danilewsky, AN Rantamaki, R O'Hare, M Considine, L
Citation: Pj. Mcnally et al., Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography, PHYS ST S-A, 185(2), 2001, pp. 373-382
Dynamical diffraction imaging of voids in nearly perfect silicon
Authors: Tuomi, T Rantamaki, R McNally, PJ Lowney, D Danilewsky, AN Becker, P
Citation: T. Tuomi et al., Dynamical diffraction imaging of voids in nearly perfect silicon, J PHYS D, 34(10A), 2001, pp. A133-A135
Observation of misfit dislocation strain-induced surface features for a Si/Ge-Si heterostructure using total reflection X-ray topography
Authors: McNally, PJ Dilliway, G Bonar, JM Willoughby, A Tuomi, T Rantamaki, R Danilewsky, AN Lowney, D
Citation: Pj. Mcnally et al., Observation of misfit dislocation strain-induced surface features for a Si/Ge-Si heterostructure using total reflection X-ray topography, PHYS ST S-A, 180(1), 2000, pp. R1-R3
On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure
Authors: McNally, PJ Dilliway, G Bonar, JM Willoughby, A Tuomi, T Rantamaki, R Danilewsky, AN Lowney, D
Citation: Pj. Mcnally et al., On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure, APPL PHYS L, 77(11), 2000, pp. 1644-1646
Monitoring of stress reduction in shallow trench isolation CMOS structuresvia synchrotron X-ray topography, electrical data and raman spectroscopy
Authors: Mcnally, PJ Curley, JW Bolt, M Reader, A Tuomi, T Rantamaki, R Danilewsky, AN DeWolf, I
Citation: Pj. Mcnally et al., Monitoring of stress reduction in shallow trench isolation CMOS structuresvia synchrotron X-ray topography, electrical data and raman spectroscopy, J MAT S-M E, 10(5-6), 1999, pp. 351-358
The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography
Authors: McNally, PJ Danilewsky, AN Curley, JW Reader, A Rantamaki, R Tuomi, T Bolt, M Taskinen, M
Citation: Pj. Mcnally et al., The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography, MICROEL ENG, 45(1), 1999, pp. 47-56
Synchrotron x-ray topography analysis of GaAs layers grown on GaAs substrates by liquid phase epitaxial lateral overgrowth
Authors: Rantamaki, R Tuomi, T Zytkiewicz, ZR Dobosz, D McNally, PJ
Citation: R. Rantamaki et al., Synchrotron x-ray topography analysis of GaAs layers grown on GaAs substrates by liquid phase epitaxial lateral overgrowth, J PHYS D, 32(10A), 1999, pp. A114-A118
Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers
Authors: Rantamaki, R Tuomi, T Zytkiewicz, ZR Domagala, J McNally, PJ Danilewsky, AN
Citation: R. Rantamaki et al., Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers, J APPL PHYS, 86(8), 1999, pp. 4298-4303
Risultati: 1-11 |