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Results: 1-9 |
Results: 9
Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization
Authors: Pichon, L Mourgues, K Raoult, F Mohammed-Brahim, T Kis-Sion, K Briand, D Bonnaud, O
Citation: L. Pichon et al., Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization, SEMIC SCI T, 16(11), 2001, pp. 918-924
All-optical programmable shaping of narrow-band nanosecond pulses with picosecond accuracy by use of adapted chirps and quadratic nonlinearities
Authors: Ribeyre, X Rouyer, C Raoult, F Husson, D Sauteret, C Migus, A
Citation: X. Ribeyre et al., All-optical programmable shaping of narrow-band nanosecond pulses with picosecond accuracy by use of adapted chirps and quadratic nonlinearities, OPTICS LETT, 26(15), 2001, pp. 1173-1175
High mobility thin film transistors by Nd : YVO4-laser crystallization
Authors: Helen, Y Dassow, R Nerding, M Mourgues, K Raoult, F Kohler, JR Mohammed-Brahim, T Rogel, R Bonnaud, O Werner, JH Strunk, HP
Citation: Y. Helen et al., High mobility thin film transistors by Nd : YVO4-laser crystallization, THIN SOL FI, 383(1-2), 2001, pp. 143-146
Stability of polysilicon thin film transistors under switch operating
Authors: Toutah, H Llibre, JF Tala-Ighil, B Mohammed-Brahim, T Mourgues, K Helen, Y Raoult, F Bonnaud, O
Citation: H. Toutah et al., Stability of polysilicon thin film transistors under switch operating, MICROEL REL, 40(8-10), 2000, pp. 1573-1577
Ultrashort, intense ultraviolet pulse generation by efficient frequency tripling and adapted phase matching
Authors: Raoult, F Boscheron, ACL Husson, D Rouyer, C Sauteret, C Migus, A
Citation: F. Raoult et al., Ultrashort, intense ultraviolet pulse generation by efficient frequency tripling and adapted phase matching, OPTICS LETT, 24(5), 1999, pp. 354-356
State creation induced by gate bias stress in unhydrogenated polysilicon TFTs
Authors: Tala-Ighil, B Rahal, A Mourgues, K Toutah, A Pichon, L Mohammed-Brahim, T Raoult, F Bonnaud, O
Citation: B. Tala-ighil et al., State creation induced by gate bias stress in unhydrogenated polysilicon TFTs, THIN SOL FI, 337(1-2), 1999, pp. 101-104
Single shot excimer laser crystallization and LPCVD silicon TFTs
Authors: Helen, Y Mourgues, K Raoult, F Mohammed-Brahim, T Bonnaud, O Rogel, R Prochasson, S Boher, P Zahorski, D
Citation: Y. Helen et al., Single shot excimer laser crystallization and LPCVD silicon TFTs, THIN SOL FI, 337(1-2), 1999, pp. 133-136
Ageing of laser crystallized and unhydrogenated polysilicon thin film transistors
Authors: Rahal, A Mohammed-Brahim, T Toutah, H Tala-Ighil, B Helen, Y Prat, C Raoult, F
Citation: A. Rahal et al., Ageing of laser crystallized and unhydrogenated polysilicon thin film transistors, MICROEL REL, 39(6-7), 1999, pp. 851-855
C(V) characterization of metal/polysilicon/oxide/monosilicon structure
Authors: Dib, H Benamara, Z Boudissa, A Zebentout, B Naoum, R Raoult, F
Citation: H. Dib et al., C(V) characterization of metal/polysilicon/oxide/monosilicon structure, MICROELEC J, 30(7), 1999, pp. 679-683
Risultati: 1-9 |