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Results:
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Results: 4
Group III-V impurities in beta-SiC: lattice distortions and solubility
Authors:
Reshanov, SA Parfenova, II Rastegaev, VP
Citation:
Sa. Reshanov et al., Group III-V impurities in beta-SiC: lattice distortions and solubility, DIAM RELAT, 10(3-7), 2001, pp. 1278-1282
Photoconductivity of semi-insulating SiC : < V,Al >
Authors:
Reshanov, SA Rastegaev, VP
Citation:
Sa. Reshanov et Vp. Rastegaev, Photoconductivity of semi-insulating SiC : < V,Al >, DIAM RELAT, 10(11), 2001, pp. 2035-2038
Features of SiC single-crystals grown in vacuum using the LETI method
Authors:
Rastegaev, VP Avrov, DD Reshanov, SA Lebedev, AO
Citation:
Vp. Rastegaev et al., Features of SiC single-crystals grown in vacuum using the LETI method, MAT SCI E B, 61-2, 1999, pp. 77-81
The analysis of mass transfer in system beta-SiC-alpha-SiC under silicon carbide sublimation growth
Authors:
Avrov, DD Bakin, AS Dorozhkin, SI Rastegaev, VP Tairov, YM
Citation:
Dd. Avrov et al., The analysis of mass transfer in system beta-SiC-alpha-SiC under silicon carbide sublimation growth, J CRYST GR, 199, 1999, pp. 1011-1014
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