ACNP - Italian Periodicals Catalogue

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Results: 1-14 |

Results: 14

Application of a parallel DSMC technique to predict flow characteristics in microfluidic filters

Authors: Aktas, O Aluru, NR Ravaioli, U

Citation: O. Aktas et al., Application of a parallel DSMC technique to predict flow characteristics in microfluidic filters, J MICROEL S, 10(4), 2001, pp. 538-549

Particle Monte Carlo simulation of quantum phenomena in semiconductor nanostructures

Authors: Tsuchiya, H Ravaioli, U

Citation: H. Tsuchiya et U. Ravaioli, Particle Monte Carlo simulation of quantum phenomena in semiconductor nanostructures, J APPL PHYS, 89(7), 2001, pp. 4023-4029

Semiconductor transport simulation with the local iterative Monte Carlo technique

Authors: Jakumeit, J Ravaioli, U

Citation: J. Jakumeit et U. Ravaioli, Semiconductor transport simulation with the local iterative Monte Carlo technique, IEEE DEVICE, 48(5), 2001, pp. 946-955

Local iterative Monte Carlo analysis of electron-electron interaction in short-channel Si-MOSFETs

Authors: Mietzner, T Jakumeit, J Ravaioli, U

Citation: T. Mietzner et al., Local iterative Monte Carlo analysis of electron-electron interaction in short-channel Si-MOSFETs, IEEE DEVICE, 48(10), 2001, pp. 2323-2330

A meshless method for the numerical solution of the 2-and 3-D semiconductor Poisson equation

Authors: Wordelman, CJ Aluru, NR Ravaioli, U

Citation: Cj. Wordelman et al., A meshless method for the numerical solution of the 2-and 3-D semiconductor Poisson equation, CMES-COMP M, 1(1), 2000, pp. 121-126

Monte Carlo simulation for ultra-sound MOS devices

Authors: Ravaioli, U Winstead, B Wordelman, C Kepkep, A

Citation: U. Ravaioli et al., Monte Carlo simulation for ultra-sound MOS devices, SUPERLATT M, 27(2-3), 2000, pp. 137-145

Computational issues in the simulation of semiconductor quantum wires

Authors: Trellakis, A Ravaioli, U

Citation: A. Trellakis et U. Ravaioli, Computational issues in the simulation of semiconductor quantum wires, COMPUT METH, 181(4), 2000, pp. 437-449

Simulation of Schottky barrier MOSFET's with a coupled quantum injection/Monte Carlo technique

Authors: Winstead, B Ravaioli, U

Citation: B. Winstead et U. Ravaioli, Simulation of Schottky barrier MOSFET's with a coupled quantum injection/Monte Carlo technique, IEEE DEVICE, 47(6), 2000, pp. 1241-1246

Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices

Authors: Wordelman, CJ Ravaioli, U

Citation: Cj. Wordelman et U. Ravaioli, Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices, IEEE DEVICE, 47(2), 2000, pp. 410-416

Theory of channel hot-carrier degradation in MOSFETs

Authors: Hess, K Register, LF McMahon, W Tuttle, B Aktas, O Ravaioli, U Lyding, JW Kizilyalli, IC

Citation: K. Hess et al., Theory of channel hot-carrier degradation in MOSFETs, PHYSICA B, 272(1-4), 1999, pp. 527-531

Link between hot electrons and interface damage in n-MOSFETs: A Monte Carlo analysis

Authors: Ravaioli, U Balasubramanian, M Aktas, O

Citation: U. Ravaioli et al., Link between hot electrons and interface damage in n-MOSFETs: A Monte Carlo analysis, PHYSICA B, 272(1-4), 1999, pp. 542-545

3-D granular Monte Carlo simulation of silicon n-MOSFETs

Authors: Wordeman, CJ Ravaioli, U

Citation: Cj. Wordeman et U. Ravaioli, 3-D granular Monte Carlo simulation of silicon n-MOSFETs, PHYSICA B, 272(1-4), 1999, pp. 568-571

Lateral scalability limits of silicon conduction channels

Authors: Trellakis, A Ravaioli, U

Citation: A. Trellakis et U. Ravaioli, Lateral scalability limits of silicon conduction channels, J APPL PHYS, 86(7), 1999, pp. 3911-3916

Simulation of a quantum-dot flash memory

Authors: Iannaccone, G Trellakis, A Ravaioli, U

Citation: G. Iannaccone et al., Simulation of a quantum-dot flash memory, J APPL PHYS, 84(9), 1998, pp. 5032-5036

Risultati: 1-14 |