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Results: 1-25 | 26-38 |
Results: 26-38/38
Pulse autocorrelation measurements based on two- and three-photon conductivity in a GaN photodiode
Authors: Streltsov, AM Moll, KD Gaeta, AL Kung, P Walker, D Razeghi, M
Citation: Am. Streltsov et al., Pulse autocorrelation measurements based on two- and three-photon conductivity in a GaN photodiode, APPL PHYS L, 75(24), 1999, pp. 3778-3780
High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 mu m
Authors: Wu, D Lane, B Mohseni, H Diaz, J Razeghi, M
Citation: D. Wu et al., High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 mu m, APPL PHYS L, 74(9), 1999, pp. 1194-1196
High-quality visible-blind AlGaN p-i-n photodiodes
Authors: Monroy, E Hamilton, M Walker, D Kung, P Sanchez, FJ Razeghi, M
Citation: E. Monroy et al., High-quality visible-blind AlGaN p-i-n photodiodes, APPL PHYS L, 74(8), 1999, pp. 1171-1173
High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectorsbased on GaN
Authors: Walker, D Monroy, E Kung, P Wu, J Hamilton, M Sanchez, FJ Diaz, J Razeghi, M
Citation: D. Walker et al., High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectorsbased on GaN, APPL PHYS L, 74(5), 1999, pp. 762-764
Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates
Authors: Kung, P Walker, D Hamilton, N Diaz, J Razeghi, M
Citation: P. Kung et al., Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates, APPL PHYS L, 74(4), 1999, pp. 570-572
InAsSb InAsP strained-layer superlattice injection lasers operating at 4.0mu m grown by metal-organic chemical vapor deposition
Authors: Lane, B Wu, Z Stein, A Diaz, J Razeghi, M
Citation: B. Lane et al., InAsSb InAsP strained-layer superlattice injection lasers operating at 4.0mu m grown by metal-organic chemical vapor deposition, APPL PHYS L, 74(23), 1999, pp. 3438-3440
High-temperature continuous-wave operation of lambda similar to 8 mu m quantum cascade lasers
Authors: Slivken, S Matlis, A Jelen, C Rybaltowski, A Diaz, J Razeghi, M
Citation: S. Slivken et al., High-temperature continuous-wave operation of lambda similar to 8 mu m quantum cascade lasers, APPL PHYS L, 74(2), 1999, pp. 173-175
Low-threshold 7.3 mu m quantum cascade lasers grown by gas-source molecular beam epitaxy
Authors: Slivken, S Matlis, A Rybaltowski, A Wu, Z Razeghi, M
Citation: S. Slivken et al., Low-threshold 7.3 mu m quantum cascade lasers grown by gas-source molecular beam epitaxy, APPL PHYS L, 74(19), 1999, pp. 2758-2760
Aluminum gallium nitride short-period superlattices doped with magnesium
Authors: Saxler, A Mitchel, WC Kung, P Razeghi, M
Citation: A. Saxler et al., Aluminum gallium nitride short-period superlattices doped with magnesium, APPL PHYS L, 74(14), 1999, pp. 2023-2025
Band-gap narrowing and potential fluctuation in Si-doped GaN
Authors: Lee, IH Lee, JJ Kung, P Sanchez, FJ Razeghi, M
Citation: Ih. Lee et al., Band-gap narrowing and potential fluctuation in Si-doped GaN, APPL PHYS L, 74(1), 1999, pp. 102-104
Room temperature operation of 8-12 mu m InSbBi infrared photodetectors on GaAs substrates
Authors: Lee, JJ Kim, JD Razeghi, M
Citation: Jj. Lee et al., Room temperature operation of 8-12 mu m InSbBi infrared photodetectors on GaAs substrates, APPL PHYS L, 73(5), 1999, pp. 602-604
Quantum dots optoelectronic devices
Authors: Kim, S Razeghi, M
Citation: S. Kim et M. Razeghi, Quantum dots optoelectronic devices, RRD APP PHY, 2, 1999, pp. 717-741
Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices
Authors: Mohseni, H Litvinov, VI Razeghi, M
Citation: H. Mohseni et al., Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices, PHYS REV B, 58(23), 1998, pp. 15378-15380
Risultati: 1-25 | 26-38 |