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Results:
1-15
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Results: 15
Authors:
Rebohle, L
von Borany, J
Borchert, D
Frob, H
Gebel, T
Helm, M
Moller, W
Skorupa, W
Citation: L. Rebohle et al., Efficient blue light emission from silicon - The first integrated Si-basedoptocoupler, EL SOLID ST, 4(7), 2001, pp. G57-G60
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Misiuk, A
Yankov, RA
Rebohle, L
Skorupa, W
Citation: Ie. Tyschenko et al., Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure, SEMICONDUCT, 35(2), 2001, pp. 125-131
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Misiuk, A
Rebohle, L
Skorupa, W
Yankov, RA
Popov, VP
Citation: Ie. Tyschenko et al., Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing, OPT MATER, 17(1-2), 2001, pp. 99-102
Authors:
Kachurin, GA
Rebohle, L
Tyschenko, IE
Volodin, VA
Voelskow, M
Skorupa, W
Froeb, H
Citation: Ga. Kachurin et al., Formation of photoluminescence centers during annealing of SiO2 layers implanted with Ge ions, SEMICONDUCT, 34(1), 2000, pp. 21-26
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Rebohle, L
Misiuk, A
Yankov, RA
Skorupa, W
Citation: Ie. Tyschenko et al., Visible photoluminescence from germanium-implanted silicon oxynitride films after annealing under hydrostatic pressure, DEFECT DIFF, 186-1, 2000, pp. 71-77
Authors:
Rebohle, L
von Borany, J
Frob, H
Skorupa, W
Citation: L. Rebohle et al., Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements, APP PHYS B, 71(2), 2000, pp. 131-151
Authors:
Misiuk, A
Iller, A
Rebohle, L
Lukaszewicz, M
Kudla, A
Citation: A. Misiuk et al., Photoluminescence from pressure-annealed silicon dioxide and nitride films, MICROEL REL, 40(4-5), 2000, pp. 881-884
Authors:
Rebohle, L
von Borany, J
Skorupa, W
Frob, H
Niedermeier, S
Citation: L. Rebohle et al., Strong photoluminescence of Sn-implanted thermally grown SiO2 layers, APPL PHYS L, 77(7), 2000, pp. 969-971
Authors:
Tyschenko, IE
Volodin, VA
Rebohle, L
Voelskov, M
Skorupa, V
Citation: Ie. Tyschenko et al., Photoluminescence of Si3N4 films implanted with Ge+ and Ar+ ions, SEMICONDUCT, 33(5), 1999, pp. 523-528
Authors:
Misiuk, A
Surma, B
Rebohle, L
Jun, J
Antonova, IV
Tyschenko, I
Romano-Rodriguez, A
Lopez, M
Citation: A. Misiuk et al., Luminescence properties of oxygen-containing silicon annealed at enhanced argon pressure, PHYS ST S-B, 211(1), 1999, pp. 233-238
Authors:
Markwitz, A
Grotzschel, R
Heinig, KH
Rebohle, L
Skorupa, W
Citation: A. Markwitz et al., Microstructural investigation of Sn nanoclusters in double-energy implanted and annealed SiO2 layers with cross-sectional TEM, NUCL INST B, 152(2-3), 1999, pp. 319-324
Authors:
Markowitz, A
Rebohle, L
Hofmeister, H
Skorupa, W
Citation: A. Markowitz et al., Homogeneously size distributed Ge nanoclusters embedded in SiO2 layers produced by ion beam synthesis, NUCL INST B, 147(1-4), 1999, pp. 361-366
Authors:
Rebohle, L
Revesz, AG
Skorupa, W
Hughes, HL
Citation: L. Rebohle et al., Photoluminescence spectra of SIMOX buried oxide layers prepared under various conditions, MICROEL ENG, 48(1-4), 1999, pp. 335-338
Authors:
Tyschenko, IE
Rebohle, L
Yankov, RA
Skorupa, W
Misiuk, A
Kachurin, GA
Citation: Ie. Tyschenko et al., The effect of annealing under hydrostatic pressure on the visible photoluminescence from Si+-ion implanted SiO2 films, J LUMINESC, 80(1-4), 1998, pp. 229-233
Authors:
Rebohle, L
von Borany, J
Skorupa, W
Tyschenko, IE
Frob, H
Citation: L. Rebohle et al., Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers, J LUMINESC, 80(1-4), 1998, pp. 275-279
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