Authors: Jacques, D Regolini, JL Barla, K

Citation: D. Jacques et al., Interface studies of silicon nitride dielectric layers, J NON-CRYST, 280(1-3), 2001, pp. 59-62

Authors: Ferrieu, F Ribot, P Regolini, JL

Citation: F. Ferrieu et al., Spectroscopic ellipsometry of SixGe1-x/Si: a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry, THIN SOL FI, 373(1-2), 2000, pp. 211-215

Authors: Jurczak, M Skotnicki, T Paoli, M Tormen, B Martins, J Regolini, JL Dutartre, D Ribot, P Lenoble, D Pantel, R Monfray, S

Citation: M. Jurczak et al., Silicon-on-nothing (SON) - an innovative process for advanced CMOS, IEEE DEVICE, 47(11), 2000, pp. 2179-2187

Authors: Ribot, P Jouan, S Regolini, JL

Citation: P. Ribot et al., Process stability of SiGe heterostructures for BiCMOS applications, J PHYS IV, 9(P8), 1999, pp. 327-332

Authors: Jouan, S Planche, R Baudry, H Ribot, P Chroboczek, JA Dutartre, D Gloria, D Laurens, M Llinares, P Marty, M Monroy, A Morin, C Pantel, R Perrotin, A de Pontcharra, J Regolini, JL Vincent, G Chantre, A

Citation: S. Jouan et al., A high-speed low 1/f noise SiGeHBT technology using epitaxially-aligned polysilicon emitters, IEEE DEVICE, 46(7), 1999, pp. 1525-1531