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Results: 1-17 |
Results: 17
Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation
Authors: Karecki, S Chatterjee, R Pruette, L Reif, R Vartanian, V Sparks, T Beu, L Novoselov, K
Citation: S. Karecki et al., Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation, J VAC SCI B, 19(4), 2001, pp. 1269-1292
Characterization of iodoheptafluoropropane as a dielectric etchant. II. Wafer surface analysis
Authors: Karecki, S Chatterjee, R Pruette, L Reif, R Vartanian, V Sparks, T Lee, JJ Beu, L Miller, C
Citation: S. Karecki et al., Characterization of iodoheptafluoropropane as a dielectric etchant. II. Wafer surface analysis, J VAC SCI B, 19(4), 2001, pp. 1293-1305
Characterization of iodoheptafluoropropane as a dielectric etchant. III. Effluent analysis
Authors: Karecki, S Chatterjee, R Pruette, L Reif, R Vartanian, V Sparks, T Beu, L
Citation: S. Karecki et al., Characterization of iodoheptafluoropropane as a dielectric etchant. III. Effluent analysis, J VAC SCI B, 19(4), 2001, pp. 1306-1318
Microstructure examination of copper wafer bonding
Authors: Chen, KN Fan, A Reif, R
Citation: Kn. Chen et al., Microstructure examination of copper wafer bonding, J ELEC MAT, 30(4), 2001, pp. 331-335
Interconnect limits on gigascale integration (GSI) in the 21st century
Authors: Davis, JA Venkatesan, R Kaloyeros, A Beylansky, M Souri, SJ Banerjee, K Saraswat, KC Rahman, A Reif, R Meindl, JD
Citation: Ja. Davis et al., Interconnect limits on gigascale integration (GSI) in the 21st century, P IEEE, 89(3), 2001, pp. 305-324
Evaluation of oxalyl fluoride for a dielectric etch application in an inductively coupled plasma etch tool
Authors: Karecki, S Chatterjee, R Pruette, L Reif, R Sparks, T Beu, L Vartanian, V Novoselov, M
Citation: S. Karecki et al., Evaluation of oxalyl fluoride for a dielectric etch application in an inductively coupled plasma etch tool, J ELCHEM SO, 148(3), 2001, pp. G141-G149
The evaluation of hexafluorobenzene as an environmentally benign dielectric etch chemistry
Authors: Chatterjee, R Karecki, S Reif, R Sparks, T Vartanian, V Goolsby, B
Citation: R. Chatterjee et al., The evaluation of hexafluorobenzene as an environmentally benign dielectric etch chemistry, J ELCHEM SO, 148(12), 2001, pp. G721-G724
Evaluation of pentafluoroethane and 1,1-diffuoroethane for a dielectric etch application in an inductively coupled plasma etch tool
Authors: Karecki, S Chatterjee, R Pruette, L Reif, R Sparks, T Beu, L Vartanian, V
Citation: S. Karecki et al., Evaluation of pentafluoroethane and 1,1-diffuoroethane for a dielectric etch application in an inductively coupled plasma etch tool, JPN J A P 1, 39(7B), 2000, pp. 4666-4686
System-level performance evaluation of three-dimensional integrated circuits
Authors: Rahman, A Reif, R
Citation: A. Rahman et R. Reif, System-level performance evaluation of three-dimensional integrated circuits, IEEE VLSI, 8(6), 2000, pp. 671-678
Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality
Authors: Naik, RS Lutsky, JJ Reif, R Sodini, CG Becker, A Fetter, L Huggins, H Miller, R Pastalan, J Rittenhouse, G Wong, YH
Citation: Rs. Naik et al., Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality, IEEE ULTRAS, 47(1), 2000, pp. 292-296
High density plasma oxide etching using nitrogen trifluoride and acetylene
Authors: Pruette, L Karecki, S Chatterjee, R Reif, R Sparks, T Vartanian, V
Citation: L. Pruette et al., High density plasma oxide etching using nitrogen trifluoride and acetylene, J VAC SCI A, 18(6), 2000, pp. 2749-2758
Evaluation of C4F8O as an alternative plasma-enhanced chemical vapor deposition chamber clean chemistry
Authors: Pruette, L Karecki, S Reif, R Tousignant, L Reagan, W Kesari, S Zazzera, L
Citation: L. Pruette et al., Evaluation of C4F8O as an alternative plasma-enhanced chemical vapor deposition chamber clean chemistry, J ELCHEM SO, 147(3), 2000, pp. 1149-1153
Evaluation of a dilute nitrogen trifluoride plasma clean in a dielectric PECVD reactor
Authors: Pruette, L Karecki, S Reif, R Entley, W Langan, J Hazari, V Hines, C
Citation: L. Pruette et al., Evaluation of a dilute nitrogen trifluoride plasma clean in a dielectric PECVD reactor, EL SOLID ST, 2(11), 1999, pp. 592-594
Copper wafer bonding
Authors: Fan, A Rahman, A Reif, R
Citation: A. Fan et al., Copper wafer bonding, EL SOLID ST, 2(10), 1999, pp. 534-536
Fourier transform infrared spectroscopy of effluents from pulsed plasmas of 1,1,2,2-tetrafluoroethane, hexafluoropropylene oxide, and difluoromethane
Authors: Labelle, CB Karecki, SM Reif, R Gleason, KK
Citation: Cb. Labelle et al., Fourier transform infrared spectroscopy of effluents from pulsed plasmas of 1,1,2,2-tetrafluoroethane, hexafluoropropylene oxide, and difluoromethane, J VAC SCI A, 17(6), 1999, pp. 3419-3428
The DIRC detector at BaBar
Authors: Adam, I Aleksan, R Aston, D Bailly, P Beigbeder, C Benayoun, M Benkebil, M Bonneaud, G Breton, D Briand, H Brown, D Bourgeois, P Chauveau, J Cizeron, R Cohen-Tanugi, J Convery, M Dardin, S David, P De Domenico, G de la Vaissiere, C de Lesquen, A Del Buono, L Doser, M Emery, S Fouque, G Gaidot, A Gastaldi, F Genat, JF Geld, T Gosset, L Hale, D de Monchenault, GH Hamon, O Hoecker, A Imbault, D Kadel, RW Kadyk, J Kalelkar, M Karolak, M Kawahara, H Krueger, H Le Diberder, F Lebbolo, H Leruste, PH London, G Long, M Lory, J Lu, A Lutz, AM Lynch, G Mancinelli, G McCulloch, M McShurley, D Malchow, R Matricon, P Mayer, B Meadows, B Micout, P Muller, D Narjoux, JL Noppe, JM Oshatz, D Oxoby, G Plano, R Plaszczynski, S Pripstein, M Rasson, J Ratcliff, B Reif, R Renard, C Roos, L Roussot, E Salnikov, A Sarazin, X Schune, MH Schwiening, J Sen, S Shelkov, V Sokoloff, M Staengle, H Spanier, S Stiles, P Stone, R Thiebaux, C Truong, K Toki, W Valassi, A Vasileiadis, G Vasseur, G Va'vra, J Verderi, M Versille, S Warner, D Weber, T Weber, TF Wenzel, W Wilson, R Wormser, G Yeche, C Yellin, S Zhang, B Zito, M
Citation: I. Adam et al., The DIRC detector at BaBar, NUCL INST A, 433(1-2), 1999, pp. 121-127
Low-temperature deposition of highly textured aluminum nitride by direct current magnetron sputtering for applications in thin-film resonators
Authors: Naik, RS Reif, R Lutsky, JJ Sodini, CG
Citation: Rs. Naik et al., Low-temperature deposition of highly textured aluminum nitride by direct current magnetron sputtering for applications in thin-film resonators, J ELCHEM SO, 146(2), 1999, pp. 691-696
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