Citation: Hq. Ni et al., Ab initio pseudopotential calculations of electronic structure of off-stoichiometric ZnO, JPN J A P 1, 40(6A), 2001, pp. 4103-4108
Citation: Zm. Ren et al., Influence of high frequency electromagnetic field on the initial solidification during electromagnetic continuous casting, ISIJ INT, 41(9), 2001, pp. 981-985
Citation: Zm. Ren et al., Formation of quasi-one-dimensional carbon chains in cubic nanocrystals by photon-breaking of C-S bonds in polythiophene, J MATER RES, 16(10), 2001, pp. 2793-2797
Authors:
Ni, HQ
Lu, YF
Liu, ZY
Qiu, H
Wang, WJ
Ren, ZM
Chow, SK
Jie, YX
Citation: Hq. Ni et al., Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy, APPL PHYS L, 79(6), 2001, pp. 812-814
Authors:
Ren, ZM
Lu, YF
Goh, YW
Chong, TC
Ng, ML
Wang, JP
Cheong, BA
Liew, YF
Citation: Zm. Ren et al., Deposition of AlN thin films with cubic crystal structures on silicon substrates at room temperature, JPN J A P 2, 39(5A), 2000, pp. L423-L425
Citation: Yf. Lu et al., Growth of crystalline ZnO thin films on silicon (100) and sapphire (0001) by pulsed laser deposition, J LASER APP, 12(2), 2000, pp. 54-58
Authors:
Ren, ZM
Lu, YF
Ni, HQ
Liew, TYF
Cheong, BA
Chow, SK
Ng, ML
Wang, JP
Citation: Zm. Ren et al., Room temperature synthesis of c-AlN thin films by nitrogen-ion-assisted pulsed laser deposition, J APPL PHYS, 88(12), 2000, pp. 7346-7350
Authors:
Ren, ZM
Lu, YF
Ho, DHK
Chong, TC
Cheong, BA
Pang, SI
Wang, JP
Li, K
Citation: Zm. Ren et al., Raman spectroscopy studies of the influence of substrate temperature and ion beam energy on CNx thin films deposited by nitrogen-ion-assisted pulsed laser deposition, JPN J A P 1, 38(8), 1999, pp. 4859-4862
Authors:
Lu, YF
Ren, ZM
Chong, TC
Cheong, BA
Pang, SI
Wang, JP
Li, K
Citation: Yf. Lu et al., Influence of ion-beam energy and substrate temperature on the synthesis ofcarbon nitride thin films by nitrogen-ion-assisted pulsed laser deposition, J APPL PHYS, 86(9), 1999, pp. 4954-4958
Citation: Yf. Lu et al., Simulation of material properties of amorphous carbon nitride with different nitrogen concentrations, J APPL PHYS, 86(10), 1999, pp. 5417-5421