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Results: 6

Authors: Sumpf, B Beister, G Erbert, G Fricke, J Knauer, A Pittroff, W Ressel, P Sebastian, J Wenzel, H Trankle, G
Citation: B. Sumpf et al., Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1,2-W continuous-wave operation at 735 nm, IEEE PHOTON, 13(1), 2001, pp. 7-9

Authors: Malina, V Vogel, K Ressel, P Pecz, B Dobos, L
Citation: V. Malina et al., Related electrical and metallurgical properties of Pd/Zn/Pd/Ge and Pd/Zn/Pd/Au contact systems to p-InGaP, PHYS ST S-A, 184(1), 2001, pp. 139-144

Authors: Sumpf, B Beister, G Erbert, G Fricke, J Knauer, A Pittroff, W Ressel, P Sebastian, J Wenzel, H Trankle, G
Citation: B. Sumpf et al., 2W reliable operation of lambda=735nm GaAsP/AlGaAs laser diodes, ELECTR LETT, 37(6), 2001, pp. 351-353

Authors: Hirth, U Ressel, P
Citation: U. Hirth et P. Ressel, Exchangeable random orders and almost uniform distributions, J THEOR PR, 13(3), 2000, pp. 609-634

Authors: Ressel, P Hao, PH Park, MH Yang, ZC Wang, LC Osterle, W Kurpas, P Richter, E Kuphal, E Hartnagel, HL
Citation: P. Ressel et al., Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties, J ELEC MAT, 29(7), 2000, pp. 964-972

Authors: Beister, G Erbert, G Knauer, A Maege, J Ressel, P Sebastian, J Staske, R Wenzel, H
Citation: G. Beister et al., High-power and high temperature long-term stability of Al-free 950nm laserstructures on GaAs, ELECTR LETT, 35(19), 1999, pp. 1641-1643
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