Authors:
Sumpf, B
Beister, G
Erbert, G
Fricke, J
Knauer, A
Pittroff, W
Ressel, P
Sebastian, J
Wenzel, H
Trankle, G
Citation: B. Sumpf et al., Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1,2-W continuous-wave operation at 735 nm, IEEE PHOTON, 13(1), 2001, pp. 7-9
Authors:
Malina, V
Vogel, K
Ressel, P
Pecz, B
Dobos, L
Citation: V. Malina et al., Related electrical and metallurgical properties of Pd/Zn/Pd/Ge and Pd/Zn/Pd/Au contact systems to p-InGaP, PHYS ST S-A, 184(1), 2001, pp. 139-144
Authors:
Ressel, P
Hao, PH
Park, MH
Yang, ZC
Wang, LC
Osterle, W
Kurpas, P
Richter, E
Kuphal, E
Hartnagel, HL
Citation: P. Ressel et al., Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties, J ELEC MAT, 29(7), 2000, pp. 964-972
Authors:
Beister, G
Erbert, G
Knauer, A
Maege, J
Ressel, P
Sebastian, J
Staske, R
Wenzel, H
Citation: G. Beister et al., High-power and high temperature long-term stability of Al-free 950nm laserstructures on GaAs, ELECTR LETT, 35(19), 1999, pp. 1641-1643