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Results: 1-9 |

Results: 9

Growth of in situ CoSi2 layer by metalorganic chemical vapor deposition onSi tips and its field-emission properties

Authors: Han, BW Rhee, HS Ahn, BT

Citation: Bw. Han et al., Growth of in situ CoSi2 layer by metalorganic chemical vapor deposition onSi tips and its field-emission properties, J VAC SCI B, 19(2), 2001, pp. 533-536

Human chorionic gonadotropin induces nitric oxide synthesis by murine microglia

Authors: Kim, HM Rim, HK Shin, T Kim, JJ Park, ST Oh, JM Choi, MK Chung, YT Rhee, HS Jeung, JY Lee, KN Kim, NS Kim, CH

Citation: Hm. Kim et al., Human chorionic gonadotropin induces nitric oxide synthesis by murine microglia, INT J IMMUN, 22(6), 2000, pp. 453-461

Hydrogen plasma pretreatment effect on the deposition of aluminum thin films from metalorganic chemical vapor deposition using dimethylethylamine alane

Authors: Jang, TW Rhee, HS Ahn, BT

Citation: Tw. Jang et al., Hydrogen plasma pretreatment effect on the deposition of aluminum thin films from metalorganic chemical vapor deposition using dimethylethylamine alane, J VAC SCI A, 17(3), 1999, pp. 1031-1035

Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt-carbon films on (100) Si substrate

Authors: Rhee, HS Ahn, BT Sohn, DK

Citation: Hs. Rhee et al., Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt-carbon films on (100) Si substrate, J APPL PHYS, 86(6), 1999, pp. 3452-3459

Cobalt metallorganic chemical vapor deposition and formation of epitaxial CoSi2 layer on Si(100) substrate

Authors: Rhee, HS Ahn, BT

Citation: Hs. Rhee et Bt. Ahn, Cobalt metallorganic chemical vapor deposition and formation of epitaxial CoSi2 layer on Si(100) substrate, J ELCHEM SO, 146(7), 1999, pp. 2720-2724

Epitaxial growth of a (100) CoSi2 layer from carbonic cobalt films deposited on (100) Si substrate using an organometallic source

Authors: Rhee, HS Jang, TW Ahn, BT

Citation: Hs. Rhee et al., Epitaxial growth of a (100) CoSi2 layer from carbonic cobalt films deposited on (100) Si substrate using an organometallic source, APPL PHYS L, 74(7), 1999, pp. 1003-1005

In situ growth of an epitaxial CoSi2 layer on a Si(100) substrate by reactive chemical-vapor deposition using a cobalt metallorganic source

Authors: Rhee, HS Ahn, BT

Citation: Hs. Rhee et Bt. Ahn, In situ growth of an epitaxial CoSi2 layer on a Si(100) substrate by reactive chemical-vapor deposition using a cobalt metallorganic source, APPL PHYS L, 74(21), 1999, pp. 3176-3178

Formation of TiSi2 thin films from chemical vapor deposition using TiI4

Authors: Rhee, HS Jang, TW Ahn, BT Baek, JT

Citation: Hs. Rhee et al., Formation of TiSi2 thin films from chemical vapor deposition using TiI4, J KOR PHYS, 33, 1998, pp. S121-S124

Hydrogen plasma effect on aluminum thin films deposition from CVD using dimethylethylamine Alane

Authors: Jang, TW Rhee, HS Ahn, BT

Citation: Tw. Jang et al., Hydrogen plasma effect on aluminum thin films deposition from CVD using dimethylethylamine Alane, J KOR PHYS, 33, 1998, pp. S125-S128

Risultati: 1-9 |