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Results: 26-32/32
Authors:
Maffeis, TGG
Clark, SA
Dunstan, PR
Wilks, SP
Evans, DA
Peiro, F
Riechert, H
Parbrook, PJ
Citation: Tgg. Maffeis et al., GaN cleaning by Ga deposition, reduction and re-evaporation: An SXPS study, PHYS ST S-A, 176(1), 1999, pp. 751-754
Authors:
Schuster, M
Gervais, PO
Jobst, B
Hosler, W
Averbeck, R
Riechert, H
Iberl, A
Stommer, R
Citation: M. Schuster et al., Determination of the chemical composition of distorted InGaN GaN heterostructures from x-ray diffraction data, J PHYS D, 32(10A), 1999, pp. A56-A60
Authors:
Lessmann, A
Schuster, M
Riechert, H
Brennan, S
Munkholm, A
Materlik, G
Citation: A. Lessmann et al., Fluorescence x-ray standing wave study on (AlAs)(GaAs) superlattices, J PHYS D, 32(10A), 1999, pp. A65-A70
Authors:
Borchert, B
Egorov, AY
Illek, S
Komainda, M
Riechert, H
Citation: B. Borchert et al., 1.29 mu m GalnNAs multiple quantum-well ridge-waveguide laser diodes with improved performance, ELECTR LETT, 35(25), 1999, pp. 2204-2206
Authors:
Egorov, AY
Bernklau, D
Livshits, D
Ustinov, V
Alferov, ZI
Riechert, H
Citation: Ay. Egorov et al., High power CW operation of InGaAsN lasers at 1.3 mu m, ELECTR LETT, 35(19), 1999, pp. 1643-1644
Authors:
Rotter, M
Wixforth, A
Govorov, AO
Ruile, W
Bernklau, D
Riechert, H
Citation: M. Rotter et al., Nonlinear acoustoelectric interactions in GaAs/LiNbO3 structures, APPL PHYS L, 75(7), 1999, pp. 965-967
Authors:
Jiang, DS
Ramsteiner, M
Ploog, K
Tews, H
Graber, A
Riechert, H
Citation: Ds. Jiang et al., Raman scattering and photoluminescence properties of MBE-grown GaN on sapphire, RADIAT EFF, 146(1-4), 1998, pp. 99-111