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Results:
1-7
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Results: 7
Authors:
Penarier, A
Pascal, F
G-Jarrix, S
Delseny, C
Riet, M
Blayac, S
Citation: A. Penarier et al., Low frequency noise of InP/InGaAs heterojunction bipolar transistors, JPN J A P 1, 40(2A), 2001, pp. 525-529
Authors:
Maneux, C
Labat, N
Malbert, N
Touboul, A
Danto, Y
Dumas, JM
Riet, M
Benchimol, JL
Citation: C. Maneux et al., Experimental procedure for the evaluation of GaAs-based HBT's reliability, MICROELEC J, 32(4), 2001, pp. 357-371
Authors:
Andre, P
Blayac, S
Berdaguer, P
Benchimol, JL
Godin, J
Kauffmann, N
Konczykowska, A
Kasbari, AE
Riet, M
Citation: P. Andre et al., InGaAs/InP DHBT technology and design methodology for over 40 Gb/s opticalcommunication circuits, IEEE J SOLI, 36(9), 2001, pp. 1321-1327
Authors:
Kauffmann, N
Blayac, S
Abboun, M
Andre, P
Aniel, F
Riet, M
Benchimol, JL
Godin, J
Konczykowska, A
Citation: N. Kauffmann et al., InPHBT driver circuit optimization for high-speed ETDM transmission, IEEE J SOLI, 36(4), 2001, pp. 639-647
Authors:
Benchimol, JL
Mba, J
Sermage, B
Riet, M
Blayac, S
Berdaguer, P
Duchenois, AM
Andre, P
Thuret, J
Gonzalez, C
Konczykowska, A
Citation: Jl. Benchimol et al., Investigation of carbon-doped base materials grown by CBE for Al-free InPHBTs, J CRYST GR, 209(2-3), 2000, pp. 476-480
Authors:
Danelon, V
Aniel, F
Benchimol, JL
Mba, J
Riet, M
Crozat, P
Vernet, G
Adde, R
Citation: V. Danelon et al., Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors, IEEE MICR G, 9(5), 1999, pp. 195-197
Authors:
Etrillard, J
Bresse, JF
Daguet, C
Riet, M
Mba, J
Citation: J. Etrillard et al., Low damage dry etching of III-V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma, J VAC SCI A, 17(4), 1999, pp. 1174-1181
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1-7
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