Authors: Sidek, RM Straube, UN Waite, AM Evans, AGR Parry, C Phillips, P Whall, TE Parker, EHC Riley, LS Hall, S

Citation: Rm. Sidek et al., SiGe CMOS fabrication using SiGe MBE and anodic/LTO gate oxide (vol 15, pg135, 2000), SEMIC SCI T, 15(4), 2000, pp. 423-423

Authors: Riley, LS Hall, S Schitz, J

Citation: Ls. Riley et al., Evaluation of surface generation velocity of sidewall oxide interfaces formed by dry etching for shallow trench isolation, SOL ST ELEC, 44(11), 2000, pp. 2093-2095

Authors: Riley, LS Hall, S Harris, J Fernandez, J Gallas, B Evans, AGR Clarke, JF Humphrey, J Murray, RT Jeynes, C

Citation: Ls. Riley et al., SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation, MICROEL ENG, 48(1-4), 1999, pp. 227-230

Authors: Riley, LS Hall, S Bonar, JM

Citation: Ls. Riley et al., The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si :Si0.9Ge0.1 : Si substrates, SOL ST ELEC, 43(12), 1999, pp. 2247-2250

Authors: Riley, LS Hall, S

Citation: Ls. Riley et S. Hall, X-ray photoelectron spectra of low temperature plasma anodized Si0.84Ge0.16 alloy on Si(100): Implications for SiGe oxidation kinetics and oxide electrical properties, J APPL PHYS, 85(9), 1999, pp. 6828-6837