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Results:
1-8
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Results: 8
Authors:
Jang, YC
Shin, DO
Kim, KS
Shim, KH
Lee, NE
Youn, SP
Roh, KJ
Roh, YH
Citation: Yc. Jang et al., Structural and electrical characteristics of chemical vapor deposited W/n-Si0.83Ge0.17/Si(001) and chemical vapor deposited WSix/n-Si0.83Ge0.17/Si(001), J VAC SCI A, 19(4), 2001, pp. 1046-1051
Authors:
Kim, KS
Jang, YC
Kim, KJ
Lee, NE
Youn, SP
Roh, KJ
Roh, YH
Citation: Ks. Kim et al., Interface formation and electrical properties of a TiNx/SiO2/Si structure for application in gate electrodes, J VAC SCI A, 19(4), 2001, pp. 1164-1169
Authors:
Jang, YC
Kim, KS
Shin, DO
Kim, HJ
Shim, KH
Lee, NE
Youn, SP
Roh, KJ
Roh, YH
Citation: Yc. Jang et al., Study of electrical and interfacial properties of CVD-W/p-Si0.83Ge0.17/Si(001), THIN SOL FI, 377, 2000, pp. 640-645
Authors:
Kim, LJ
Kim, JM
Jung, DG
Park, CY
Yang, CW
Roh, YH
Citation: Lj. Kim et al., Effects of deposition parameters on the crystallinity of CeO2 thin films deposited on Si(100) substrates by r.f-magnetron sputtering, THIN SOL FI, 360(1-2), 2000, pp. 154-158
Authors:
Roh, YH
Bae, JW
Nam, GS
Kim, JH
Kim, SH
Yoon, CM
Citation: Yh. Roh et al., Palladium-catalyzed coupling reaction of iodouracil having acetamidine moiety with olefins, SYN COMMUN, 30(1), 2000, pp. 81-86
Authors:
Roh, YH
Oh, JH
Citation: Yh. Roh et Jh. Oh, Sliding mode control with uncertainty adaptation for uncertain input-delaysystems, INT J CONTR, 73(13), 2000, pp. 1255-1260
Authors:
Roh, YH
Kim, JH
Kim, SH
Yoo, BW
Yoon, CM
Citation: Yh. Roh et al., SmI2 mediated reaction of N-(haloalkyl)-N-phenylformamide: Homologation, B KOR CHEM, 20(9), 1999, pp. 985-986
Authors:
Roh, YH
Oh, JH
Citation: Yh. Roh et Jh. Oh, Robust stabilization of uncertain input-delay systems by sliding mode control with delay compensation, AUTOMATICA, 35(11), 1999, pp. 1861-1865
Risultati:
1-8
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