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Results:
1-22
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Results: 22
Authors:
Ronning, C
Carlson, EP
Davis, RF
Citation: C. Ronning et al., Ion implantation into gallium nitride, PHYS REPORT, 351(5), 2001, pp. 349-385
Authors:
Neumaier, P
Dollinger, G
Bergmaier, A
Genchev, I
Gorgens, L
Fischer, R
Ronning, C
Hofsass, H
Citation: P. Neumaier et al., High-resolution elastic recoil detection utilizing Bayesian probability theory, NUCL INST B, 183(1-2), 2001, pp. 48-61
Authors:
Bharuth-Ram, K
Burchard, A
Deicher, M
Quintel, H
Restle, M
Hofsass, H
Ronning, C
Citation: K. Bharuth-ram et al., Implantation sites of In, Cd, and Hf ions in diamond - art. no. 195207, PHYS REV B, 6419(19), 2001, pp. 5207
Authors:
Davis, RF
Gehrke, T
Linthicum, KJ
Preble, E
Rajagopal, P
Ronning, C
Zorman, C
Mehregany, M
Citation: Rf. Davis et al., Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates, J CRYST GR, 231(3), 2001, pp. 335-341
Authors:
Ronning, C
Buttner, M
Vetter, U
Feldermann, H
Wondratschek, O
Hofsass, H
Brunner, W
Au, FCK
Li, Q
Lee, ST
Citation: C. Ronning et al., Ion beam deposition of fluorinated amorphous carbon, J APPL PHYS, 90(8), 2001, pp. 4237-4245
Authors:
Feldermann, H
Ronning, C
Hofsass, H
Huang, YL
Seibt, M
Citation: H. Feldermann et al., Cubic boron nitride thin film heteroepitaxy, J APPL PHYS, 90(7), 2001, pp. 3248-3254
Authors:
Ronning, C
Wondratschek, O
Buttner, M
Hofsass, H
Zimmermann, J
Leiderer, P
Boneberg, J
Citation: C. Ronning et al., Superhard, conductive coatings for atomic force microscopy cantilevers, APPL PHYS L, 79(19), 2001, pp. 3053-3055
Authors:
Ronning, C
Hofsass, H
Stotzler, A
Deicher, M
Carlson, EP
Hartlieb, PJ
Gehrke, T
Rajagopal, P
Davis, RF
Citation: C. Ronning et al., Photoluminescence characterization of Mg implanted GaN, MRS I J N S, 5, 2000, pp. NIL_622-NIL_628
Authors:
Ronning, C
Feldermann, H
Hofsass, H
Citation: C. Ronning et al., Growth, doping and applications of cubic boron nitride thin films, DIAM RELAT, 9(9-10), 2000, pp. 1767-1773
Authors:
Gehrke, T
Linthicum, KJ
Preble, E
Rajagopal, P
Ronning, C
Zorman, C
Mehregany, M
Davis, RF
Citation: T. Gehrke et al., Pendeo-epitaxial growth of gallium nitride on silicon substrates, J ELEC MAT, 29(3), 2000, pp. 306-310
Authors:
Habenicht, S
Lieb, KP
Bolse, W
Geyer, U
Roccaforte, F
Ronning, C
Citation: S. Habenicht et al., Ion beam erosion of graphite surfaces studied by STM: Ripples, self-affineroughening and near-surface damage accumulation, NUCL INST B, 161, 2000, pp. 958-962
Authors:
Reinke, P
Oelhafen, P
Feldermann, H
Ronning, C
Hofsass, H
Citation: P. Reinke et al., Hydrogen-plasma etching of ion beam deposited c-BN films: An in situ investigation of the surface with electron spectroscopy, J APPL PHYS, 88(10), 2000, pp. 5597-5604
Authors:
Ronning, C
Dalmer, M
Uhrmacher, M
Restle, M
Vetter, U
Ziegeler, L
Hofsass, H
Gehrke, T
Jarrendahl, K
Davis, RF
Citation: C. Ronning et al., Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery, J APPL PHYS, 87(5), 2000, pp. 2149-2157
Authors:
Waiblinger, R
Sommerhalter, C
Pietzak, B
Krauser, J
Mertesacker, B
Lux-Steiner, MC
Klaumunzer, S
Weidinger, A
Ronning, C
Hofsass, H
Citation: R. Waiblinger et al., Electrically conducting ion tracks in diamond-like carbon films for field emission, APPL PHYS A, 69(2), 1999, pp. 239-240
Authors:
Ronning, C
Hofsass, H
Citation: C. Ronning et H. Hofsass, Ion implantation and annealing of diamond studied by emission channeling and cathodoluminescence, DIAM RELAT, 8(8-9), 1999, pp. 1623-1630
Authors:
Bharuth-Ram, K
Restle, M
Hofsass, H
Ronning, C
Wahl, U
Citation: K. Bharuth-ram et al., Lattice site and diffusion of ion-implanted Li in as-grown and Se-rich ZnSe, PHYSICA B, 274, 1999, pp. 875-878
Authors:
King, SW
Davis, RF
Ronning, C
Nemanich, RJ
Citation: Sw. King et al., Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface, J ELEC MAT, 28(12), 1999, pp. L34-L37
Authors:
Dalmer, M
Vetter, U
Restle, M
Stotzler, A
Hofsass, H
Ronning, C
Moodley, MK
Bharuth-Ram, K
Citation: M. Dalmer et al., Combination of emission channeling, photoluminescence and Mossbauer spectroscopy to identify rare earth defect complexes in semiconductors, HYPER INTER, 121(1-8), 1999, pp. 347-352
Authors:
King, SW
Davis, RF
Ronning, C
Benjamin, MC
Nemanich, RJ
Citation: Sw. King et al., Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces, J APPL PHYS, 86(8), 1999, pp. 4483-4490
Authors:
Feldermann, H
Merk, R
Hofsass, H
Ronning, C
Zheleva, T
Citation: H. Feldermann et al., Room temperature growth of cubic boron nitride, APPL PHYS L, 74(11), 1999, pp. 1552-1554
Authors:
Ronning, C
Banks, AD
McCarson, BL
Schlesser, R
Sitar, Z
Davis, RF
Ward, BL
Nemanich, RJ
Citation: C. Ronning et al., Structural and electronic properties of boron nitride thin films containing silicon, J APPL PHYS, 84(9), 1998, pp. 5046-5051
Authors:
King, SW
Barnak, JP
Bremser, MD
Tracy, KM
Ronning, C
Davis, RF
Nemanich, RJ
Citation: Sw. King et al., Cleaning of AlN and GaN surfaces, J APPL PHYS, 84(9), 1998, pp. 5248-5260
Risultati:
1-22
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