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Results:
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Results: 8
Authors:
Winkelmeier, S
Sarstedt, M
Ereken, M
Goethals, M
Ronse, K
Citation: S. Winkelmeier et al., Metrology method for the correlation of line edge roughness for different resists before and after etch, MICROEL ENG, 57-8, 2001, pp. 665-672
Authors:
Maenhoudt, M
Pollentier, I
Wiaux, V
Vangoidsenhoven, D
Ronse, K
Citation: M. Maenhoudt et al., 248nm and 193nm lithography for damascene patterning, SOL ST TECH, 44(4), 2001, pp. S15
Authors:
Ercken, M
Moelants, M
Vandenberghe, G
Goethals, M
Ronse, K
Masuda, S
Spiess, W
Pawlowski, G
Citation: M. Ercken et al., Optimization of an advanced positive tone DUV photoresist towards 150 nm and beyond, MICROEL ENG, 53(1-4), 2000, pp. 443-447
Authors:
Van den hove, L
Van Rossum, M
Ronse, K
Citation: L. Van Den Hove et al., Proceedings of the International Conference on Micro- and Nanofabrication - September 22-24, 1998 - Leuven, Belgium - Preface, MICROEL ENG, 46(1-4), 1999, pp. 1-1
Authors:
Zhang, F
de Beeck, MO
Schaekers, M
Ronse, K
Conley, W
Gopalan, P
Gangala, H
Dusa, M
Bendik, J
Citation: F. Zhang et al., CD control using SiONBARL processing for sub-0.25 mu m lithography, MICROEL ENG, 46(1-4), 1999, pp. 51-54
Resist surface investigations for reduction of line-edge-roughness in top surface imaging technology
Authors:
Sugihara, T
Van Roey, F
Goethals, AM
Ronse, K
Van den hove, L
Citation: T. Sugihara et al., Resist surface investigations for reduction of line-edge-roughness in top surface imaging technology, MICROEL ENG, 46(1-4), 1999, pp. 339-343
Authors:
Ercken, M
Moelants, M
Pollers, I
van Puyenbroeck, I
Goethals, M
Ronse, K
Pawlowski, G
Spiess, W
Citation: M. Ercken et al., Optimization of an advanced positive DUV resist for 248 nm L S pattern printing, MICROEL ENG, 46(1-4), 1999, pp. 353-357
Authors:
Tritchkov, A
Stirniman, J
Gangala, H
Ronse, K
Citation: A. Tritchkov et al., 0.18 mu m KrF lithography using optical proximity correction based on empirical behavior modeling, J VAC SCI B, 16(6), 1998, pp. 3398-3404
Risultati:
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