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Results: 1-10 |
Results: 10
Simulation of surface morphology and defects in heteroepitaxied thin films
Authors: Sahlaoui, M Ayadi, A Fazouan, N Addou, M Rouhani, MD Esteve, D
Citation: M. Sahlaoui et al., Simulation of surface morphology and defects in heteroepitaxied thin films, EPJ-APPL PH, 13(3), 2001, pp. 171-176
Water-saturated Si(100)-(2x1): Kinetic Monte Carlo simulations of thermal oxygen incorporation
Authors: Esteve, A Chabal, YJ Raghavachari, K Weldon, MK Queeney, KT Rouhani, MD
Citation: A. Esteve et al., Water-saturated Si(100)-(2x1): Kinetic Monte Carlo simulations of thermal oxygen incorporation, J APPL PHYS, 90(12), 2001, pp. 6000-6005
Modeling of the silicon (100) thermal oxidation: from quantum to macroscopic formulation
Authors: Esteve, A Rouhani, MD Faurous, P Esteve, D
Citation: A. Esteve et al., Modeling of the silicon (100) thermal oxidation: from quantum to macroscopic formulation, MAT SC S PR, 3(1-2), 2000, pp. 47-57
Prediction of the performance of a Si-micromachined microthruster by computing the subsonic gas flow inside the thruster
Authors: Rossi, C Rouhani, MD Esteve, D
Citation: C. Rossi et al., Prediction of the performance of a Si-micromachined microthruster by computing the subsonic gas flow inside the thruster, SENS ACTU-A, 87(1-2), 2000, pp. 96-104
Ge clusters in Si matrix: structure and dynamics
Authors: Dalla Torre, J Barriquand, N Rouhani, MD Landa, G
Citation: J. Dalla Torre et al., Ge clusters in Si matrix: structure and dynamics, EUR PHY J B, 12(3), 1999, pp. 343-346
Strained semiconductors structures: simulation of the thin films heteroepitaxial growth
Authors: Sahlaoui, M Rouhani, MD Esteve, D Ayadi, A
Citation: M. Sahlaoui et al., Strained semiconductors structures: simulation of the thin films heteroepitaxial growth, APPL SURF S, 151(3-4), 1999, pp. 218-224
First principle study of hydrogen passivated Si(100) initial state of oxidation
Authors: Esteve, A Rouhani, MD Esteve, D
Citation: A. Esteve et al., First principle study of hydrogen passivated Si(100) initial state of oxidation, THIN SOL FI, 344, 1999, pp. 350-353
Modelling methodology of silicon oxidation from quantum calculations to Monte Carlo level
Authors: Esteve, A Rouhani, MD Esteve, D
Citation: A. Esteve et al., Modelling methodology of silicon oxidation from quantum calculations to Monte Carlo level, MICROEL REL, 39(2), 1999, pp. 275-278
(100) Silicon oxidation: first principle investigation of basic mechanisms
Authors: Esteve, A Rouhani, MD Esteve, D
Citation: A. Esteve et al., (100) Silicon oxidation: first principle investigation of basic mechanisms, J NON-CRYST, 245, 1999, pp. 150-153
Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation
Authors: Dalla Torre, J Rouhani, MD Landa, G Rocher, AM Malek, R Esteve, D
Citation: J. Dalla Torre et al., Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation, THIN SOL FI, 336(1-2), 1998, pp. 277-280
Risultati: 1-10 |